Md. Mahbub Satter
Md. Mahbub Satter
Silicon Photonics Solutions Group, Intel Corporation
Verified email at intel.com - Homepage
Title
Cited by
Cited by
Year
Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers
S Choi, MH Ji, J Kim, HJ Kim, MM Satter, PD Yoder, JH Ryou, RD Dupuis, ...
Applied Physics Letters 101 (16), 161110, 2012
922012
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
Z Lochner, TT Kao, YS Liu, XH Li, MM Satter, SC Shen, PD Yoder, ...
Applied Physics Letters 102 (10), 101110, 2013
812013
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, PD Yoder, RD Dupuis, ...
Applied Physics Letters 105 (14), 141106, 2014
792014
Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate
Xiao-Hang Li, Tsung-Ting Kao, Md. Mahbub Satter, Yong O. Wei, Shuo Wang ...
Applied Physics Letters 106, 041115, 0
56*
Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition
XH Li, S Wang, H Xie, YO Wei, TT Kao, M Satter, SC Shen, ...
physica status solidi (b) 252 (5), 1089-1095, 2015
422015
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
TT Kao, YS Liu, MM Satter, XH Li, Z Lochner, PD Yoder, T Detchprohm, ...
Applied Physics Letters 103 (21), 211103, 2013
422013
Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition
XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ...
Journal of Crystal Growth 414, 76-80, 2015
392015
Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers
MM Satter, HJ Kim, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder
Quantum Electronics, IEEE Journal of 48 (5), 703-711, 2012
392012
Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates
MM Satter, A Haque
Solid-State Electronics 54 (6), 621-627, 2010
282010
AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport
MM Satter, Z Lochner, TT Kao, YS Liu, XH Li, SC Shen, RD Dupuis, ...
Quantum Electronics, IEEE Journal of 50 (3), 166-173, 2014
212014
On the enhancement of the drain current in indium-rich InGaAs surface-channel MOSFETs
ATM Golam Sarwar, MR Siddiqui, MM Satter, A Haque
Electron Devices, IEEE Transactions on 59 (6), 1653-1660, 2012
202012
Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates
YS Liu, Z Lochner, TT Kao, M Satter, XH Li, JH Ryou, SC Shen, PD Yoder, ...
physica status solidi (c) 11 (2), 258-260, 2014
182014
A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates
MM Satter, AE Islam, D Varghese, MA Alam, A Haque
Solid-State Electronics 56 (1), 141-147, 2011
142011
Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa
MM Satter, PD Yoder
Optical and quantum electronics 42 (11-13), 747-754, 2011
112011
Lateral carrier confinement and threshold current reduction in GaN QW lasers with deeply etched mesa
MM Satter, PD Yoder
10th International Conference on Numerical Simulation of Optoelectronic …, 2010
112010
Inverse-Tapered P-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters
YS Liu, TT Kao, M Satter, Z Lochner, SC Shen, T Detchprohm, D Yoder, ...
IEEE, 2015
102015
Stimulated emission at 257 nm from optically‐pumped AlGaN/AlN heterostructure on AlN substrate
Z Lochner, XH Li, TT Kao, M Satter, HJ Kim, SC Shen, PD Yoder, JH Ryou, ...
physica status solidi (a) 210 (9), 1768-1770, 2013
92013
Polarization Matching in AlGaN-Based Multiple-Quantum-Well Deep Ultraviolet Laser Diodes on AlN Substrates Using Quaternary AlInGaN Barriers
MM Satter, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder
Lightwave Technology, Journal of 30 (18), 3017-3025, 2012
82012
Theoretical analysis of strategies for improving p‐type conductivity in wurtzite III‐nitride devices for high‐power opto‐and microelectronic applications
M Satter, YS Liu, TT Kao, Z Lochner, X Li, JH Ryou, SC Shen, ...
physica status solidi (c) 11 (3‐4), 828-831, 2014
42014
Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at< 260nm grown by metalorganic chemical vapor deposition
Z Lochner, TT Kao, YS Liu, XH Li, MM Satter, SC Shen, PD Yoder, ...
SPIE OPTO, 862519-862519-6, 2013
42013
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