Model for the linear electro-optic reflectance-difference spectrum of GaAs (001) around E 1 and E 1+ Δ 1 A Lastras-Martínez, RE Balderas-Navarro, LF Lastras-Martínez, MA Vidal
Physical Review B 59 (15), 10234, 1999
67 1999 Enhanced optical sensitivity to adsorption due to depolarization of anisotropic surface states LD Sun, M Hohage, P Zeppenfeld, RE Balderas-Navarro, K Hingerl
Physical review letters 90 (10), 106104, 2003
52 2003 Surface-induced d-band anisotropy on Cu (110) LD Sun, M Hohage, P Zeppenfeld, RE Balderas-Navarro, K Hingerl
Surface Science 527 (1-3), L184-L190, 2003
47 2003 Origin and temperature dependence of the surface optical anisotropy on Cu (1 1 0) LD Sun, M Hohage, P Zeppenfeld, RE Balderas-Navarro
Surface science 589 (1-3), 153-163, 2005
36 2005 On the origin of resonance features in reflectance difference data of silicon K Hingerl, RE Balderas-Navarro, A Bonanni, P Tichopadek, WG Schmidt
Applied surface science 175, 769-776, 2001
36 2001 Surface-stress-induced optical bulk anisotropy K Hingerl, RE Balderas-Navarro, W Hilber, A Bonanni, D Stifter
Physical Review B 62 (19), 13048, 2000
33 2000 A spectrometer for the measurement of reflectance‐difference spectra LF Lastras‐Martínez, A Lastras‐Martínez, RE Balderas‐Navarro
Review of scientific instruments 64 (8), 2147-2152, 1993
31 1993 Stress-induced optical anisotropies measured by modulated reflectance LF Lastras-Martínez, RE Balderas-Navarro, A Lastras-Martínez, K Hingerl
Semiconductor science and technology 19 (9), R35, 2004
28 2004 Effect of reconstruction-induced strain on the reflectance difference spectroscopy of GaAs (001) around E 1 and E 1+ Δ 1 transitions LF Lastras-Martínez, JM Flores-Camacho, RE Balderas-Navarro, ...
Physical Review B 75 (23), 235315, 2007
23 2007 Photoreflectance spectroscopy of CdTe(001) around A Lastras-Martınez, RE Balderas-Navarro, P Cantú-Alejandro, ...
Journal of applied physics 86 (4), 2062-2065, 1999
21 1999 Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies LF Lastras-Martínez, JM Flores-Camacho, A Lastras-Martínez, ...
Physical review letters 96 (4), 047402, 2006
19 2006 In situ observation of stress relaxation in CdTe/ZnTe heterostructures by reflectance-difference spectroscopyRE Balderas-Navarro, K Hingerl, A Bonanni, H Sitter, D Stifter
Applied Physics Letters 78 (23), 3615-3617, 2001
19 2001 Strain oscillations probed with light LD Sun, M Hohage, P Zeppenfeld, RE Balderas-Navarro, K Hingerl
physical review letters 96 (1), 016105, 2006
18 2006 Reflectance difference spectroscopy of GaAs (001) under a [110] uniaxial stress LF Lastras-Martínez, M Chavira-Rodríguez, RE Balderas-Navarro, ...
Physical Review B 70 (3), 035306, 2004
18 2004 Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001) LF Lastras-Martínez, R Castro-García, RE Balderas-Navarro, ...
Applied optics 48 (30), 5713-5717, 2009
16 2009 Photoreflectance-difference spectroscopy of GaAs (001) under [110] uniaxial stress: Linear and quadratic electro-optic components LF Lastras-Martínez, M Chavira-Rodríguez, A Lastras-Martínez, ...
Physical Review B 66 (7), 075315, 2002
14 2002 In situ monitoring of the 2D–3D growth-mode transition in In0. 3Ga0. 7As/GaAs (0 0 1) by reflectance-difference spectroscopy CI Medel-Ruiz, A Lastras-Martınez, RE Balderas-Navarro, SL Gallardo, ...
Applied surface science 221 (1-4), 48-52, 2004
13 2004 Linear electro-optic reflectance modulated spectra of GaAs (001) around E1 and E1+ Δ1 A Lastras-Martınez, RE Balderas-Navarro, LF Lastras-Martınez
Thin Solid Films 373 (1-2), 207-210, 2000
12 2000 Strain induced optical anisotropies in zincblende semiconductors LF Lastras‐Martínez, RE Balderas‐Navarro, M Chavira‐Rodríguez, ...
physica status solidi (b) 240 (3), 500-508, 2003
11 2003 Exciton-polariton gap soliton dynamics in moving acoustic square lattices JVT Buller, RE Balderas-Navarro, K Biermann, EA Cerda-Méndez, ...
Physical Review B 94 (12), 125432, 2016
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