Zachary Lochner
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Control of quantum-confined stark effect in InGaN-based quantum wells
JH Ryou, PD Yoder, J Liu, Z Lochner, H Kim, S Choi, HJ Kim, RD Dupuis
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1080-1091, 2009
Ordered nanowire array blue/near‐UV light emitting diodes
S Xu, C Xu, Y Liu, Y Hu, R Yang, Q Yang, JH Ryou, HJ Kim, Z Lochner, ...
Advanced materials 22 (42), 4749-4753, 2010
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
Z Lochner, TT Kao, YS Liu, XH Li, M Mahbub Satter, SC Shen, ...
Applied Physics Letters 102 (10), 101110, 2013
Bandgap bowing in BGaN thin films
A Ougazzaden, S Gautier, T Moudakir, Z Djebbour, Z Lochner, S Choi, ...
Applied Physics Letters 93 (8), 083118, 2008
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ...
Journal of Crystal Growth 388, 143-149, 2014
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
S Choi, HJ Kim, Z Lochner, J Kim, RD Dupuis, AM Fischer, R Juday, ...
Journal of Crystal Growth 388, 137-142, 2014
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ...
Applied Physics Letters 100 (5), 051101, 2012
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
TT Kao, YS Liu, M Mahbub Satter, XH Li, Z Lochner, P Douglas Yoder, ...
Applied Physics Letters 103 (21), 211103, 2013
Effects of a step-graded AlxGa1−xN electron blocking layer in InGaN-based laser diodes
Y Zhang, TT Kao, J Liu, Z Lochner, SS Kim, JH Ryou, RD Dupuis, ...
Journal of Applied Physics 109 (8), 083115, 2011
Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers
MM Satter, HJ Kim, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder
IEEE Journal of Quantum Electronics 48 (5), 703-711, 2012
Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
RD Dupuis, JH Ryou, SC Shen, PD Yoder, Y Zhang, HJ Kim, S Choi, ...
Journal of Crystal Growth 310 (23), 5217-5222, 2008
High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors
YC Lee, Y Zhang, HJ Kim, S Choi, Z Lochner, RD Dupuis, JH Ryou, ...
IEEE transactions on electron devices 57 (11), 2964-2969, 2010
Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion-and enhancement-mode operation
S Choi, HJ Kim, Z Lochner, Y Zhang, YC Lee, SC Shen, JH Ryou, ...
Applied Physics Letters 96 (24), 243506, 2010
Effect of silicon doping in the quantum-well barriers on the electrical and optical properties of visible green light-emitting diodes
JH Ryou, J Limb, W Lee, J Liu, Z Lochner, D Yoo, RD Dupuis
IEEE Photonics Technology Letters 20 (21), 1769-1771, 2008
The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells
T Li, QY Wei, AM Fischer, JY Huang, YU Huang, FA Ponce, JP Liu, ...
Applied Physics Letters 102 (4), 041115, 2013
NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate
Z Lochner, H Jin Kim, YC Lee, Y Zhang, S Choi, SC Shen, P Doug Yoder, ...
Applied Physics Letters 99 (19), 193501, 2011
AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport
MM Satter, Z Lochner, TT Kao, YS Liu, XH Li, SC Shen, RD Dupuis, ...
IEEE Journal of Quantum Electronics 50 (3), 166-173, 2014
Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates
YS Liu, Z Lochner, TT Kao, MM Satter, XH Li, JH Ryou, SC Shen, ...
physica status solidi (c) 11 (2), 258-260, 2014
GaN/InGaN Heterojunction Bipolar Transistors With
SC Shen, RD Dupuis, YC Lee, HJ Kim, Y Zhang, Z Lochner, PD Yoder, ...
IEEE electron device letters 32 (8), 1065-1067, 2011
GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2)
YC Lee, Y Zhang, ZM Lochner, HJ Kim, JH Ryou, RD Dupuis, SC Shen
physica status solidi (a) 209 (3), 497-500, 2012
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