Sami Alghamdi
Sami Alghamdi
Assistant Professor at King Abdulaziz University - PhD, Purdue University
Vahvistettu sähköpostiosoite verkkotunnuksessa - Kotisivu
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
H Zhou, S Alghmadi, M Si, G Qiu, DY Peide
IEEE Electron Device Letters 37 (11), 1411-1414, 2016
High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric
H Zhou, X Lou, NJ Conrad, M Si, H Wu, S Alghamdi, S Guo, RG Gordon, ...
IEEE Electron Device Letters 37 (5), 556-559, 2016
Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition
X Lou, H Zhou, SB Kim, S Alghamdi, X Gong, J Feng, X Wang, PD Ye, ...
Nano letters 16 (12), 7650-7654, 2016
Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in-Ga2O3FETs
H Bae, J Noh, S Alghamdi, M Si, DY Peide
IEEE Electron Device Letters 39 (11), 1708-1711, 2018
Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction
H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ...
ACS omega 4 (24), 20756-20761, 2019
Low frequency noise in MOS2 negative capacitance field-effect transistor
S Alghamdi, M Si, L Yang, DY Peide
2018 IEEE International Reliability Physics Symposium (IRPS), P-TX. 1-1-P-TX …, 2018
Single pulse charge pumping measurements on GaN MOS-HEMTs: Fast and reliable extraction of interface traps density
S Alghamdi, M Si, H Bae, H Zhou, DY Peide
IEEE Transactions on Electron Devices 67 (2), 444-448, 2020
Time response of polarization switching in Ge hafnium zirconium oxide nanowire ferroelectric field-effect transistors
S Alghamdi, W Chung, M Si, DY Peide
2018 76th Device Research Conference (DRC), 1-2, 2018
InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate …
H Zhou, X Lou, H Wu, S Alghamdi, S Guo, RG Gordon, DY Peide
2015 73rd Annual Device Research Conference (DRC), 57-58, 2015
Low-Frequency Noise in III–V, Ge, and 2D Transistors
M Si, X Li, W Wu, S Alghamdi, P Ye
Noise in Nanoscale Semiconductor Devices, 335, 2020
Järjestelmä ei voi suorittaa toimenpidettä nyt. Yritä myöhemmin uudelleen.
Artikkelit 1–11