Seuraa
Robert Ashcraft
Robert Ashcraft
MIT Alumnus
Vahvistettu sähköpostiosoite verkkotunnuksessa alum.mit.edu
Nimike
Viittaukset
Viittaukset
Vuosi
Modeling fast biomass pyrolysis in a gas–solid vortex reactor
RW Ashcraft, GJ Heynderickx, GB Marin
Chemical Engineering Journal 207, 195-208, 2012
1152012
Detailed kinetic modeling of iron nanoparticle synthesis from the decomposition of Fe (CO) 5
JZ Wen, CF Goldsmith, RW Ashcraft, WH Green
The Journal of Physical Chemistry C 111 (15), 5677-5688, 2007
992007
Predicting solvation energies for kinetic modeling
A Jalan, RW Ashcraft, RH West, WH Green
Annual Reports Section" C"(Physical Chemistry) 106, 211-258, 2010
802010
Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon
D Niu, RW Ashcraft, GN Parsons
Applied physics letters 80 (19), 3575-3577, 2002
792002
Carbonate formation during post-deposition ambient exposure of high- dielectrics
T Gougousi, D Niu, RW Ashcraft, GN Parsons
Applied Physics Letters 83 (17), 3543-3545, 2003
712003
Ab initio aqueous thermochemistry: application to the oxidation of hydroxylamine in nitric acid solution
RW Ashcraft, S Raman, WH Green
The Journal of Physical Chemistry B 111 (41), 11968-11983, 2007
612007
Oxidation of hydroxylamine by nitrous and nitric acids. Model development from first principle SCRF calculations
S Raman, RW Ashcraft, M Vial, ML Klasky
The Journal of Physical Chemistry A 109 (38), 8526-8536, 2005
482005
Assessment of a Gas–Solid Vortex Reactor for SO2/NOx Adsorption from Flue Gas
RW Ashcraft, J Kovacevic, GJ Heynderickx, GB Marin
Industrial & Engineering Chemistry Research 52 (2), 861-875, 2013
412013
Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon
D Niu, RW Ashcraft, Z Chen, S Stemmer, GN Parsons
Journal of the Electrochemical Society 150 (5), F102, 2003
402003
Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon
D Niu, RW Ashcraft, Z Chen, S Stemmer, GN Parsons
Applied physics letters 81 (4), 676-678, 2002
402002
Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications
D Niu, RW Ashcraft, MJ Kelly, JJ Chambers, TM Klein, GN Parsons
Journal of applied physics 91 (9), 6173-6180, 2002
362002
Reactions of films with (001) Si substrates and with polycrystalline Si capping layers
S Stemmer, DO Klenov, Z Chen, D Niu, RW Ashcraft, GN Parsons
Applied physics letters 81 (4), 712-714, 2002
352002
Predicted Reaction Rates of HxNyOz Intermediates in the Oxidation of Hydroxylamine by Aqueous Nitric Acid
RW Ashcraft, S Raman, WH Green
The Journal of Physical Chemistry A 112 (33), 7577-7593, 2008
272008
Thermochemical properties and group values for nitrogen-containing molecules
RW Ashcraft, WH Green
The Journal of Physical Chemistry A 112 (38), 9144-9152, 2008
232008
RMG-reaction mechanism generator v4. 0.1
WH Green, JW Allen, BA Buesser, RW Ashcraft, GJ Beran, CA Class, ...
RMG, Cambridge, MA, accessed Apr 9, 2018, 2013
212013
RMG-Reaction Mechanism Generator v 4.0. 1. 2013
WH Green, JW Allen, BA Buesser, RW Ashcraft, GJ Beran, CA Class, ...
Google Scholar There is no corresponding record for this reference, 0
15
Solid electrolyte for a negative electrode of a secondary battery and methods for the manufacture of an electrochemical cell
KE Thomas-alyea, R Ashcraft, L Miara
US Patent 10,840,513, 2020
82020
RMG reaction mechanism generator version 3.3
WH Green, JW Allen, RW Ashcraft, GJ Beran, CA Class, C Gao, ...
82013
Effect of plasma on yttrium oxide and yttrium–oxynitride dielectrics
D Niu, RW Ashcraft, C Hinkle, GN Parsons
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (3 …, 2004
72004
RMG-reaction mechanism generator v3. 3
WH Green, JW Allen, RW Ashcraft, GJ Beran, CA Class, C Gao, ...
62011
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Artikkelit 1–20