Gang Qiu
Gang Qiu
Vahvistettu sähköpostiosoite verkkotunnuksessa g.ucla.edu
Nimike
Viittaukset
Viittaukset
Vuosi
Field-effect transistors made from solution-grown two-dimensional tellurene
Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard, ...
Nature Electronics 1 (4), 228-236, 2018
3142018
Steep-slope hysteresis-free negative capacitance MoS 2 transistors
M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ...
Nature nanotechnology 13 (1), 24-28, 2018
2822018
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
2062016
One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport
Y Du, G Qiu, Y Wang, M Si, X Xu, W Wu, PD Ye
Nano Letters, 2017
1732017
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
H Zhou, K Maize, G Qiu, A Shakouri, PD Ye
Applied Physics Letters 111 (9), 092102, 2017
1302017
Tellurene: its physical properties, scalable nanomanufacturing, and device applications
W Wu, G Qiu, Y Wang, R Wang, P Ye
Chemical Society Reviews 47 (19), 7203-7212, 2018
1262018
Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications
J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ...
ACS nano 11 (10), 10222-10229, 2017
1102017
Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure
M Si, PY Liao, G Qiu, Y Duan, PD Ye
Acs Nano 12 (7), 6700-6705, 2018
1032018
A ferroelectric semiconductor field-effect transistor
M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ...
Nature Electronics 2 (12), 580-586, 2019
892019
Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
H Zhou, S Alghmadi, M Si, G Qiu, DY Peide
IEEE Electron Device Letters 37 (11), 1411-1414, 2016
772016
Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5
G Qiu, Y Du, A Charnas, H Zhou, S Jin, Z Luo, DY Zemlyanov, X Xu, ...
Nano letters 16 (12), 7364-7369, 2016
542016
Thermoelectric Performance of 2D Tellurium with Accumulation Contacts
G Qiu, S Huang, M Segovia, PK Venuthurumilli, Y Wang, W Wu, X Xu, ...
Nano Letters 19 (3), 1955–1962, 2019
502019
Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene
G Qiu, Y Wang, Y Nie, Y Zheng, K Cho, W Wu, PD Ye
Nano Letters 18 (9), 5760–5767, 2018
502018
Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS2 for High‐Performance Photodetectors
JK Qin, G Qiu, W He, J Jian, MW Si, YQ Duan, A Charnas, DY Zemlyanov, ...
Advanced Functional Materials 28 (48), 1806254, 2018
302018
Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes
JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang, SQ Zhang, S Huang, ...
Nature Electronics 3 (3), 141-147, 2020
242020
Data-driven and probabilistic learning of the process-structure-property relationship in solution-grown tellurene for optimized nanomanufacturing of high-performance …
Y Wang, RSB Ferreira, R Wang, G Qiu, G Li, Y Qin, DY Peide, A Sabbaghi, ...
Nano Energy 57, 480-491, 2019
232019
Imaging carrier inhomogeneities in ambipolar tellurene field effect transistors
S Berweger, G Qiu, Y Wang, B Pollard, KL Genter, R Tyrrell-Ead, ...
Nano letters 19 (2), 1289-1294, 2019
232019
Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene
G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, DY Peide
Nature Nanotechnology 15 (7), 585-591, 2020
19*2020
Write disturb analyses on half-selected cells of cross-point RRAM arrays
H Li, HY Chen, Z Chen, B Chen, R Liu, G Qiu, P Huang, F Zhang, Z Jiang, ...
2014 IEEE International Reliability Physics Symposium, MY. 3.1-MY. 3.4, 2014
192014
How important is the metal–semiconductor contact for Schottky barrier transistors: a case study on few-layer black phosphorus?
L Yang, A Charnas, G Qiu, YM Lin, CC Lu, W Tsai, Q Paduano, M Snure, ...
ACS omega 2 (8), 4173-4179, 2017
182017
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Artikkelit 1–20