Seuraa
LINGMING YANG
LINGMING YANG
Vahvistettu sähköpostiosoite verkkotunnuksessa purdue.edu
Nimike
Viittaukset
Viittaukset
Vuosi
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...
Nano letters 14 (11), 6275-6280, 2014
7592014
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
2982016
Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications
J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ...
ACS nano 11 (10), 10222-10229, 2017
2012017
Field-Effect Transistors With Graphene/Metal Heterocontacts
Y Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, DY Peide
IEEE electron device letters 35 (5), 599-601, 2014
1702014
Surface chemistry of black phosphorus under a controlled oxidative environment
W Luo, DY Zemlyanov, CA Milligan, Y Du, L Yang, Y Wu, DY Peide
Nanotechnology 27 (43), 434002, 2016
1562016
Performance Potential and Limit of MoS2 Transistors
X Li, L Yang, M Si, S Li, M Huang, P Ye, Y Wu
Advanced Materials 27 (9), 1547-1552, 2015
1102015
High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)
L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
862014
Performance enhancement of black phosphorus field-effect transistors by chemical doping
Y Du, L Yang, H Zhou, DY Peide
IEEE Electron Device Letters 37 (4), 429-432, 2016
702016
Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
Y Du, L Yang, H Liu, PD Ye
APL Materials 2 (9), 2014
632014
Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance
M Si, C Jiang, CJ Su, YT Tang, L Yang, W Chung, MA Alam, PD Ye
2017 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2017
622017
A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications
M Wang, WJ Luo, YL Wang, LM Yang, W Zhu, P Zhou, JH Yang, XG Gong, ...
2010 Symposium on VLSI Technology, 89-90, 2010
552010
β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
M Si, L Yang, H Zhou, PD Ye
ACS omega 2 (10), 7136-7140, 2017
482017
Reliable passivation of black phosphorus by thin hybrid coating
S Gamage, A Fali, N Aghamiri, L Yang, PD Ye, Y Abate
Nanotechnology 28 (26), 265201, 2017
472017
Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA Nanotubes.
J Choi, H Chen, F Li, L Yang, SS Kim, RR Naik, PD Ye, JH Choi
chemical vapor deposition 13, 15, 2015
392015
10 nm nominal channel length MoS2 FETs with EOT 2.5 nm and 0.52 mA/µm drain current
L Yang, RTP Lee, SSP Rao, W Tsai, PD Ye
2015 73rd Annual Device Research Conference (DRC), 237-238, 2015
362015
Low Reset Current in Stacked Resistive Switching Memory
YL Song, Y Liu, YL Wang, M Wang, XP Tian, LM Yang, YY Lin
IEEE electron device letters 32 (10), 1439-1441, 2011
352011
Linear Scaling of Reset Current Down to 22-nm Node for a Novel RRAM
LM Yang, YL Song, Y Liu, YL Wang, XP Tian, M Wang, YY Lin, R Huang, ...
IEEE electron device letters 33 (1), 89-91, 2011
342011
Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors
X Li, Y Du, M Si, L Yang, S Li, T Li, X Xiong, P Ye, Y Wu
Nanoscale 8 (6), 3572-3578, 2016
312016
Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm
LM Yang, G Qiu, MW Si, AR Charnas, CA Milligan, DY Zemlyanov, ...
2016 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2016
292016
How important is the metal–semiconductor contact for Schottky barrier transistors: a case study on few-layer black phosphorus?
L Yang, A Charnas, G Qiu, YM Lin, CC Lu, W Tsai, Q Paduano, M Snure, ...
ACS omega 2 (8), 4173-4179, 2017
232017
Järjestelmä ei voi suorittaa toimenpidettä nyt. Yritä myöhemmin uudelleen.
Artikkelit 1–20