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Jin-Ping Ao
Jin-Ping Ao
Verified email at ee.tokushima-u.ac.jp - Homepage
Title
Cited by
Cited by
Year
Light-emitting device having light-emitting elements
S Sakai, JP Ao, Y Ono
US Patent 7,417,259, 2008
209*2008
A review on photoelectrochemical cathodic protection semiconductor thin films for metals
Y Bu, JP Ao
Green Energy & Environment 2 (4), 331-362, 2017
1482017
1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
T Wang, YH Liu, YB Lee, JP Ao, J Bai, S Sakai
Applied Physics Letters 81 (14), 2508-2510, 2002
1452002
Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst
Y Zhang, Y Li, D Ni, Z Chen, X Wang, Y Bu, JP Ao
Advanced Functional Materials 29 (32), 1902101, 2019
1432019
Copper gate AlGaN/GaN HEMT with low gate leakage current
JP Ao, D Kikuta, N Kubota, Y Naoi, Y Ohno
IEEE Electron Device Letters 24 (8), 500-502, 2003
952003
Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes
T Wang, YH Liu, YB Lee, Y Izumi, JP Ao, J Bai, HD Li, S Sakai
Journal of crystal growth 235 (1-4), 177-182, 2002
952002
Monolithic Blue LED Series Arrays for High‐Voltage AC Operation
JP Ao, H Sato, T Mizobuchi, K Morioka, S Kawano, Y Muramoto, YB Lee, ...
physica status solidi (a) 194 (2), 376-379, 2002
632002
Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4
Y Li, Y Bu, F Jiang, X Dai, JP Ao
Biosensors and Bioelectronics 150, 111903, 2020
602020
Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors
X Liu, J Wu, W Yu, L Chen, Z Huang, H Jiang, J He, Q Liu, Y Lu, D Zhu, ...
Advanced Functional Materials 27 (13), 1606469, 2017
582017
Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet
Y Bu, J Tian, Z Chen, Q Zhang, W Li, FH Tian, JP Ao
Advanced Materials Interfaces 4 (10), 1601235, 2017
572017
High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer
YB Lee, T Wang, YH Liu, JP Ao, Y Izumi, Y Lacroix, HD Li, J Bai, Y Naoi, ...
Japanese journal of applied physics 41 (7R), 4450, 2002
572002
Single-sites Rh-phosphide modified carbon nitride photocatalyst for boosting hydrogen evolution under visible light
Z Chen, Y Bu, L Wang, X Wang, JP Ao
Applied Catalysis B: Environmental 274, 119117, 2020
562020
GaN Schottky diodes for microwave power rectification
K Takahashi, JP Ao, Y Ikawa, CY Hu, H Kawai, N Shinohara, N Niwa, ...
Japanese Journal of Applied Physics 48 (4S), 04C095, 2009
522009
Photogenerated-carrier separation along edge dislocation of WO 3 single-crystal nanoflower photoanode
Y Bu, J Ren, H Zhang, D Yang, Z Chen, JP Ao
Journal of Materials Chemistry A 6 (18), 8604-8611, 2018
512018
1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material
X Liu, Q Liu, C Li, J Wang, W Yu, K Xu, JP Ao
Japanese Journal of Applied Physics 56 (2), 026501, 2017
512017
GaN Schottky barrier diode with TiN electrode for microwave rectification
L Li, A Kishi, Q Liu, Y Itai, R Fujihara, Y Ohno, JP Ao
IEEE Journal of the Electron Devices Society 2 (6), 168-173, 2014
502014
Study of the photoelectrochemical cathodic protection mechanism for steel based on the SrTiO3-TiO2 composite
Y Bu, Z Chen, J Ao, J Hou, M Sun
Journal of Alloys and Compounds 731, 1214-1224, 2018
462018
Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation
L Li, Z Liu, L Wang, Y Liu, JP Ao
Materials Science in Semiconductor Processing 76, 61-64, 2018
422018
Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure
JP Ao, Y Naoi, Y Ohno
Vacuum 87, 150-154, 2013
422013
Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique
Y Yao, Z He, F Yang, Z Shen, J Zhang, Y Ni, J Li, S Wang, G Zhou, ...
Applied Physics Express 7 (1), 016502, 2013
402013
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