| Nanobatteries in redox-based resistive switches require extension of memristor theory I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ... Nature communications 4 (1), 1771, 2013 | 568 | 2013 |
| Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures T Tsuruoka, I Valov, S Tappertzhofen, J Van Den Hurk, T Hasegawa, ... Advanced functional materials 25 (40), 6374-6381, 2015 | 168 | 2015 |
| Realization of boolean logic functionality using redox‐based memristive devices A Siemon, T Breuer, N Aslam, S Ferch, W Kim, J Van Den Hurk, V Rana, ... Advanced functional materials 25 (40), 6414-6423, 2015 | 154 | 2015 |
| Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches J Van den Hurk, E Linn, H Zhang, R Waser, I Valov Nanotechnology 25 (42), 425202, 2014 | 78 | 2014 |
| Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures J van den Hurk, V Havel, E Linn, R Waser, I Valov Scientific Reports 3 (1), 2856, 2013 | 54 | 2013 |
| Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory DY Cho, I Valov, J van den Hurk, S Tappertzhofen, R Waser Advanced Materials, 2012 | 50 | 2012 |
| Physical origins and suppression of Ag dissolution in GeS x-based ECM cells J van den Hurk, AC Dippel, DY Cho, J Straquadine, U Breuer, P Walter, ... Physical Chemistry Chemical Physics 16 (34), 18217-18225, 2014 | 36 | 2014 |
| Preparation and characterization of GeSx thin-films for resistive switching memories J Van Den Hurk, I Valov, R Waser Thin Solid Films 527, 299-302, 2013 | 35 | 2013 |
| Processes and Limitations during Filament Formation and Dissolution in GeSx-based ReRAM Memory Cells J van den Hurk, S Menzel, R Waser, I Valov The Journal of Physical Chemistry C 119 (32), 18678-18685, 2015 | 30 | 2015 |
| Simulation of polarity independent RESET in electrochemical metallization memory cells S Menzel, I Valov, R Waser, N Adler, J Van Den Hurk, S Tappertzhofen 2013 5th IEEE International Memory Workshop, 92-95, 2013 | 26 | 2013 |
| (Keynote) atomic scale and Interface interactions in redox-based resistive switching memories I Valov, S Tappertzhofen, E Linn, S Menzel, J van den Hurk, R Waser ECS transactions 64 (14), 3, 2014 | 8 | 2014 |
| A compact and low-weight sputtering unit for in situ investigations of thin film growth at synchrotron radiation beamlines P Walter, AC Dippel, K Pflaum, J Wernecke, J Van Den Hurk, J Blume, ... Review of Scientific Instruments 86 (5), 2015 | 4 | 2015 |
| Method for reading out a resistive memory cell and a memory cell for carrying out the method J van den Hurk, E Linn, R Waser, I Valov US Patent 9,865,343, 2018 | 2 | 2018 |
| Germanium sulphide based resistive switching devices J Van Den Hurk, R Waser, A Vescan Verlag Dr. Hut, 2016 | 1 | 2016 |
| Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories I Valov, S Tappertzhofen, E Linn, S Menzel, J van den Hurk, R Waser Electrochemical Society Meeting Abstracts 226, 2034-2034, 2014 | 1 | 2014 |
| Poster: Memristive Systems J Ho Yoon, HS Jung, M Hwan Lee, G Hwan Kim, S Ji Song, J Yeong Seok, ... Frontiers in Electronic Materials: A Collection of Extended Abstracts of the …, 2012 | | 2012 |
| Nanosession: Electrochemical Metallization Memories T Hasegawa, Y Itoh, T Tsuruoka, M Aono, S Tappertzhofen, I Valov, ... Frontiers in Electronic Materials: A Collection of Extended Abstracts of the …, 2012 | | 2012 |
| Thermal Ag-doping of Germanium Sulphide J van den Hurk, AL Debald, AC Dippel, R Waser, I Valov DESY Photon Science Annual Report 2012, 2012 | | 2012 |
Rainer WaserProfessur Elektronische Materialien, RWTH Aachen UniversityVerified email at iwe.rwth-aachen.de
