Seuraa
Chang Niu
Chang Niu
Vahvistettu sähköpostiosoite verkkotunnuksessa purdue.edu
Nimike
Viittaukset
Viittaukset
Vuosi
A ferroelectric semiconductor field-effect transistor
M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ...
Nature Electronics 2 (12), 580-586, 2019
3732019
Indium–tin-oxide transistors with one nanometer thick channel and ferroelectric gating
M Si, J Andler, X Lyu, C Niu, S Datta, R Agrawal, PD Ye
ACS nano 14 (9), 11542-11547, 2020
832020
Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene
G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, PD Ye
Nature Nanotechnology 15 (7), 585-591, 2020
812020
The resurrection of tellurium as an elemental two-dimensional semiconductor
G Qiu, A Charnas, C Niu, Y Wang, W Wu, PD Ye
npj 2D Materials and Applications 6 (1), 17, 2022
402022
Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization
C Niu, G Qiu, Y Wang, Z Zhang, M Si, W Wu, DY Peide
Physical Review B 101 (20), 205414, 2020
332020
BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of …
M Si, A Murray, Z Lin, J Andler, J Li, J Noh, S Alajlouni, C Niu, X Lyu, ...
IEEE Transactions on Electron Devices 68 (7), 3195-3199, 2021
252021
Nanometer-thick oxide semiconductor transistor with ultra-high drain current
Z Lin, M Si, V Askarpour, C Niu, A Charnas, Z Shang, Y Zhang, Y Hu, ...
ACS nano 16 (12), 21536-21545, 2022
112022
Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well
C Niu, G Qiu, Y Wang, M Si, W Wu, PD Ye
Nano letters 21 (18), 7527-7533, 2021
112021
Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium
C Niu, G Qiu, Y Wang, P Tan, M Wang, J Jian, H Wang, W Wu, PD Ye
Nano letters 23 (18), 8445-8453, 2023
7*2023
Tunable circular photogalvanic and photovoltaic effect in 2D tellurium with different chirality
C Niu, S Huang, N Ghosh, P Tan, M Wang, W Wu, X Xu, PD Ye
Nano Letters 23 (8), 3599-3606, 2023
52023
ACS Nano 14, 11542 (2020)
M Si, J Andler, X Lyu, C Niu, S Datta, R Agrawal, PD Ye
5
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing
Z Zhang, Z Lin, C Niu, M Si, MA Alam, DY Peide
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
22023
Exotic Spin-Orbit Torques in Chiral Tellurium
S Li, C Niu, A Hoffmann, PP Ye, R Liu
Bulletin of the American Physical Society, 2024
2024
Strong spin-orbit-interaction probed by weak antilocalization in p-type 2D Te under pressure
P Tan, C Niu, PP Ye, W Wu
Bulletin of the American Physical Society, 2024
2024
Comprehensive Magnetotransport Characterizations of the Chiral Crystal Te
Z Hua, C Niu, P Tan, H Liu, G Shi, PP Ye, P Xiong
Bulletin of the American Physical Society, 2024
2024
Landau Levels in a Weyl-type Spin-orbit Coupling Band
C Niu, P Tan, Z Zhang, W Wu, PP Ye
Bulletin of the American Physical Society, 2024
2024
Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited InO Thin-Film Transistors
C Niu, Z Lin, V Askarpour, Z Zhang, P Tan, M Si, Z Shang, Y Zhang, ...
IEEE Transactions on Electron Devices, 2024
2024
Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In2O3 TFTs Reaching the Quantum Limit
C Niu, Z Lin, Z Zhang, P Tan, M Si, Z Shang, Y Zhang, H Wang, PD Ye
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
First Determination of Thermal Resistance and Thermal Capacitance of Atomic-Layer-Deposited In2O3 Transistors
JY Lin, Z Zhang, S Alajlouni, PY Liao, Z Lin, C Niu, A Shakouri, PD Ye
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
High-pressure induced Weyl semimetal phase in 2D Tellurium
C Niu, Z Zhang, D Graf, S Lee, M Wang, W Wu, T Low, PD Ye
Communications Physics 6 (1), 345, 2023
2023
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Artikkelit 1–20