| Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, MM Satter, SC Shen, PD Yoder, ... Applied Physics Letters 102 (10), 101110, 2013 | 96 | 2013 |
| Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, PD Yoder, RD Dupuis, ... Applied Physics Letters 105 (14), 141106, 2014 | 94 | 2014 |
| Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ... Applied Physics Letters 106 (4), 041115, 2015 | 63 | 2015 |
| Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition XH Li, S Wang, H Xie, YO Wei, TT Kao, M Satter, SC Shen, ... physica status solidi (b) 252 (5), 1089-1095, 2015 | 55 | 2015 |
| Low-temperature growth of InGaN films over the entire composition range by MBE CAM Fabien, BP Gunning, WA Doolittle, AM Fischer, YO Wei, H Xie, ... Journal of Crystal Growth 425, 115-118, 2015 | 49 | 2015 |
| Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors TT Kao, YS Liu, MM Satter, XH Li, Z Lochner, PD Yoder, T Detchprohm, ... Applied Physics Letters 103 (21), 211103, 2013 | 46 | 2013 |
| Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ... Journal of Crystal Growth 414, 76-80, 2015 | 40 | 2015 |
| Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors T Detchprohm, YS Liu, K Mehta, S Wang, H Xie, TT Kao, SC Shen, ... Applied Physics Letters 110 (1), 011105, 2017 | 39 | 2017 |
| Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells EC Weiner, R Jakomin, DN Micha, H Xie, PY Su, LD Pinto, MP Pires, ... Solar Energy Materials and Solar Cells 178, 240-248, 2018 | 32 | 2018 |
| Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells X Li, H Xie, FA Ponce, JH Ryou, T Detchprohm, RD Dupuis Applied Physics Letters 107 (24), 241109, 2015 | 32 | 2015 |
| InAs quantum dot growth on AlxGa1− xAs by metalorganic vapor phase epitaxy for intermediate band solar cells R Jakomin, RMS Kawabata, RT Mourao, DN Micha, MP Pires, H Xie, ... Journal of Applied Physics 116 (9), 093511, 2014 | 26 | 2014 |
| Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition YS Liu, S Wang, H Xie, TT Kao, K Mehta, XJ Jia, SC Shen, PD Yoder, ... Applied Physics Letters 109 (8), 081103, 2016 | 23 | 2016 |
| Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition YS Liu, AFMS Haq, TT Kao, K Mehta, SC Shen, T Detchprohm, PD Yoder, ... Journal of Crystal Growth 443, 81-84, 2016 | 23 | 2016 |
| Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation H Xie, R Prioli, AM Fischer, FA Ponce, RMS Kawabata, LD Pinto, ... Journal of Applied Physics 120 (3), 034301, 2016 | 22 | 2016 |
| Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures A Maros, N Faleev, RR King, CB Honsberg, D Convey, H Xie, FA Ponce Journal of Vacuum Science & Technology B 34 (2), 02L113, 2016 | 20 | 2016 |
| Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates YS Liu, Z Lochner, TT Kao, M Satter, XH Li, JH Ryou, SC Shen, PD Yoder, ... physica status solidi (c) 11 (2), 258-260, 2014 | 20 | 2014 |
| Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots H Xie, R Prioli, G Torelly, H Liu, AM Fischer, R Jakomin, R Mourão, ... Semiconductor Science and Technology 32 (5), 055013, 2017 | 11 | 2017 |
| Gallium Nitride Materials and Devices XI YS Liu, TT Kao, K Mehta, SC Shen, PD Yoder, T Detchprohm, RD Dupuis, ... SPIE, 2016 | 10* | 2016 |
| Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters YS Liu, TT Kao, M Satter, Z Lochner, SC Shen, T Detchprohm, PD Yoder, ... Photonics Technology Letters, IEEE 27 (16), 1768-1771, 2015 | 10 | 2015 |
| Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE G Torelly, R Jakomin, LD Pinto, MP Pires, J Ruiz, PG Caldas, R Prioli, ... Journal of Crystal Growth 434, 47-54, 2016 | 7 | 2016 |
