| P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ... IEEE Electron Device Letters 40 (7), 1036-1039, 2019 | 109 | 2019 |
| AlN metal–semiconductor field-effect transistors using Si-ion implantation H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ... Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018 | 55 | 2018 |
| Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios IEEE Electron Device Letters 40 (8), 1245-1248, 2019 | 36 | 2019 |
| MOVPE growth of nitrogen-and aluminum-polar AlN on 4H-SiC J Lemettinen, H Okumura, I Kim, M Rudzinski, J Grzonka, T Palacios, ... Journal of Crystal Growth 487, 50-56, 2018 | 35 | 2018 |
| MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality J Lemettinen, H Okumura, I Kim, C Kauppinen, T Palacios, S Suihkonen Journal of Crystal Growth 487, 12-16, 2018 | 23 | 2018 |
| N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications J Lemettinen, H Okumura, T Palacios, S Suihkonen Applied Physics Express 11 (10), 101002, 2018 | 20 | 2018 |
| Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys H Jussila, KM Yu, J Kujala, F Tuomisto, S Nagarajan, J Lemettinen, ... Journal of Physics D: Applied Physics 47 (7), 075106, 2014 | 19 | 2014 |
| Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ... Applied Physics Letters 115 (6), 2019 | 18 | 2019 |
| Two-Photon Absorption in Intermediate-Band Solar Cells H Jussila, P Kivisaari, J Lemettinen, T Tanaka, M Sopanen Physical Review Applied 3 (5), 054007, 2015 | 18 | 2015 |
| NbN-gated GaN transistor technology for applications in quantum computing systems Q Xie, N Chowdhury, A Zubair, MS Lozano, J Lemettinen, M Colangelo, ... 2021 symposium on VLSI technology, 1-2, 2021 | 16 | 2021 |
| Strain-compensated GaPN/GaP heterostructure on (0 0 1) silicon substrates for intermediate band solar cells S Nagarajan, H Jussila, J Lemettinen, K Banerjee, M Sopanen, ... Journal of Physics D: Applied Physics 46 (16), 165103, 2013 | 15 | 2013 |
| A highly sensitive and robust GaN ultraviolet photodetector fabricated on 150-mm Si (111) wafer RS Pokharia, R Sarkar, S Singh, S Deb, S Suihkonen, J Lemettinen, ... IEEE Transactions on Electron Devices 68 (6), 2796-2803, 2021 | 11 | 2021 |
| MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain J Lemettinen, C Kauppinen, M Rudzinski, A Haapalinna, TO Tuomi, ... Semiconductor Science and Technology 32 (4), 045003, 2017 | 11 | 2017 |
| Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K R Sarkar, BB Upadhyay, S Bhunia, RS Pokharia, D Nag, S Surapaneni, ... IEEE Transactions on Electron Devices 68 (6), 2653-2660, 2021 | 9 | 2021 |
| In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres M Broas, J Lemettinen, T Sajavaara, M Tilli, V Vuorinen, S Suihkonen, ... Thin Solid Films 682, 147-155, 2019 | 5 | 2019 |
| Site-specific growth of oriented ZnO nanocrystal arrays R Bai, DK Pandya, S Chaudhary, V Dhaka, V Khayrudinov, J Lemettinen, ... Beilstein Journal of Nanotechnology 10 (1), 274-280, 2019 | 3 | 2019 |
| Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si (111) P Pal, A Kaur, S Suihkonen, J Lemettinen, A Laha, S Dhar, S Mahapatra IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si (111) P Pal, B Bhardwaj, R Dahiya, S Suihkonen, J Lemettinen, A Laha, ... 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-3, 2022 | | 2022 |
| Materials and technology issues for the next generation of power electronic devices A Zubair, J Niroula, N Chowdhury, Y Zhang, J Lemettinen, T Palacios 2020 Device Research Conference (DRC), 1-2, 2020 | | 2020 |
| Improvements to epitaxial III-N field-effect transistor technology J Lemettinen Aalto University, 2020 | | 2020 |
