| Ferroelectric FET analog synapse for acceleration of deep neural network training M Jerry, PY Chen, J Zhang, P Sharma, K Ni, S Yu, S Datta 2017 IEEE international electron devices meeting (IEDM), 6.2. 1-6.2. 4, 2017 | 577 | 2017 |
| Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ... IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018 | 377 | 2018 |
| Observation of the nonlocal spin-orbital effective field X Fan, J Wu, Y Chen, MJ Jerry, H Zhang, JQ Xiao Nature communications 4 (1), 1799, 2013 | 308 | 2013 |
| A circuit compatible accurate compact model for ferroelectric-FETs K Ni, M Jerry, JA Smith, S Datta 2018 IEEE symposium on VLSI technology, 131-132, 2018 | 225 | 2018 |
| A ferroelectric field effect transistor based synaptic weight cell M Jerry, S Dutta, A Kazemi, K Ni, J Zhang, PY Chen, P Sharma, S Yu, ... Journal of Physics D: Applied Physics 51 (43), 434001, 2018 | 151 | 2018 |
| Vertex coloring of graphs via phase dynamics of coupled oscillatory networks A Parihar, N Shukla, M Jerry, S Datta, A Raychowdhury Scientific reports 7 (1), 911, 2017 | 143 | 2017 |
| Write disturb in ferroelectric FETs and its implication for 1T-FeFET AND memory arrays K Ni, X Li, JA Smith, M Jerry, S Datta IEEE Electron Device Letters 39 (11), 1656-1659, 2018 | 111 | 2018 |
| Computing with networks of oscillatory dynamical systems A Raychowdhury, A Parihar, GH Smith, V Narayanan, G Csaba, M Jerry, ... Proceedings of the IEEE 107 (1), 73-89, 2018 | 102 | 2018 |
| Computing with ferroelectric FETs: Devices, models, systems, and applications A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ... 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018 | 88 | 2018 |
| Programmable coupled oscillators for synchronized locomotion S Dutta, A Parihar, A Khanna, J Gomez, W Chakraborty, M Jerry, B Grisafe, ... Nature communications 10 (1), 3299, 2019 | 83 | 2019 |
| Quantitative Mapping of Phase Coexistence in Mott-Peierls Insulator during Electronic and Thermally Driven Phase Transition SD H Madan , M Jerry , A Pogrebnyakov , T Mayer ACS Nano, 2015 | 75 | 2015 |
| Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ... 2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016 | 71 | 2016 |
| Phase-transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current J Frougier, N Shukla, D Deng, M Jerry, A Aziz, L Liu, G Lavallee, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 59 | 2016 |
| Stochastic insulator-to-metal phase transition-based true random number generator M Jerry, K Ni, A Parihar, A Raychowdhury, S Datta IEEE Electron Device Letters 39 (1), 139-142, 2017 | 53 | 2017 |
| 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer H Madan, HT Zhang, M Jerry, D Mukherjee, N Alem, R Engel-Herbert, ... 2015 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2015 | 53 | 2015 |
| In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ... 2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018 | 50 | 2018 |
| Stochastic IMT (insulator-metal-transition) neurons: an interplay of thermal and threshold noise at bifurcation A Parihar, M Jerry, S Datta, A Raychowdhury Frontiers in neuroscience 12, 210, 2018 | 45 | 2018 |
| Ultra-low power probabilistic IMT neurons for stochastic sampling machines M Jerry, A Parihar, B Grisafe, A Raychowdhury, S Datta VLSI Technology, 2017 IEEE Symposium on, T186-T187, 2017 | 45 | 2017 |
| Enabling new computation paradigms with HyperFET-an emerging device WY Tsai, X Li, M Jerry, B Xie, N Shukla, H Liu, N Chandramoorthy, ... IEEE Transactions on Multi-Scale Computing Systems 2 (1), 30-48, 2016 | 45 | 2016 |
| Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors B Grisafe, M Jerry, JA Smith, S Datta IEEE Electron Device Letters 40 (10), 1602-1605, 2019 | 44 | 2019 |
Suman DattaJoseph M. Pettit Chair ProfessorVerified email at gatech.edu
