Jin-Ping Ao
Jin-Ping Ao
Verified email at ee.tokushima-u.ac.jp - Homepage
Cited by
Cited by
Light-emitting device having light-emitting elements
S Sakai, J Ao, Y Ono
US Patent 7,417,259, 2008
1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
T Wang, YH Liu, YB Lee, JP Ao, J Bai, S Sakai
Applied Physics Letters 81 (14), 2508-2510, 2002
Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes
T Wang, YH Liu, YB Lee, Y Izumi, JP Ao, J Bai, HD Li, S Sakai
Journal of crystal growth 235 (1-4), 177-182, 2002
Copper gate AlGaN/GaN HEMT with low gate leakage current
JP Ao, D Kikuta, N Kubota, Y Naoi, Y Ohno
IEEE Electron Device Letters 24 (8), 500-502, 2003
Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst
Y Zhang, Y Li, D Ni, Z Chen, X Wang, Y Bu, JP Ao
Advanced Functional Materials 29 (32), 1902101, 2019
A review on photoelectrochemical cathodic protection semiconductor thin films for metals
Y Bu, JP Ao
Green Energy & Environment 2 (4), 331-362, 2017
1-N-arylpyrazole derivatives in prevention of arthropod-borne and mosquito-borne diseases
M Soll, A Boeckh
US Patent 7,262,214, 2007
Monolithic Blue LED Series Arrays for High‐Voltage AC Operation
JP Ao, H Sato, T Mizobuchi, K Morioka, S Kawano, Y Muramoto, YB Lee, ...
physica status solidi (a) 194 (2), 376-379, 2002
High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer
YB Lee, T Wang, YH Liu, JP Ao, Y Izumi, Y Lacroix, HD Li, J Bai, Y Naoi, ...
Japanese journal of applied physics 41 (7R), 4450, 2002
GaN Schottky diodes for microwave power rectification
K Takahashi, JP Ao, Y Ikawa, CY Hu, H Kawai, N Shinohara, N Niwa, ...
Japanese Journal of Applied Physics 48 (4S), 04C095, 2009
Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet
Y Bu, J Tian, Z Chen, Q Zhang, W Li, FH Tian, JP Ao
Advanced Materials Interfaces 4 (10), 1601235, 2017
Photogenerated-carrier separation along edge dislocation of WO 3 single-crystal nanoflower photoanode
Y Bu, J Ren, H Zhang, D Yang, Z Chen, JP Ao
Journal of Materials Chemistry A 6 (18), 8604-8611, 2018
Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure
JP Ao, Y Naoi, Y Ohno
Vacuum 87, 150-154, 2013
Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors
X Liu, J Wu, W Yu, L Chen, Z Huang, H Jiang, J He, Q Liu, Y Lu, D Zhu, ...
Advanced Functional Materials 27 (13), 1606469, 2017
Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique
Y Yao, Z He, F Yang, Z Shen, J Zhang, Y Ni, J Li, S Wang, G Zhou, ...
Applied Physics Express 7 (1), 016502, 2013
1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material
X Liu, Q Liu, C Li, J Wang, W Yu, K Xu, JP Ao
Japanese Journal of Applied Physics 56 (2), 026501, 2017
GaN Schottky barrier diode with TiN electrode for microwave rectification
L Li, A Kishi, Q Liu, Y Itai, R Fujihara, Y Ohno, JP Ao
IEEE Journal of the Electron Devices Society 2 (6), 168-173, 2014
Fabrication of FTO–BiVO 4–W–WO 3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism
R Wang, T Xie, T Zhang, T Pu, Y Bu, JP Ao
Journal of Materials Chemistry A 6 (27), 12956-12961, 2018
New application of microwave power transmission for wireless power distribution system in buildings
N Shinohara, Y Miyata, T Mitani, N Niwa, K Takagi, K Hamamoto, ...
2008 Asia-Pacific Microwave Conference, 1-4, 2008
Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure
Q Wang, Y Jiang, T Miyashita, S Motoyama, L Li, D Wang, Y Ohno, JP Ao
Solid-state electronics 99, 59-64, 2014
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