| GaN power ICs: Reviewing strengths, gaps, and future directions O Trescases, SK Murray, WL Jiang, MS Zaman 2020 IEEE international electron devices meeting (IEDM), 27.4. 1-27.4. 4, 2020 | 27 | 2020 |
| Monolithic integration of a 5-MHz GaN half-bridge in a 200-V GaN-on-SOI process: Programmable dv/dt control and floating high-voltage level-shifter WL Jiang, SK Murray, MS Zaman, H De Vleeschouwer, J Roig, P Moens, ... 2021 IEEE applied power electronics conference and exposition (APEC), 728-734, 2021 | 23 | 2021 |
| Integrated SenseHEMT and gate-driver on a 650-V GaN-on-Si platform demonstrated in a bridgeless totem-pole PFC converter MS Zaman, WL Jiang, S Murray, H De Vleeschouwer, P Moens, J Roig, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 15 | 2020 |
| An integrated GaN overcurrent protection circuit for power HEMTs using SenseHEMT WL Jiang, SK Murray, MS Zaman, H De Vleeschouwer, P Moens, J Roig, ... IEEE Transactions on Power Electronics 37 (8), 9314-9324, 2022 | 12 | 2022 |
| On-chip dynamic gate-voltage waveform sampling in a 200-V GaN-on-SOI power IC SK Murray, WL Jiang, MS Zaman, H De Vleeschouwer, P Moens, J Roig, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (6 …, 2022 | 9 | 2022 |
| Thermal management within multi-disciplinary system design of a rubik’s-cube-sized 2kw power inverter D Guirguis, M Nasr, SK Murray, H Matsumoto, O Trescases, CH Amon 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2018 | 9 | 2018 |
| GaN PMIC opportunities: Characterization of analog and digital building blocks in a 650V GaN-on-Si platform WL Jiang, MS Zaman, SK Murray, H De Vleeschouwer, J Roig, P Moens, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 8 | 2020 |
| Masterless interleaving scheme for parallel-connected inverters operating with variable frequency hysteretic current-mode control SK Murray, M Nasr, M Ashourloo, O Trescases 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 277-283, 2019 | 7 | 2019 |
| Transient overvoltage detection technique for GaN HEMTs integrated in a 200-V GaN-on-SOI process SK Murray, WL Jiang, MS Zaman, H De Vleeschouwer, P Moens, J Roig, ... 2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 1400-1405, 2022 | 6 | 2022 |
| A GaN DC-DC Converter with In-Situ Detection of Aging-Induced Coss Changes for Device State-of-Health Determination SK Murray, T Sigmund, O Trescases 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2503-2509, 2023 | 1 | 2023 |
| A 400 V Dual-Phase Series-Capacitor Buck Converter GaN IC with Integrated Closed-Loop Control SK Murray, A Kachura, O Trescases IEEE Transactions on Power Electronics, 2024 | | 2024 |
| In-Situ Detection of GaN Coss Changes Due to Aging for Device State-of-Health Determination in DC-DC Converters SK Murray, T Sigmund, S Zia, O Trescases IEEE Transactions on Power Electronics, 2024 | | 2024 |
| A Modular Bi-Directional Current-Controlled Inverter with Masterless Interleaving and Active Power Decoupling S Murray University of Toronto (Canada), 2020 | | 2020 |
