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Siyu Koswatta
Siyu Koswatta
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Cited by
Year
Performance comparison between pin tunneling transistors and conventional MOSFETs
SO Koswatta, MS Lundstrom, DE Nikonov
IEEE Transactions on Electron Devices 56 (3), 456-465, 2009
4942009
Carbon nanotube complementary wrap-gate transistors
AD Franklin, SO Koswatta, DB Farmer, JT Smith, L Gignac, CM Breslin, ...
Nano letters 13 (6), 2490-2495, 2013
2212013
Nonequilibrium green's function treatment of phonon scattering in carbon-nanotube transistors
SO Koswatta, S Hasan, MS Lundstrom, MP Anantram, DE Nikonov
IEEE Transactions on Electron Devices 54 (9), 2339-2351, 2007
2142007
On the possibility of obtaining MOSFET-like performance and sub-60-mV/dec swing in 1-D broken-gap tunnel transistors
SO Koswatta, SJ Koester, W Haensch
IEEE Transactions on electron devices 57 (12), 3222-3230, 2010
2092010
High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization
CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ...
2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014
1922014
Computational study of carbon nanotube pin tunnel FETs
SO Koswatta, DE Nikonov, MS Lundstrom
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
1522005
Ultimate RF performance potential of carbon electronics
SO Koswatta, A Valdes-Garcia, MB Steiner, YM Lin, P Avouris
IEEE Transactions on Microwave Theory and Techniques 59 (10), 2739-2750, 2011
1482011
Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors
SO Koswatta, MS Lundstrom, MP Anantram, DE Nikonov
Applied Physics Letters 87 (25), 2005
1032005
Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling
SO Koswatta, MS Lundstrom, DE Nikonov
Nano Letters 7 (5), 1160-1164, 2007
962007
RaPiD: AI accelerator for ultra-low precision training and inference
S Venkataramani, V Srinivasan, W Wang, S Sen, J Zhang, A Agrawal, ...
2021 ACM/IEEE 48th Annual International Symposium on Computer Architecture …, 2021
932021
9.1 A 7nm 4-core AI chip with 25.6 TFLOPS hybrid FP8 training, 102.4 TOPS INT4 inference and workload-aware throttling
A Agrawal, SK Lee, J Silberman, M Ziegler, M Kang, S Venkataramani, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 144-146, 2021
872021
Influence of phonon scattering on the performance of pin band-to-band tunneling transistors
SO Koswatta, MS Lundstrom, DE Nikonov
Applied Physics Letters 92 (4), 2008
822008
Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate
G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ...
IEEE Electron Device Letters 32 (11), 1516-1518, 2011
732011
GIDL in doped and undoped FinFET devices for low-leakage applications
P Kerber, Q Zhang, S Koswatta, A Bryant
IEEE Electron Device Letters 34 (1), 6-8, 2012
702012
Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias
SO Koswatta, S Hasan, MS Lundstrom, MP Anantram, DE Nikonov
Applied Physics Letters 89 (2), 2006
702006
1D broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing
SO Koswatta, SJ Koester, W Haensch
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
612009
Capacitor-based cross-point array for analog neural network with record symmetry and linearity
Y Li, S Kim, X Sun, P Solomon, T Gokmen, H Tsai, S Koswatta, Z Ren, ...
2018 IEEE Symposium on VLSI Technology, 25-26, 2018
572018
Ultra low contact resistivities for CMOS beyond 10-nm node
Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ...
IEEE electron device letters 34 (6), 723-725, 2013
542013
Low voltage tunnel field-effect transistor (TFET) and method of making same
AC Seabaugh, P Fay, X Huili Grace, Z Guangle, LU Yeqing, MA Wistey, ...
US Patent 8,796,733, 2014
512014
InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field
R Li, Y Lu, SD Chae, G Zhou, Q Liu, C Chen, M Shahriar Rahman, ...
physica status solidi c 9 (2), 389-392, 2012
512012
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