Plasma based ion implantation system Y dong Lee, Y Tolmachev, V Volynets, V Pashkovskiy, A Ushakov, ... US Patent App. 12/153,703, 2008 | 47 | 2008 |
Experimental and theoretical study of the CF4 DC glow discharge positive column VN Volynets, AV Lukyanova, AT Rakhimov, DI Slovetsky, NV Suetin Journal of Physics D: Applied Physics 26 (4), 647, 1993 | 42 | 1993 |
Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor D Sung, S Jeong, Y Park, VN Volynets, AG Ushakov, GH Kim Journal of Vacuum Science & Technology A 27 (1), 13-19, 2009 | 33 | 2009 |
Experimental study of spatial nonuniformities in 100MHz capacitively coupled plasma using optical probe VN Volynets, AG Ushakov, D Sung, YN Tolmachev, VG Pashkovsky, ... Journal of Vacuum Science & Technology A 26 (3), 406-415, 2008 | 30 | 2008 |
Insights to scaling remote plasma sources sustained in NF3 mixtures S Huang, V Volynets, JR Hamilton, S Lee, IC Song, S Lu, J Tennyson, ... Journal of Vacuum Science & Technology A 35 (3), 2017 | 29 | 2017 |
Experimental study of plasma non-uniformities and the effect of phase-shift control in a very high frequency capacitive discharge V Volynets, H Shin, D Kang, D Sung Journal of Physics D: Applied Physics 43 (8), 085203, 2010 | 29 | 2010 |
The influence of anisotropy and non-locality of the electron distribution function as well as non-equilibrium ion diffusion on the electrodynamics of DC discharge at low pressure VA Feoktistov, VV Ivanov, AM Popov, AT Rakhimov, TV Rakhimova, ... Journal of Physics D: Applied Physics 30 (3), 423, 1997 | 28 | 1997 |
Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes V Volynets, Y Barsukov, G Kim, JE Jung, SK Nam, K Han, S Huang, ... Journal of Vacuum Science & Technology A 38 (2), 2020 | 24 | 2020 |
Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures S Huang, V Volynets, JR Hamilton, SK Nam, IC Song, S Lu, J Tennyson, ... Journal of Vacuum Science & Technology A 36 (2), 2018 | 23 | 2018 |
Frequency and electrode shape effects on etch rate uniformity in a dual-frequency capacitive reactor D Sung, V Volynets, W Hwang, Y Sung, S Lee, M Choi, GH Kim Journal of Vacuum Science & Technology A 30 (6), 2012 | 22 | 2012 |
Plasma uniformity and phase-controlled etching in a very high frequency capacitive discharge D Sung, J Woo, K Lim, K Kim, V Volynets, GH Kim Journal of Applied Physics 106 (2), 2009 | 22 | 2009 |
Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation Y Barsukov, V Volynets, S Lee, G Kim, B Lee, SK Nam, K Han Journal of Vacuum Science & Technology A 35 (6), 2017 | 20 | 2017 |
Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism JE Jung, Y Barsukov, V Volynets, G Kim, SK Nam, K Han, S Huang, ... Journal of Vacuum Science & Technology A 38 (2), 2020 | 18 | 2020 |
Spatial variation of plasma parameters and ion acceleration in an inductive plasma system VN Volynets, W Park, YN Tolmachev, VG Pashkovsky, J Yoo Journal of applied physics 99 (4), 2006 | 16 | 2006 |
Plasma based ion implantation apparatus Y dong Lee, Y Tolmachev, V Volynets, V Pashkovskiy US Patent App. 11/603,100, 2008 | 15 | 2008 |
Ion analysis system based on analyzer of ion energy distribution using retarded electric field YH Lee, A Ushakov, Y Tolmachev, V Volynets, WC Pak, V Pashkovskiy US Patent App. 11/751,812, 2008 | 14 | 2008 |
Highly selective Si3N4/SiO2 etching using an NF3 V Volynets, Y Barsukov, G Kim, JE Jung, SK Nam, K Han, S Huang, ... N2, 2020 | 13 | 2020 |
Electromagnetic accelerator having nozzle part WT Park, J Yoo, V Volynets US Patent App. 11/281,356, 2006 | 11 | 2006 |
Driving frequency modulation system and method for plasma accelerator WT Park, V Volynets US Patent 7,309,961, 2007 | 10 | 2007 |
Study of fluorocarbon plasma in 60 and 100MHz capacitively coupled discharges using mass spectrometry A Ushakov, V Volynets, S Jeong, D Sung, Y Ihm, J Woo, M Han Journal of Vacuum Science & Technology A 26 (5), 1198-1207, 2008 | 9 | 2008 |