| A highly CMOS compatible hafnia-based ferroelectric diode Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ... Nature communications 11 (1), 1391, 2020 | 152 | 2020 |
| Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu, X Zhang, J Yang, Z Wang, H Lv, ... Advanced Materials 32 (47), 2003018, 2020 | 121 | 2020 |
| Fabrication of heterostructured p-CuO/n-SnO2 core-shell nanowires for enhanced sensitive and selective formaldehyde detection LY Zhu, K Yuan, JG Yang, HP Ma, T Wang, XM Ji, JJ Feng, A Devi, HL Lu Sensors and Actuators B: Chemical 290, 233-241, 2019 | 110 | 2019 |
| Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition X Li, HL Lu, HP Ma, JG Yang, JX Chen, W Huang, Q Guo, JJ Feng, ... Current Applied Physics 19 (2), 72-81, 2019 | 66 | 2019 |
| Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice HP Ma, JH Yang, JG Yang, LY Zhu, W Huang, GJ Yuan, JJ Feng, TC Jen, ... Nanomaterials 9 (1), 55, 2019 | 65 | 2019 |
| A 0.13 µm 8 Mb Logic-Based CuSiO ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction X Xue, W Jian, J Yang, F Xiao, G Chen, S Xu, Y Xie, Y Lin, R Huang, ... IEEE Journal of solid-state circuits 48 (5), 1315-1322, 2013 | 52 | 2013 |
| A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction XY Xue, WX Jian, JG Yang, FJ Xiao, G Chen, XL Xu, YF Xie, YY Lin, ... 2012 Symposium on VLSI Circuits (VLSIC), 42-43, 2012 | 44 | 2012 |
| Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory X Li, JG Yang, HP Ma, YH Liu, ZG Ji, W Huang, X Ou, DW Zhang, HL Lu ACS applied materials & interfaces 12 (27), 30538-30547, 2020 | 40 | 2020 |
| Investigation of the optical and electrical properties of ZnO/Cu/ZnO multilayers grown by atomic layer deposition T Wang, HP Ma, JG Yang, JT Zhu, H Zhang, J Feng, SJ Ding, HL Lu, ... Journal of Alloys and Compounds 744, 381-385, 2018 | 37 | 2018 |
| 24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference J Yang, X Xue, X Xu, Q Wang, H Jiang, J Yu, D Dong, F Zhang, H Lv, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 336-338, 2021 | 32 | 2021 |
| Precise control of the microstructural, optical, and electrical properties of ultrathin Ga 2 O 3 film through nanomixing with few atom-thick SiO 2 interlayer via plasma … HP Ma, HL Lu, T Wang, JG Yang, X Li, JX Chen, JJ Tao, JT Zhu, Q Guo, ... Journal of Materials Chemistry C 6 (46), 12518-12528, 2018 | 26 | 2018 |
| A small area and low power true random number generator using write speed variation of oxidebased RRAM for IoT security application J Yang, Y Lin, Y Fu, X Xue, BA Chen 2017 IEEE international symposium on circuits and systems (ISCAS), 1-4, 2017 | 23 | 2017 |
| A logic resistive memory chip for embedded key storage with physical security Y Xie, X Xue, J Yang, Y Lin, Q Zou, R Huang, J Wu IEEE Transactions on Circuits and Systems II: Express Briefs 63 (4), 336-340, 2015 | 23 | 2015 |
| A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneaking Current Suppression and Compensation Techniques J Yang, X Xue, X Xu, H Lv, F Zhang, X Zeng, MF Chang, M Liu 2020 IEEE Symposium on VLSI Circuits, 1-2, 2020 | 17 | 2020 |
| High-density 3-D stackable crossbar 2D2R nvTCAM with low-power intelligent search for fast packet forwarding in 5G applications K Zhou, X Xue, J Yang, X Xu, H Lv, M Jing, J Li, X Zeng, M Liu IEEE Journal of Solid-State Circuits 56 (3), 988-1000, 2020 | 16 | 2020 |
| First demonstration of OxRRAM integration on 14nm FinFet platform and scaling potential analysis towards sub-10nm node X Xu, J Yu, T Gong, J Yang, J Yin, Q Luo, J Liu, Z Yu, Q Liu, H Lv, M Liu 2020 IEEE International Electron Devices Meeting (IEDM), 24.3. 1-24.3. 4, 2020 | 15 | 2020 |
| A low cost and high reliability true random number generator based on resistive random access memory J Yang, J Xu, B Wang, X Xue, R Huang, Q Zhou, J Wu, Y Lin 2015 IEEE 11th International Conference on ASIC (ASICON), 1-4, 2015 | 15 | 2015 |
| An ADC-less RRAM-based computing-in-memory macro with binary CNN for efficient edge AI Y Li, J Chen, L Wang, W Zhang, Z Guo, J Wang, Y Han, Z Li, F Wang, ... IEEE Transactions on Circuits and Systems II: Express Briefs, 2023 | 14 | 2023 |
| A 14nm 100Kb 2T1R Transpose RRAM with> 150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast … L Wang, W Ye, J Lai, J Liu, J Yang, X Si, C Huo, C Dou, X Xu, Q Liu, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 14 | 2021 |
| A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for extremely low bit error rate of cryptographic key X Xue, J Yang, Y Zhang, M Wang, H Lv, X Zeng, M Liu 2019 IEEE Asian Solid-State Circuits Conference (A-SSCC), 29-32, 2019 | 14 | 2019 |
Hangbing LvInstitute of Microelectronics, Chinese Academy of SciencesVerified email at ime.ac.cn
