T. Tiedje or J. T. Tiedje
T. Tiedje or J. T. Tiedje
Electrical and Computer Engineering, Faculty of Engineering, University of Victoria, Victoria, BC
Verified email at uvic.ca
Cited by
Cited by
Disorder and the optical-absorption edge of hydrogenated amorphous silicon
GD Cody, T Tiedje, B Abeles, B Brooks, Y Goldstein
Physical Review Letters 47 (20), 1480, 1981
Limiting efficiency of silicon solar cells
TOM Tiedje, ELI Yablonovitch, GD Cody, BG Brooks
IEEE Transactions on electron devices 31 (5), 711-716, 1984
A physical interpretation of dispersive transport in disordered semiconductors
T Tiedje, A Rose
Solid State Communications 37 (1), 49-52, 1981
Evidence for exponential band tails in amorphous silicon hydride
T Tiedje, JM Cebulka, DL Morel, B Abeles
Physical Review Letters 46 (21), 1425, 1981
Amorphous semiconductor superlattices
B Abeles, T Tiedje
Physical Review Letters 51 (21), 2003, 1983
Molecular beam epitaxy growth of
S Tixier, M Adamcyk, T Tiedje, S Francoeur, A Mascarenhas, P Wei, ...
Applied physics letters 82 (14), 2245-2247, 2003
Band gap of
S Francoeur, MJ Seong, A Mascarenhas, S Tixier, M Adamcyk, T Tiedje
Applied physics letters 82 (22), 3874-3876, 2003
Giant spin-orbit bowing in GaAs 1− x Bi x
B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje
Physical review letters 97 (6), 067205, 2006
Laser Stark spectroscopy in the 10 [mu] m region: The [nu] 3 bands of CH3F
SM Freund, G Duxbury, M Romheld, JT Tiedje, T Oka
Journal of Molecular Spectroscopy 52 (1), 38-57, 1974
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole
Ultramicroscopy 58 (1), 104-113, 1995
Temperature dependence of the Urbach edge in GaAs
SR Johnson, T Tiedje
Journal of applied physics 78 (9), 5609-5613, 1995
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney
Journal of Applied Physics 111 (11), 113108, 2012
Composition dependence of photoluminescence of alloys
X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang
Applied physics letters 95 (4), 041903, 2009
Optical absorption edge of semi-insulating GaAs and InP at high temperatures
M Beaudoin, AJG DeVries, SR Johnson, H Laman, T Tiedje
Applied Physics Letters 70 (26), 3540-3542, 1997
Observation of leaky slab modes in an air-bridged semiconductor waveguide with a two-dimensional photonic lattice
M Kanskar, P Paddon, V Pacradouni, R Morin, A Busch, JF Young, ...
Applied physics letters 70 (11), 1438-1440, 1997
Effect of molecular beam epitaxy growth conditions on the Bi content of
X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick
Applied Physics Letters 92 (19), 192110, 2008
Recombination centers in phosphorous doped hydrogenated amorphous silicon
CR Wronski, B Abeles, T Tiedje, GD Cody
Solid State Communications 44 (10), 1423-1426, 1982
Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy
RB Lewis, M Masnadi-Shirazi, T Tiedje
Applied Physics Letters 101 (8), 082112, 2012
Preparation and characterization of B x C 1− x thin films with the graphite structure
BM Way, JR Dahn, T Tiedje, K Myrtle, M Kasrai
Physical Review B 46 (3), 1697, 1992
Band tail recombination limit to the output voltage of amorphous silicon solar cells
T Tiedje
Applied Physics Letters 40 (7), 627-629, 1982
The system can't perform the operation now. Try again later.
Articles 1–20