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Jongyeon Kim
Jongyeon Kim
University of minnesota, Yonsei university
Verified email at umn.edu
Title
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Year
Spin-based computing: Device concepts, current status, and a case study on a high-performance microprocessor
J Kim, A Paul, PA Crowell, SJ Koester, SS Sapatnekar, JP Wang, CH Kim
Proceedings of the IEEE 103 (1), 106-130, 2014
1842014
A magnetic tunnel junction based true random number generator with conditional perturb and real-time output probability tracking
WH Choi, Y Lv, J Kim, A Deshpande, G Kang, JP Wang, CH Kim
2014 IEEE International Electron Devices Meeting, 12.5. 1-12.5. 4, 2014
1562014
A technology-agnostic MTJ SPICE model with user-defined dimensions for STT-MRAM scalability studies
J Kim, A Chen, B Behin-Aein, S Kumar, JP Wang, CH Kim
2015 IEEE custom integrated circuits conference (CICC), 1-4, 2015
1112015
Improving STT-MRAM density through multibit error correction
B Del Bel, J Kim, CH Kim, SS Sapatnekar
2014 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2014
772014
Compositional investigation of liquid crystal alignment on tantalum oxide via ion beam irradiation
JY Kim, BY Oh, BY Kim, YH Kim, JW Han, JM Han, DS Seo
Applied Physics Letters 92 (4), 2008
552008
Spin-Hall effect MRAM based cache memory: A feasibility study
J Kim, B Tuohy, C Ma, WH Choi, I Ahmed, D Lilja, CH Kim
2015 73rd Annual Device Research Conference (DRC), 117-118, 2015
282015
Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model
J Kim, H Zhao, Y Jiang, A Klemm, JP Wang, CH Kim
72nd Device Research Conference, 155-156, 2014
222014
Liquid crystal alignment effects for nematic liquid crystal on homeotropic polyimide surface using new ion-beam source
DH Kang, SH Kim, BY Kim, JY Kim, CH Ok, YH Kim, JW Han, JH Kim, ...
Japanese Journal of Applied Physics 46 (10R), 6601, 2007
162007
A comparative study of single-poly embedded flash memory disturbance, program/erase speed, endurance, and retention characteristic
SH Song, J Kim, CH Kim
IEEE Transactions on Electron Devices 61 (11), 3737-3743, 2014
122014
New phenomena for the lifetime prediction of TANOS-based charge trap NAND flash memory
J Kim, C Kang, SI Chang, J Kim, Y Jeong, C Park, JH Kang, SH Kim, ...
68th Device Research Conference, 99-100, 2010
112010
Program/erase speed, endurance, retention, and disturbance characteristics of single-poly embedded flash cells
SH Song, J Kim, CH Kim
2013 IEEE International Reliability Physics Symposium (IRPS), MY. 4.1-MY. 4.6, 2013
102013
Improvement of permeation of solvent-free multilayer encapsulation of thin films on poly (ethylene terephthalate)
JW Han, HJ Kang, JY Kim, GY Kim, DS Seo
Japanese journal of applied physics 45 (12R), 9203, 2006
82006
Nickel oxide-induced crystallization of silicon for use in thin film transistors with a SiNx diffusion filter
JY Kim, JW Han, JM Han, YH Kim, BY Oh, BY Kim, SK Lee, DS Seo
Applied Physics Letters 92 (14), 2008
52008
Liquid Crystal Aligning Capabilities Treated on Organic Overcoat Thin Films by Ion Beam Irradiation Method
한정민, 김병용, 김종연, 김영환, 한진우, 황정연, 이상극, 강동훈, ...
전기전자재료학회논문지 20 (3), 245-249, 2007
42007
A comprehensive study on interface perpendicular MTJ variability
WH Choi, J Kim, I Ahmed, CH Kim
2015 73rd Annual Device Research Conference (DRC), 89-90, 2015
32015
Solution for warpage in the liquid crystal display module process
JH Kim, JY Hwang, BY Kim, JY Kim, DH Kang, DS Seo
Japanese journal of applied physics 45 (12L), L1277, 2006
22006
Spin-Based Logic and Memory Technologies for Low-Power Systems
J Kim
12016
Overstress-Free 4× VDD Switch in a Generic Logic Process Supporting High and Low Voltage Modes
SH Song, J Kim, CH Kim
JSTS: Journal of Semiconductor Technology and Science 15 (6), 664-670, 2015
2015
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Articles 1–18