Single-nanowire solar cells beyond the Shockley–Queisser limit P Krogstrup, HI Jørgensen, M Heiss, O Demichel, JV Holm, M Aagesen, ...
Nature Photonics 7 (4), 306-310, 2013
744 2013 Large-Area Epitaxial Monolayer MoS2 D Dumcenco, D Ovchinnikov, K Marinov, P Lazic, M Gibertini, N Marzari, ...
ACS nano 9 (4), 4611-4620, 2015
589 2015 Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
498 2009 Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy C Colombo, D Spirkoska, M Frimmer, G Abstreiter, AF i Morral
Physical Review B 77 (15), 155326, 2008
448 2008 Light generation and harvesting in a van der Waals heterostructure O Lopez-Sanchez, E Alarcon Llado, V Koman, A Fontcuberta i Morral, ...
Acs Nano 8 (3), 3042-3048, 2014
349 2014 Self-assembled quantum dots in a nanowire system for quantum photonics M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’regan, ...
Nature materials 12 (5), 439-444, 2013
346 2013 Gallium arsenide C Colombo, M Heiβ, M Grätzel, A Fontcuberta i Morral
Applied Physics Letters 94 (17), 173108, 2009
331 2009 Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires A Fontcuberta i Morral, C Colombo, G Abstreiter, J Arbiol, JR Morante
Applied Physics Letters 92 (6), 063112, 2008
299 2008 Impact of surfaces on the optical properties of GaAs nanowires O Demichel, M Heiss, J Bleuse, H Mariette, A Fontcuberta i Morral
Applied Physics Letters 97 (20), 201907, 2010
249 2010 Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules, and strain effects I Zardo, S Conesa-Boj, F Peiro, JR Morante, J Arbiol, E Uccelli, ...
Physical review B 80 (24), 245324, 2009
237 2009 Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B 83 (4), 045303, 2011
229 2011 Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements AF i Morral, PR i Cabarrocas, C Clerc
Physical Review B 69 (12), 125307, 2004
182 2004 Multi-junction solar cells and methods of making same using layer transfer and bonding techniques HA Atwater Jr, J Zahler, AF i Morral, S Olson
US Patent 7,846,759, 2010
179 2010 Synthesis of silicon nanowires with wurtzite crystalline structure by using standard chemical vapor deposition A Fontcuberta i Morral, J Arbiol, JD Prades, A Cirera, JR Morante
Advanced Materials 19 (10), 1347-1351, 2007
178 2007 GaInP/GaAs/Si triple junction solar cell enabled by wafer bonding and layer transfer J Zahler, H Atwater, AF i Morral
US Patent App. 11/193,637, 2006
178 2006 Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour–solid–solid mechanism J Arbiol, B Kalache, PR i Cabarrocas, JR Morante, AF i Morral
Nanotechnology 18 (30), 305606, 2007
176 2007 Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis M De La Mata, C Magen, J Gazquez, MIB Utama, M Heiss, S Lopatin, ...
Nano letters 12 (5), 2579-2586, 2012
166 2012 Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells JM Zahler, AF i Morral, CG Ahn, HA Atwater, MW Wanlass, C Chu, PA Iles
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists …, 2002
164 2002 Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates E Uccelli, J Arbiol, C Magen, P Krogstrup, E Russo-Averchi, M Heiss, ...
Nano letters 11 (9), 3827-3832, 2011
152 2011 Prismatic quantum heterostructures synthesized on molecular‐beam epitaxy GaAs nanowires A Fontcuberta i Morral, D Spirkoska, J Arbiol, M Heigoldt, JR Morante, ...
small 4 (7), 899-903, 2008
152 2008 
Jordi ArbiolICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BISTVahvistettu sähköpostiosoite verkkotunnuksessa icrea.cat
