| Control of quantum-confined stark effect in InGaN-based quantum wells JH Ryou, PD Yoder, J Liu, Z Lochner, H Kim, S Choi, HJ Kim, RD Dupuis IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1080-1091, 2009 | 293 | 2009 |
| Ordered nanowire array blue/near‐UV light emitting diodes S Xu, C Xu, Y Liu, Y Hu, R Yang, Q Yang, JH Ryou, HJ Kim, Z Lochner, ... Advanced materials 22 (42), 4749-4753, 2010 | 262 | 2010 |
| Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, M Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 102 (10), 2013 | 96 | 2013 |
| Bandgap bowing in BGaN thin films A Ougazzaden, S Gautier, T Moudakir, Z Djebbour, Z Lochner, S Choi, ... Applied Physics Letters 93 (8), 2008 | 71 | 2008 |
| Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ... Journal of Crystal Growth 388, 143-149, 2014 | 66 | 2014 |
| Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ... Applied Physics Letters 100 (5), 2012 | 66 | 2012 |
| Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating S Choi, HJ Kim, Z Lochner, J Kim, RD Dupuis, AM Fischer, R Juday, ... Journal of Crystal Growth 388, 137-142, 2014 | 59 | 2014 |
| Effects of a step-graded AlxGa1− xN electron blocking layer in InGaN-based laser diodes Y Zhang, TT Kao, J Liu, Z Lochner, SS Kim, JH Ryou, RD Dupuis, ... Journal of Applied Physics 109 (8), 2011 | 49 | 2011 |
| Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors TT Kao, YS Liu, M Satter, XH Li, Z Lochner, P Douglas Yoder, ... Applied Physics Letters 103 (21), 2013 | 46 | 2013 |
| Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers MM Satter, HJ Kim, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder IEEE Journal of Quantum Electronics 48 (5), 703-711, 2012 | 44 | 2012 |
| Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes RD Dupuis, JH Ryou, SC Shen, PD Yoder, Y Zhang, HJ Kim, S Choi, ... Journal of Crystal Growth 310 (23), 5217-5222, 2008 | 42 | 2008 |
| High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors YC Lee, Y Zhang, HJ Kim, S Choi, Z Lochner, RD Dupuis, JH Ryou, ... IEEE transactions on electron devices 57 (11), 2964-2969, 2010 | 37 | 2010 |
| Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion-and enhancement-mode operation S Choi, HJ Kim, Z Lochner, Y Zhang, YC Lee, SC Shen, JH Ryou, ... Applied Physics Letters 96 (24), 2010 | 34 | 2010 |
| , et al. Liu J J Liu, L Liu, M Liu, PP Liu, P Liu, Q Liu, RS Liu, S Liu, TL Liu, T Liu, W Liu, ... La Torre 100, G05-1206, 2022 | 32 | 2022 |
| Effect of silicon doping in the quantum-well barriers on the electrical and optical properties of visible green light-emitting diodes JH Ryou, J Limb, W Lee, J Liu, Z Lochner, D Yoo, RD Dupuis IEEE Photonics Technology Letters 20 (21), 1769-1771, 2008 | 31 | 2008 |
| The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells T Li, QY Wei, AM Fischer, JY Huang, YU Huang, FA Ponce, JP Liu, ... Applied Physics Letters 102 (4), 2013 | 29 | 2013 |
| NpN-GaN/InxGa1− xN/GaN heterojunction bipolar transistor on free-standing GaN substrate Z Lochner, H Jin Kim, YC Lee, Y Zhang, S Choi, SC Shen, P Doug Yoder, ... Applied Physics Letters 99 (19), 2011 | 29 | 2011 |
| AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport MM Satter, Z Lochner, TT Kao, YS Liu, XH Li, SC Shen, RD Dupuis, ... IEEE Journal of Quantum Electronics 50 (3), 166-173, 2014 | 21 | 2014 |
| Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates YS Liu, Z Lochner, TT Kao, MM Satter, XH Li, JH Ryou, SC Shen, ... physica status solidi (c) 11 (2), 258-260, 2014 | 20 | 2014 |
| GaN/InGaN Heterojunction Bipolar Transistors With SC Shen, RD Dupuis, YC Lee, HJ Kim, Y Zhang, Z Lochner, PD Yoder, ... IEEE electron device letters 32 (8), 1065-1067, 2011 | 20 | 2011 |
