Hongen Xie
Title
Cited by
Cited by
Year
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
Z Lochner, TT Kao, YS Liu, XH Li, MM Satter, SC Shen, PD Yoder, ...
Applied Physics Letters 102 (10), 101110, 2013
822013
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, PD Yoder, RD Dupuis, ...
Applied Physics Letters 105 (14), 141106, 2014
792014
Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate
XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ...
Applied Physics Letters 106 (4), 041115, 2015
562015
Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition
XH Li, S Wang, H Xie, YO Wei, TT Kao, M Satter, SC Shen, ...
physica status solidi (b) 252 (5), 1089-1095, 2015
422015
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
TT Kao, YS Liu, MM Satter, XH Li, Z Lochner, PD Yoder, T Detchprohm, ...
Applied Physics Letters 103 (21), 211103, 2013
422013
Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition
XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ...
Journal of Crystal Growth 414, 76-80, 2015
392015
Low-temperature growth of InGaN films over the entire composition range by MBE
CAM Fabien, BP Gunning, WA Doolittle, AM Fischer, YO Wei, H Xie, ...
Journal of Crystal Growth 425, 115-118, 2015
372015
Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors
T Detchprohm, YS Liu, K Mehta, S Wang, H Xie, TT Kao, SC Shen, ...
Applied Physics Letters 110 (1), 011105, 2017
282017
Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
YS Liu, AFMS Haq, TT Kao, K Mehta, SC Shen, T Detchprohm, PD Yoder, ...
Journal of Crystal Growth 443, 81-84, 2016
232016
Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells
X Li, H Xie, FA Ponce, JH Ryou, T Detchprohm, RD Dupuis
Applied Physics Letters 107 (24), 241109, 2015
212015
Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition
YS Liu, S Wang, H Xie, TT Kao, K Mehta, XJ Jia, SC Shen, PD Yoder, ...
Applied Physics Letters 109 (8), 081103, 2016
202016
InAs quantum dot growth on AlxGa1− xAs by metalorganic vapor phase epitaxy for intermediate band solar cells
R Jakomin, RMS Kawabata, RT Mourao, DN Micha, MP Pires, H Xie, ...
Journal of Applied Physics 116 (9), 093511, 2014
202014
Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates
YS Liu, Z Lochner, TT Kao, M Satter, XH Li, JH Ryou, SC Shen, PD Yoder, ...
physica status solidi (c) 11 (2), 258-260, 2014
182014
Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells
EC Weiner, R Jakomin, DN Micha, H Xie, PY Su, LD Pinto, MP Pires, ...
Solar Energy Materials and Solar Cells 178, 240-248, 2018
162018
Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures
A Maros, N Faleev, RR King, CB Honsberg, D Convey, H Xie, FA Ponce
Journal of Vacuum Science & Technology B 34 (2), 02L113, 2016
162016
Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation
H Xie, R Prioli, AM Fischer, FA Ponce, RMS Kawabata, LD Pinto, ...
Journal of Applied Physics 120 (3), 034301, 2016
152016
Gallium Nitride Materials and Devices XI
YS Liu, TT Kao, K Mehta, SC Shen, PD Yoder, T Detchprohm, RD Dupuis, ...
SPIE, 2016
10*2016
Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters
YS Liu, TT Kao, M Satter, Z Lochner, SC Shen, T Detchprohm, PD Yoder, ...
Photonics Technology Letters, IEEE 27 (16), 1768-1771, 2015
102015
Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots
H Xie, R Prioli, G Torelly, H Liu, AM Fischer, R Jakomin, R Mourão, ...
Semiconductor Science and Technology 32 (5), 055013, 2017
92017
Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE
G Torelly, R Jakomin, LD Pinto, MP Pires, J Ruiz, PG Caldas, R Prioli, ...
Journal of Crystal Growth 434, 47-54, 2016
72016
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