| Enhancement of Photovoltaic Response in Multilayer MoS2 Induced by Plasma Doping S Wi, H Kim, M Chen, H Nam, LJ Guo, E Meyhofer, X Liang ACS nano 8 (5), 5270-5281, 2014 | 438 | 2014 |
| Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping M Chen, H Nam, S Wi, L Ji, X Ren, L Bian, S Lu, X Liang Applied Physics Letters 103 (14), 2013 | 250 | 2013 |
| Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors M Chen, H Nam, S Wi, G Priessnitz, IM Gunawan, X Liang Acs Nano 8 (4), 4023-4032, 2014 | 166 | 2014 |
| MoS2 Transistors Fabricated via Plasma-Assisted Nanoprinting of Few-Layer MoS2 Flakes into Large-Area Arrays H Nam, S Wi, H Rokni, M Chen, G Priessnitz, W Lu, X Liang ACS nano 7 (7), 5870-5881, 2013 | 138 | 2013 |
| Multiple MoS2 Transistors for Sensing Molecule Interaction Kinetics H Nam, BR Oh, P Chen, M Chen, S Wi, W Wan, K Kurabayashi, X Liang Scientific reports 5 (1), 10546, 2015 | 83 | 2015 |
| Fabrication and comparison of MoS2 and WSe2 field-effect transistor biosensors H Nam, BR Oh, M Chen, S Wi, D Li, K Kurabayashi, X Liang Journal of Vacuum Science & Technology B 33 (6), 2015 | 65 | 2015 |
| Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays M Chen, H Nam, H Rokni, S Wi, JS Yoon, P Chen, K Kurabayashi, W Lu, ... ACS nano 9 (9), 8773-8785, 2015 | 58 | 2015 |
| Two different device physics principles for operating MoS2 transistor biosensors with femtomolar-level detection limits H Nam, BR Oh, P Chen, JS Yoon, S Wi, M Chen, K Kurabayashi, X Liang Applied Physics Letters 107 (1), 2015 | 58 | 2015 |
| Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors M Chen, Y Wang, N Shepherd, C Huard, J Zhou, LJ Guo, W Lu, X Liang ACS nano 11 (1), 1091-1102, 2017 | 48 | 2017 |
| High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS2-metal heterostructures S Wi, M Chen, H Nam, AC Liu, E Meyhofer, X Liang Applied Physics Letters 104 (23), 2014 | 45 | 2014 |
| Effects of MoS2 thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors M Chen, S Wi, H Nam, G Priessnitz, X Liang Journal of Vacuum Science & Technology B 32 (6), 2014 | 39 | 2014 |
| Photovoltaic response in pristine WSe2 layers modulated by metal-induced surface-charge-transfer doping S Wi, M Chen, D Li, H Nam, E Meyhofer, X Liang Applied Physics Letters 107 (6), 2015 | 37 | 2015 |
| Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide M Chen, H Rokni, W Lu, X Liang Microsystems & Nanoengineering 3 (1), 1-8, 2017 | 17 | 2017 |
| Nanoimprint-assisted shear exfoliation plus transfer printing for producing transition metal dichalcogenide heterostructures D Li, S Wi, M Chen, B Ryu, X Liang Journal of Vacuum Science & Technology B 34 (6), 2016 | 16 | 2016 |
| Plasma-assisted techniques for fabricating semiconductor devices X Liang, H Nam, S Wi, M Chen US Patent 9,373,742, 2016 | 12 | 2016 |
| Plasma-assisted printing and doping processes for manufacturing few-layer MoS2-based electronic and optoelectronic devices X Liang, H Nam, S Wi, M Chen 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014 …, 2014 | 3 | 2014 |
| Field effect transistor memory device X Liang, H Nam, S Wi, M Chen US Patent 9,960,175, 2018 | | 2018 |
| Nanofluidic/nanoelectronic study on solvent-processed nanoscale organic transistors D Li, B Ryu, Q Cui, M Chen, L Jay Guo, B Ma, X Liang Journal of Vacuum Science & Technology B 35 (6), 2017 | | 2017 |
| Multi-bit memories fabricated through mechanical and plasma induced deformation of layered semiconductors M Chen, X Liang 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 705-706, 2017 | | 2017 |
| Advanced Nanofabrication Technologies for Processing Layered Semiconductors and Device Applications M Chen | | 2017 |
