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Nashrah Afroze
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Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications
D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
272023
Remote oxygen scavenging of the interfacial oxide layer in ferroelectric hafnium–zirconium oxide-based metal–oxide–semiconductor structures
N Tasneem, H Kashyap, K Chae, C Park, P Lee, SF Lombardo, N Afroze, ...
ACS Applied Materials & Interfaces 14 (38), 43897-43906, 2022
172022
Machine learning assisted statistical variation analysis of ferroelectric transistors: From experimental metrology to predictive modeling
G Choe, PV Ravindran, A Lu, J Hur, M Lederer, A Reck, S Lombardo, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
152022
A complete modeling and analysis of solar system (cell/module/array) based on MATLAB
ANR Ahmed, K Nowaz, J Tasnim, N Afroze
2015 International Conference on Electrical & Electronic Engineering (ICEEE …, 2015
112015
Material choices for tunnel dielectric layer and gate blocking layer for ferroelectric NAND applications
L Fernandes, PV Ravindran, T Song, D Das, C Park, N Afroze, M Tian, ...
IEEE Electron Device Letters, 2024
82024
Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications
D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ...
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
52024
EEG band separation using multilayer perceptron for efficient feature extraction and perfect BCI paradigm
MSH Sunny, N Afroze, E Hossain
2020 Emerging Technology in Computing, Communication and Electronics (ETCCE …, 2020
52020
Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation
D Das, L Fernandes, PV Ravindran, T Song, C Park, N Afroze, M Tian, ...
2024 IEEE International Memory Workshop (IMW), 1-4, 2024
32024
Efficient PV array modelling by analyzing PV system (cell/module/array) based on MATLAB
ANR Ahmed, K Nowaz, J Tasnim, N Afroze
2015 2nd International Conference on Electrical Information and …, 2015
32015
Nearly Barrierless Polarization Switching Mechanisms in ZrO2 Having Perpendicular In-Plane Domain Walls
M Noor, M Bergschneider, J Kim, N Afroze, AI Khan, SC Chang, UE Avci, ...
ACS Applied Materials & Interfaces 16 (45), 62282-62291, 2024
12024
Disturb and its mitigation in Ferroelectric Field-Effect Transistors with Large Memory Window for NAND Flash Applications
P Venkatesan, C Park, T Song, L Fernandes, D Das, N Afroze, ...
IEEE Electron Device Letters, 2024
12024
Plasma-Enhanced Atomic Layer Deposition Based Ferroelectric Field-Effect Transistors
C Park, PV Ravindran, D Das, PG Ravikumar, C Zhang, N Afroze, ...
IEEE Journal of the Electron Devices Society, 2024
12024
Understanding the nonlinear behavior of EEG with advanced machine learning in artifact elimination
MSH Sunny, S Hossain, N Afroze, MK Hasan, E Hossain, MH Rahman
Biomedical Physics & Engineering Express 8 (1), 015017, 2021
12021
Performance of Short Channel Junctionless Cylindrical Surrounding Gate Si-and III-V-Based MOSFETs: A Comparative Study
SI Chowdhury, N Afroze, MM Islam, MR Islam
2019 4th International Conference on Electrical Information and …, 2019
12019
2024 Index IEEE Electron Device Letters Vol. 45
R Abdolvand, M Adnaan, VV Afanas' ev, MM Afandi, N Afroze, FL Aguirre, ...
IEEE Electron Device Letters 45 (12), 2024
2024
Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions
PG Ravikumar, PV Ravindran, KA Aabrar, T Song, SG Kirtania, D Das, ...
2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2024
2024
Smoothing Disruption Across the Stack: Tales of Memory, Heterogeneity, & Compilers
M Niemier, Z Enciso, M Sharifi, XS Hu, I O'Connor, A Graening, R Sharma, ...
2024 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-10, 2024
2024
Interfacial Oxide Layer Scavenging in Ferroelectric HfZrO-Based MOS Structures With Ge Channel for Reduced Write Voltages
C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ...
IEEE Transactions on Electron Devices, 2023
2023
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