James T. Teherani
James T. Teherani
GaN Device Development and Process Integration Engineer, Texas Instruments
Vahvistettu sähköpostiosoite verkkotunnuksessa - Kotisivu
Transferred via contacts as a platform for ideal two-dimensional transistors
Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ...
Nature Electronics 2 (5), 187-194, 2019
Electrical characterization of 2D materials-based field-effect transistors
SB Mitta, MS Choi, A Nipane, F Ali, C Kim, JT Teherani, J Hone, WJ Yoo
2D Materials 8 (1), 012002, 2020
Engineering the electron–hole bilayer tunneling field-effect transistor
S Agarwal, JT Teherani, JL Hoyt, DA Antoniadis, E Yablonovitch
IEEE Transactions on Electron Devices 61 (5), 1599-1606, 2014
Ultrathin Strained-Ge Channel P-MOSFETs With High-K/Metal Gate and Sub-1-nm Equivalent Oxide Thickness
O Hashemi, W Chern, H Lee, JT Teherani, Y Zhu, J Gonsalvez, ...
Electron Device Letters, IEEE 33 (7), 943-945, 2012
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide
MS Choi, A Nipane, BSY Kim, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ...
Nature Electronics 4 (10), 731-739, 2021
Absence of a Band Gap at Metal-Monolayer MoS2 Interface
A Kerelsky, A Nipane, D Edelberg, D Wang, X Zhou, A Dadgar, H Gao, ...
arXiv preprint arXiv:1705.08478, 2017
Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates
JT Teherani, W Chern, DA Antoniadis, JL Hoyt, L Ruiz, CD Poweleit, ...
Physical Review B—Condensed Matter and Materials Physics 85 (20), 205308, 2012
Electrostatics of lateral pn junctions in atomically thin materials
A Nipane, S Jayanti, A Borah, JT Teherani
Journal of Applied Physics 122 (19), 2017
Resonant tunnelling diodes based on twisted black phosphorus homostructures
PK Srivastava, Y Hassan, DJP de Sousa, Y Gebredingle, M Joe, F Ali, ...
Nature Electronics 4 (4), 269-276, 2021
Impact of quantization energy and gate leakage in bilayer tunneling transistors
JT Teherani, S Agarwal, E Yablonovitch, JL Hoyt, DA Antoniadis
IEEE Electron Device Letters 34 (2), 298-300, 2013
In(0.53)Ga(0.47)As/GaAs(0.5)Sb(0.5) Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics
T Yu, JT Teherani, DA Antoniadis, JL Hoyt
IEEE Electron Device Letters 34 (12), 1503-1505, 2013
The device level modulation of carrier transport in a 2D WSe 2 field effect transistor via a plasma treatment
I Moon, S Lee, M Lee, C Kim, D Seol, Y Kim, KH Kim, GY Yeom, ...
Nanoscale 11 (37), 17368-17375, 2019
High-operating-temperature MWIR detector diodes
HF Schaake, MA Kinch, D Chandra, F Aqariden, PK Liao, DF Weirauch, ...
Journal of Electronic Materials 37 (9), 1401-1405, 2008
High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs
W Chern, P Hashemi, JT Teherani, T Yu, Y Dong, G Xia, DA Antoniadis, ...
2012 International Electron Devices Meeting, 16.5. 1-16.5. 4, 2012
Auger generation as an intrinsic limit to tunneling field-effect transistor performance
JT Teherani, S Agarwal, W Chern, PM Solomon, E Yablonovitch, ...
Journal of Applied Physics 120 (8), 2016
Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices
A Nipane, MS Choi, PJ Sebastian, K Yao, A Borah, P Deshmukh, Y Jung, ...
ACS Applied Materials & Interfaces 13 (1), 1930-1942, 2020
Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor
PM Solomon, I Lauer, A Majumdar, JT Teherani, M Luisier, J Cai, ...
Electron Device Letters, IEEE 32 (4), 464-466, 2011
Performance and modeling of the MWIR HgCdTe electron avalanche photodiode
J Beck, R Scritchfield, B Sullivan, J Teherani, CF Wan, M Kinch, M Ohlson, ...
Journal of electronic materials 38 (8), 1579-1592, 2009
Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant
A Borah, A Nipane, MS Choi, J Hone, JT Teherani
ACS Applied Electronic Materials 3 (7), 2941-2947, 2021
Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-к/metal-gate: effects of hydrogen thermal annealing and nanowire shape
P Hashemi, JT Teherani, JL Hoyt
2010 International Electron Devices Meeting, 34.5. 1-34.5. 4, 2010
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Artikkelit 1–20