4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication C Lee, C Zhang, M Cantore, RM Farrell, SH Oh, T Margalith, JS Speck, ...
Optics express 23 (12), 16232-16237, 2015
161 2015 Hybrid tunnel junction contacts to III–nitride light-emitting diodes EC Young, BP Yonkee, F Wu, SH Oh, SP DenBaars, S Nakamura, ...
Applied Physics Express 9 (2), 022102, 2016
145 2016 Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth Y Zhao, SH Oh, F Wu, Y Kawaguchi, S Tanaka, K Fujito, JS Speck, ...
Applied Physics Express 6 (6), 062102, 2013
107 2013 Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ...
Applied Physics Letters 112 (4), 041104, 2018
70 2018 High-power low-droop violet semipolar InGaN/GaN light-emitting diodes with thick active layer design DL Becerra, Y Zhao, SH Oh, CD Pynn, K Fujito, SP DenBaars, ...
Applied Physics Letters 105 (17), 171106, 2014
68 2014 Thermally enhanced blue light-emitting diode J Xue, Y Zhao, SH Oh, WF Herrington, JS Speck, SP DenBaars, ...
Applied Physics Letters 107 (12), 121109, 2015
61 2015 Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to∼ 1 W SH Oh, BP Yonkee, M Cantore, RM Farrell, JS Speck, S Nakamura, ...
Applied Physics Express 9 (10), 102102, 2016
43 2016 Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes NG Young, RM Farrell, S Oh, M Cantore, F Wu, S Nakamura, ...
Applied Physics Letters 108 (6), 061105, 2016
43 2016 Dynamic characteristics of 410 nm semipolar III-nitride laser diodes with a modulation bandwidth of over 5 GHz C Lee, C Zhang, DL Becerra, S Lee, CA Forman, SH Oh, RM Farrell, ...
Applied Physics Letters 109 (10), 101104, 2016
41 2016 Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ...
Optics express 25 (16), 19343-19353, 2017
40 2017 Internal quantum efficiency and carrier dynamics in semipolar (20 21) InGaN/GaN light-emitting diodes S Okur, M Nami, AK Rishinaramangalam, SH Oh, SP DenBaars, S Liu, ...
Optics express 25 (3), 2178-2186, 2017
34 2017 Trade-off between bandwidth and efficiency in semipolar InGaN/GaN single- and multiple-quantum-well light-emitting diodes M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ...
Applied Physics Letters 112 (19), 191102, 2018
33 2018 High-power LEDs using Ga-doped ZnO current-spreading layers AJ Mughal, S Oh, A Myzaferi, S Nakamura, JS Speck, SP DenBaars
Electronics Letters 52 (4), 304-306, 2016
18 2016 2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation C Lee, C Zhang, M Cantore, R Farrell, SH Oh, T Margalith, JS Speck, ...
2015 IEEE Summer Topicals Meeting Series (SUM), 112-113, 2015
18 2015 Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells SJ Kowsz, CD Pynn, SH Oh, RM Farrell, JS Speck, SP DenBaars, ...
Applied Physics Letters 107 (10), 101104, 2015
17 2015 Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy CD Pynn, SJ Kowsz, SH Oh, H Gardner, RM Farrell, S Nakamura, ...
Applied Physics Letters 109 (4), 041107, 2016
13 2016 On the optical polarization properties of semipolar and InGaN/GaN quantum wells C Mounir, IL Koslow, T Wernicke, M Kneissl, LY Kuritzky, NL Adamski, ...
Journal of Applied Physics 123 (8), 085705, 2018
10 2018 High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication C Lee, C Zhang, D Becerra, S Lee, SH Oh, RM Farrell, JS Speck, ...
2016 IEEE Photonics Conference (IPC), 809-810, 2016
7 2016 Facet on a gallium and nitrogen containing laser diode JW Raring, H Huang, P Skahan, SH Oh, B Yonkee, A Sztein, Q Wei
US Patent 10,559,939, 2020
6 2020 Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission SJ Kowsz, CD Pynn, SH Oh, RM Farrell, SP DenBaars, S Nakamura
Journal of Applied Physics 120 (3), 033102, 2016
6 2016