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Daniel M. Fleetwood
Daniel M. Fleetwood
Professor of Electrical Engineering, Vanderbilt University
Vahvistettu sähköpostiosoite verkkotunnuksessa vanderbilt.edu - Kotisivu
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Viittaukset
Vuosi
Radiation effects in MOS oxides
JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ...
IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008
9832008
Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices
DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ...
Journal of Applied Physics 73 (10), 5058-5074, 1993
6071993
'Border traps' in MOS devices
DM Fleetwood
IEEE transactions on nuclear science 39 (2), 269-271, 1992
4791992
Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices
DM Fleetwood
IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013
3882013
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
3721994
Physical model for enhanced interface-trap formation at low dose rates
SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ...
IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002
2932002
1/f noise and radiation effects in MOS devices
DM Fleetwood, TL Meisenheimer, JH Scofield
IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994
2621994
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices
MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes
IEEE transactions on nuclear science 38 (6), 1187-1194, 1991
2601991
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
DM Fleetwood, PS Winokur, JR Schwank
IEEE Transactions on Nuclear Science 35 (6), 1497-1505, 1988
2581988
Defect generation by hydrogen at the Si-SiO 2 interface
SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506, 2001
2412001
Charge separation for bipolar transistors
SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE transactions on nuclear science 40 (6), 1276-1285, 1993
2351993
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous
ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 89 (28), 285505, 2002
2322002
An overview of high-temperature electronic device technologies and potential applications
PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian
IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994
2321994
ELDRS in bipolar linear circuits: A review
RL Pease, RD Schrimpf, DM Fleetwood
2008 European Conference on Radiation and Its Effects on Components and …, 2008
2302008
Border traps: Issues for MOS radiation response and long-term reliability
DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ...
Microelectronics Reliability 35 (3), 403-428, 1995
2251995
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002
2072002
1/f noise and defects in microelectronic materials and devices
DM Fleetwood
IEEE Transactions on Nuclear Science 62 (4), 1462-1486, 2015
2032015
Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors
DM Fleetwood, JH Scofield
Physical review letters 64 (5), 579, 1990
2021990
Non-volatile memory device based on mobile protons in SiO2 thin films
K Vanheusden, WL Warren, RAB Devine, DM Fleetwood, JR Schwank, ...
Nature 386 (6625), 587-589, 1997
2001997
Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling
DM Fleetwood
IEEE Transactions on Nuclear Science 65 (8), 1465-1481, 2017
1982017
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