| Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ... ACS nano 11 (10), 10222-10229, 2017 | 204 | 2017 |
| Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang, SQ Zhang, S Huang, ... Nature electronics 3 (3), 141-147, 2020 | 141 | 2020 |
| Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors M Si, Y Hu, Z Lin, X Sun, A Charnas, D Zheng, X Lyu, H Wang, K Cho, ... Nano Letters 21 (1), 500-506, 2020 | 118 | 2020 |
| Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5 G Qiu, Y Du, A Charnas, H Zhou, S Jin, Z Luo, DY Zemlyanov, X Xu, ... Nano letters 16 (12), 7364-7369, 2016 | 91 | 2016 |
| Scaled atomic-layer-deposited indium oxide nanometer transistors with maximum drain current exceeding 2 A/mm at drain voltage of 0.7 V M Si, Z Lin, A Charnas, DY Peide IEEE Electron Device Letters 42 (2), 184-187, 2020 | 60 | 2020 |
| Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS2 for High‐Performance Photodetectors JK Qin, G Qiu, W He, J Jian, MW Si, YQ Duan, A Charnas, DY Zemlyanov, ... Advanced Functional Materials 28 (48), 1806254, 2018 | 54 | 2018 |
| The resurrection of tellurium as an elemental two-dimensional semiconductor G Qiu, A Charnas, C Niu, Y Wang, W Wu, PD Ye npj 2D Materials and Applications 6 (1), 17, 2022 | 44 | 2022 |
| Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature … M Si, A Charnas, Z Lin, DY Peide IEEE Transactions on Electron Devices 68 (3), 1075-1080, 2021 | 40 | 2021 |
| Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ... ACS omega 4 (24), 20756-20761, 2019 | 35 | 2019 |
| Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment A Charnas, M Si, Z Lin, PD Ye Applied Physics Letters 118 (5), 2021 | 33 | 2021 |
| Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm LM Yang, G Qiu, MW Si, AR Charnas, CA Milligan, DY Zemlyanov, ... 2016 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2016 | 29 | 2016 |
| Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio A Charnas, Z Lin, Z Zhang, PD Ye Applied Physics Letters 119 (26), 2021 | 24* | 2021 |
| Atomically thin indium-tin-oxide transistors enabled by atomic layer deposition Z Zhang, Y Hu, Z Lin, M Si, A Charnas, K Cho, DY Peide IEEE Transactions on Electron Devices 69 (1), 231-236, 2021 | 24 | 2021 |
| How important is the metal–semiconductor contact for Schottky barrier transistors: a case study on few-layer black phosphorus? L Yang, A Charnas, G Qiu, YM Lin, CC Lu, W Tsai, Q Paduano, M Snure, ... ACS omega 2 (8), 4173-4179, 2017 | 23 | 2017 |
| Ultrafast Laser‐Shock‐Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films G Qiu, Q Nian, M Motlag, S Jin, B Deng, Y Deng, AR Charnas, PD Ye, ... Advanced Materials 30 (10), 1704405, 2018 | 21 | 2018 |
| Germanium-doped metallic ohmic contacts in black phosphorus field-effect transistors with ultra-low contact resistance HM Chang, A Charnas, YM Lin, PD Ye, CI Wu, CH Wu Scientific reports 7 (1), 16857, 2017 | 19 | 2017 |
| Ultrathin InGaO thin film transistors by atomic layer deposition J Zhang, D Zheng, Z Zhang, A Charnas, Z Lin, DY Peide IEEE Electron Device Letters 44 (2), 273-276, 2022 | 18 | 2022 |
| First experimental demonstration of robust HZO/β-Ga₂O₃ ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications in a high … J Noh, H Bae, J Li, Y Luo, Y Qu, TJ Park, M Si, X Chen, AR Charnas, ... IEEE Transactions on Electron Devices 68 (5), 2515-2521, 2021 | 17 | 2021 |
| Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors HM Chang, KL Fan, A Charnas, DY Peide, YM Lin, CI Wu, CH Wu Journal of Physics D: Applied Physics 51 (13), 135306, 2018 | 17 | 2018 |
| High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with … Z Lin, M Si, YC Luo, X Lyu, A Charnas, Z Chen, Z Yu, W Tsai, PC McIntyre, ... 2021 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2021 | 16 | 2021 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityVahvistettu sähköpostiosoite verkkotunnuksessa purdue.edu
