Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region M Sadaka, I Radu
US Patent 8,461,017, 2013
271 2013 Recent Developments of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking I Radu, D Landru, G Gaudin, G Riou, C Tempesta, F Letertre, L Di Cioccio, ...
2010 IEEE International 3D Systems Integration Conference (3DIC), 1-6, 2010
247 2010 Direct bonding for wafer level 3D integration L Di Cioccio, I Radu, P Gueguen, M Sadaka
2010 IEEE International Conference on Integrated Circuit Design and …, 2010
236 2010 Method for curing defects in a semiconductor layer I Radu, C Gourdel, C Vetizou
US Patent 8,993,461, 2015
184 2015 Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods M Sadaka, I Radu, D Landru
US Patent 8,716,105, 2014
156 2014 Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods M Sadaka, I Radu, D Landru, L Di Cioccio
US Patent 8,501,537, 2013
133 2013 An overview of patterned metal/dielectric surface bonding: mechanism, alignment and characterization L Di Cioccio, P Gueguen, R Taibi, D Landru, G Gaudin, C Chappaz, ...
Journal of the Electrochemical Society 158 (6), P81, 2011
85 2011 Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technology F Fournel, L Continni, C Morales, J Da Fonseca, H Moriceau, F Rieutord, ...
Journal of Applied Physics 111 (10), 2012
70 2012 GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding I Radu, I Szafraniak, R Scholz, M Alexe, U Gösele
Journal of Applied Physics 94 (12), 7820-7825, 2003
69 2003 A model of interface defect formation in silicon wafer bonding S Vincent, I Radu, D Landru, F Letertre, F Rieutord
Applied Physics Letters 94 (10), 2009
61 2009 Oxidation behavior of AlN substrate at low temperature JW Lee, I Radu, M Alexe
Journal of materials science: materials in electronics 13, 131-137, 2002
45 2002 Strain relaxation in nanopatterned strained silicon round pillars C Himcinschi, R Singh, I Radu, AP Milenin, W Erfurth, M Reiche, U Gösele, ...
Applied physics letters 90 (2), 2007
42 2007 Low-temperature layer splitting of (100) GaAs by coimplantation and direct wafer bonding I Radu, I Szafraniak, R Scholz, M Alexe, U Gösele
Applied physics letters 82 (15), 2413-2415, 2003
42 2003 Physical models of planar spiral inductor integrated on the high-resistivity and trap-rich silicon-on-insulator substrates S Liu, L Zhu, F Allibert, I Radu, X Zhu, Y Lu
IEEE Transactions on Electron Devices 64 (7), 2775-2781, 2017
38 2017 Single-crystalline ferroelectric thin films by ion implantation and direct wafer bonding I Szafraniak, I Radu, R Scholz, M Alexe, U Gösele
Integrated Ferroelectrics 55 (1), 983-990, 2003
33 2003 Investigation of hydrogen implantation induced blistering in GaN R Singh, I Radu, U Gösele, SH Christiansen
physica status solidi c 3 (6), 1754-1757, 2006
32 2006 Formation of nanovoids in high-dose hydrogen implanted GaN I Radu, R Singh, R Scholz, U Gösele, S Christiansen, G Brüderl, C Eichler, ...
Applied physics letters 89 (3), 2006
30 2006 3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525° C with improved reliability A Vandooren, J Franco, B Parvais, Z Wu, L Witters, A Walke, W Li, L Peng, ...
2018 IEEE Symposium on VLSI Technology, 69-70, 2018
28 2018 Strained silicon on insulator (SSOI) by waferbonding SH Christiansen, R Singh, I Radu, M Reiche, U Gösele, D Webb, ...
Materials science in semiconductor processing 8 (1-3), 197-202, 2005
28 2005 Methods of forming bonded semiconductor structures M Sadaka, I Radu
US Patent 8,866,305, 2014
27 2014