MOS CV characterization of ultrathin gate oxide thickness (1.3-1.8 nm) CH Choi, JS Goo, TY Oh, Z Yu, RW Dutton, A Bayoumi, M Cao, ... Electron Device Letters, IEEE 20 (6), 292-294, 1999 | 89 | 1999 |
Scientific and engineering computing using ati stream technology A Bayoumi, M Chu, Y Hanafy, P Harrell, G Refai-Ahmed Computing in Science and Engineering 11 (6), 92-97, 2009 | 37 | 2009 |
CV and gate tunneling current characterization of ultra-thin gate oxide MOS (tox= 1.3-1.8 nm) CH Choi, JS Goo, TY Oh, Z Yu, RW Dutton, A Bayoumi, M Cao, ... VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on, 63-64, 1999 | 28 | 1999 |
Massive parallelization of SPICE device model evaluation on GPU-based SIMD architectures AM Bayoumi, YY Hanafy Proceedings of the 1st international forum on Next-generation multicore …, 2008 | 21 | 2008 |
Parallel Circuit Simulation using the Direct Method on a Heterogeneous Cloud A Helal, A Bayoumi, Y Hanafy 52nd Design Automation Conference (DAC 2015 ), San Francisco, CA, USA., 2015 | 11 | 2015 |
Evaluation of photovoltaic properties of nanocrystalline-FeSi2 /Si heterojunctions TY Mahmoud Shaban, Amr M. Bayoumi, Doaa Farouk, Mohamed B. Saleh Solid State Electronics 123, 111–118, 2016 | 10 | 2016 |
A 0.25 μm MOSFET Technology Using In Situ Rapid Thermal Gate Dielectrics KX Zhang, CM Osburn, G Hames, C Parker, A Bayoumi Journal of the Electrochemical Society 143, 744, 1996 | 8 | 1996 |
Scalability of plasma damage with gate oxide thickness A Bayoumi, S Ma, B Langley, M Cox, M Tavassoli, C Diaz, M Cao, ... Plasma Process-Induced Damage, 1997., 2nd International Symposium on, 11-14, 1997 | 7 | 1997 |
Hardware implementation of LU decomposition using dataflow architecture on FPGA M Eljammaly, Y Hanafy, A Wahdan, A Bayoumi Computer Science and Information Technology (CSIT), 2013 5th International …, 2013 | 3 | 2013 |
Plasma Induced Charging Damage On 30Å Gate Oxide Antenna MOS Capacitor Structure During Polysilicon Gate Etch S Ma, C Chi, A Bayoumi, B Langley, M Cao, P Marcoux, W Greene, G Ray Plasma Process-Induced Damage, 1997., 2nd International Symposium on, 25-28, 1997 | 3 | 1997 |
Design and operation of a cluster-tool-based rapid thermal processing module AM Bayoumi, CL Silvestre, RT Keuhn, JR Hauser University/Government/Industry Microelectronics Symposium, 1993 …, 1993 | 3 | 1993 |
Investigation of the Need for Alternative cleaning Chemistries for 30Å Gate Oxides A Bayoumi, A Fischer-Colbrie, R Parker, M Cox, W Greene MRS Proceedings 477 (1), 1997 | 2 | 1997 |
Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module AM Bayoumi, J Montgomery, RT Kuehn, FS Johnson, JR Hauser Proceedings of SPIE 2091, 84, 1994 | 2 | 1994 |
Temperature control of a rapid thermal processing module AM Bayoumi | 2 | 1992 |
Impact of Bottom Dielectric Isolation of Si-Stacked Nanosheet Transistor on Stress and Self-Heating at 3-nm Node and Beyond M Saleh, AM Bayoumi, H Abdelhamid IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
Analysis of Dual Gate Structures Using Double-Well and WKB Quantization Rules AM Bayoumi IEEE Transactions on Electron Devices 63 (9), 3627 - 3635, 2016 | 1 | 2016 |
Use of WKB approximation for analytical boundary conditions in numerical solution of Schrödinger equation: application to semiconductor-high-k dielectric interfaces AM Bayoumi International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016 | 1 | 2016 |
D2. Simplified analytical iterations for electron wavefunction using self-consistent solution for nm MOS gate stacks AM Bayoumi Radio Science Conference (NRSC), 2012 29th National, 563-570, 2012 | 1 | 2012 |
A Novel Low-Temperature Gate Oxynitride for CMOS Technologies C Diaz, M Cox, W Greene, F Perlaki, E Carr, I Manna, A Bayoumi, M Cao, ... VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on, 49-50, 1997 | 1 | 1997 |
Experimental optimization of transport properties of Si-SiO 2 interfaces for rapid thermal deposited gate oxides AM Bayoumi North Carolina State University., 1995 | 1 | 1995 |