| Remote oxygen scavenging of the interfacial oxide layer in ferroelectric hafnium–zirconium oxide-based metal–oxide–semiconductor structures N Tasneem, H Kashyap, K Chae, C Park, P Lee, SF Lombardo, N Afroze, ... ACS Applied Materials & Interfaces 14 (38), 43897-43906, 2022 | 11 | 2022 |
| Machine learning assisted statistical variation analysis of ferroelectric transistors: From experimental metrology to predictive modeling G Choe, PV Ravindran, A Lu, J Hur, M Lederer, A Reck, S Lombardo, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 11 | 2022 |
| A complete modeling and analysis of solar system (cell/module/array) based on MATLAB ANR Ahmed, K Nowaz, J Tasnim, N Afroze 2015 International Conference on Electrical & Electronic Engineering (ICEEE …, 2015 | 11 | 2015 |
| Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 9 | 2023 |
| EEG band separation using multilayer perceptron for efficient feature extraction and perfect BCI paradigm MSH Sunny, N Afroze, E Hossain 2020 Emerging Technology in Computing, Communication and Electronics (ETCCE …, 2020 | 5 | 2020 |
| Efficient PV array modelling by analyzing PV system (cell/module/array) based on MATLAB ANR Ahmed, K Nowaz, J Tasnim, N Afroze 2015 2nd International Conference on Electrical Information and …, 2015 | 3 | 2015 |
| Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ... 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | 2 | 2024 |
| Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation D Das, L Fernandes, PV Ravindran, T Song, C Park, N Afroze, M Tian, ... 2024 IEEE International Memory Workshop (IMW), 1-4, 2024 | 1 | 2024 |
| Understanding the nonlinear behavior of EEG with advanced machine learning in artifact elimination MSH Sunny, S Hossain, N Afroze, MK Hasan, E Hossain, MH Rahman Biomedical Physics & Engineering Express 8 (1), 015017, 2021 | 1 | 2021 |
| Performance of Short Channel Junctionless Cylindrical Surrounding Gate Si-and III-V-Based MOSFETs: A Comparative Study SI Chowdhury, N Afroze, MM Islam, MR Islam 2019 4th International Conference on Electrical Information and …, 2019 | 1 | 2019 |
| Material choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications L Fernandes, PV Ravindran, T Song, D Das, C Park, N Afroze, M Tian, ... IEEE Electron Device Letters, 2024 | | 2024 |
| Plasma-Enhanced Atomic Layer Deposition Based Ferroelectric Field-Effect Transistors C Park, PV Ravindran, D Das, PG Ravikumar, C Zhang, N Afroze, ... IEEE Journal of the Electron Devices Society, 2024 | | 2024 |
| Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions PG Ravikumar, PV Ravindran, KA Aabrar, T Song, SG Kirtania, D Das, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2024 | | 2024 |
| Smoothing Disruption Across the Stack: Tales of Memory, Heterogeneity, & Compilers M Niemier, Z Enciso, M Sharifi, XS Hu, I O'Connor, A Graening, R Sharma, ... 2024 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-10, 2024 | | 2024 |
| Interfacial Oxide Layer Scavenging in Ferroelectric HfZrO-Based MOS Structures With Ge Channel for Reduced Write Voltages C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
