AlGaN/GaN-based laterally gated high-electron-mobility transistors with optimized linearity O Odabaşı, D Yılmaz, E Aras, KE Asan, S Zafar, BÇ Akoğlu, B Bütün, ...
IEEE Transactions on Electron Devices 68 (3), 1016-1023, 2021
18 2021 Exceptional adaptable MWIR thermal emission for ordinary objects covered with thin VO2 film H Kocer, MC Cakir, Y Durna, MC Soydan, O Odabasi, H Isik, K Aydın, ...
Journal of Quantitative Spectroscopy and Radiative Transfer 262, 107500, 2021
15 2021 Improved T MAX Estimation in GaN HEMTs Using an Equivalent Hot Point Approximation O Odabaşı, MÖ Akar, B Bütün, E Özbay
IEEE Transactions on Electron Devices 67 (4), 1553-1559, 2020
11 2020 Subwavelength densely packed disordered semiconductor metasurface units for photoelectrochemical hydrogen generation TG Ulusoy Ghobadi, A Ghobadi, O Odabasi, F Karadas, E Ozbay
ACS Applied Energy Materials 5 (3), 2826-2837, 2022
7 2022 Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices O Odabasi, A Ghobadi, TGU Ghobadi, Y Unal, G Salkım, G Basar, B Butun, ...
IEEE Electron Device Letters 43 (10), 1609-1612, 2022
5 2022 Realistic channel temperature simulation of AlGaN/GaN high electron mobility transistors O Odabaşı, B Bütün, E Özbay
2019 European Microwave Conference in Central Europe (EuMCE), 87-90, 2019
4 2019 DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric D Yılmaz, O Odabaşı, G Salkım, E Urfali, BÇ Akoğlu, E Özbay, Ş Altındal
Semiconductor Science and Technology 37 (8), 085008, 2022
3 2022 Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs O Odabasi, A Ghobadi, TGU Ghobadi, E Guneysu, E Urfali, G Yaglioglu, ...
IEEE Transactions on Electron Devices, 2023
1 2023 N-Polar GaN Deep Recess HEMT With Atomic Layer Deposition HfO O Odabasi, S Mohanty, K Khan, E Ahmadi
IEEE Transactions on Electron Devices, 2023
1 2023 Improved drain lag by reduced surface current in GaN HEMT via an ultrathin HfO2 blanket layer B Güneş, A Ghobadi, O Odabasi, B Bütün, E Özbay
Semiconductor Science and Technology 38 (6), 065002, 2023
1 2023 Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements S Zafar, Y Durna, H Kocer, BC Akoglu, YE Aras, O Odabasi, B Butun, ...
IEEE Transactions on Device and Materials Reliability 23 (1), 72-79, 2022
1 2022 Improved Robustness, Stability and Linearity in GaN Based High Electron Mobility Transistors for 5G Applications O Odabaşı
PQDT-Global, 2021
1 2021 Investigation of ALD HfSiOx as gate dielectric on β-Ga2O3 (001) X Zhai, Z Wen, O Odabasi, E Achamyeleh, K Sun, E Ahmadi
Applied Physics Letters 124 (13), 2024
2024 Ultrathin interfacial layer and pre-gate annealing to suppress virtual gate formation in GaN-based transistors: The impact of trapping and fluorine inclusion O Odabasi, A Ghobadi, TGU Ghobadi, B Butun, E Ozbay
IEEE Electron Device Letters 43 (10), 1613-1616, 2022
2022 Nanometer-thick ınsertion layer for the effective passivation of surface traps and ımproved edge acuity for AlGaN/GaN HEMTs O Odabaşı, A Ghobadi, TGU Ghobadi, E Güneysu, E Urfalı, G Yağlıoğlu, ...
Institute of Electrical and Electronics Engineers, 0
Exceptional adaptable MWIR thermal emission for ordinary objects covered with thin VO2 film Y Durna, H Kocer, K Aydın, MC Cakir, MC Soydan, O Odabasi, H Işık, ...
Elsevier Ltd, 0
Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices O Odabaşı, A Ghobadi, TGU Ghobadi, Y Ünal, G Salkım, G Başar, B Bütün, ...
Institute of Electrical and Electronics Engineers, 0
Emrehan Halıcı ve Türkiye'de teknolojiye olan katkıları F Gök, O Odabaşı, H Topözlü, N Ulaş, OT Yavaşcan
Bilkent University, 0
Ekmel OzbayProfessor, Bilkent University, Ankara, TURKEYVahvistettu sähköpostiosoite verkkotunnuksessa bilkent.edu.tr
