| Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD F Alema, B Hertog, A Osinsky, P Mukhopadhyay, M Toporkov, ... Journal of Crystal Growth 475, 77-82, 2017 | 128 | 2017 |
| Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film F Alema, B Hertog, O Ledyaev, D Volovik, G Thoma, R Miller, A Osinsky, ... Physica status solidi (a) 214 (5), 1600688, 2017 | 114 | 2017 |
| Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film F Alema, B Hertog, P Mukhopadhyay, Y Zhang, A Mauze, A Osinsky, ... APL Materials 7 (2), 2019 | 72 | 2019 |
| Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ... MRS Proceedings 33 (2), 81-87, 2014 | 45 | 2014 |
| High-resolution X-ray diffraction analysis of AlxGa12xN/InxGa12xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations SK Jana, P Mukhopadhyay, S Ghosh, S Kabi, A Bag, R Kumar, D Biswas Journal of Applied Physics 115 (17), 174507, 2014 | 40 | 2014 |
| Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: tilt dependence on cross-hatch irregularities R Kumar, A Bag, P Mukhopadhyay, S Das, D Biswas Applied Surface Science 357, 922-930, 2015 | 36 | 2015 |
| High responsivity tin gallium oxide Schottky ultraviolet photodetectors P Mukhopadhyay, WV Schoenfeld Journal of Vacuum Science & Technology A 38 (1), 2020 | 34 | 2020 |
| Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film F Alema, B Hertog, AV Osinsky, P Mukhopadhyay, M Toporkov, ... Oxide-based Materials and Devices VIII 10105, 242-249, 2017 | 34 | 2017 |
| Tuning the responsivity of monoclinic solar-blind photodetectors grown by metal organic chemical vapor deposition I Hatipoglu, P Mukhopadhyay, F Alema, TS Sakthivel, S Seal, A Osinsky, ... Journal of Physics D: Applied Physics 53 (45), 454001, 2020 | 31 | 2020 |
| Tin gallium oxide solar-blind photodetectors on sapphire grown by molecular beam epitaxy P Mukhopadhyay, W Schoenfeld Applied Optics 58 (13), D22, 2019 | 31 | 2019 |
| Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0. 3Ga0. 7N/GaN heterostructure: strain and interface capacitance analysis SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ... AIP Advances 5 (4), 2015 | 31 | 2015 |
| Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ... IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018 | 30 | 2018 |
| 2DEG modulation in double quantum well enhancement mode nitride HEMT A Bag, P Das, R Kumar, P Mukhopadhyay, S Majumdar, S Kabi, D Biswas Physica E: Low-dimensional Systems and Nanostructures 74, 59-64, 2015 | 19 | 2015 |
| Comparative DC characteristic analysis of AlGaN/GaN HEMTs grown on Si (111) and sapphire substrates by MBE P Mukhopadhyay, A Bag, U Gomes, U Banerjee, S Ghosh, S Kabi, ... Journal of electronic materials 43 (4), 1263-1270, 2014 | 19 | 2014 |
| Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si (111) on buffer growth conditions by MBE P Mukhopadhyay, S Chowdhury, A Wowchak, A Dabiran, P Chow, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 18 | 2013 |
| Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer MK Mahata, S Ghosh, SK Jana, A Chakraborty, A Bag, P Mukhopadhyay, ... AIP ADVANCES 4, 117120, 2014 | 17 | 2014 |
| Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ... Applied Physics Letters 105 (7), 2014 | 14 | 2014 |
| Epitaxial growth of Co3O4 thin films using Co (dpm) 3 by MOCVD F Alema, A Osinsky, P Mukhopadhyay, WV Schoenfeld Journal of Crystal Growth 525, 125207, 2019 | 11 | 2019 |
| A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (1 0 0) P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ... Journal of Crystal Growth 418, 138-144, 2015 | 11 | 2015 |
| Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon P Mukhopadhyay, U Banerjee, A Bag, S Ghosh, D Biswas Solid-State Electronics 104, 101-108, 2015 | 11 | 2015 |
Ankush BagIndian Institute of Technology GuwahatiVerified email at iitg.ac.in
