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Young-Tae Kim
Young-Tae Kim
삼성전자 반도체연구소 수석연구원
Verified email at samsung.com
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Year
A novel cell technology using N-doped GeSbTe films for phase change RAM
H Horii, JH Yi, JH Park, YH Ha, IG Baek, SO Park, YN Hwang, SH Lee, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
4462003
Full integration and reliability evaluation of phase-change RAM based on 0.24/spl mu/m-CMOS technologies
YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, JH Oh, HJ Kim, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
3502003
Highly reliable 50nm contact cell technology for 256Mb PRAM
SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005
3332005
Novel cell structure of PRAM with thin metal layer inserted GeSbTe
JH Yi, YH Ha, JH Park, BJ Kuh, H Horii, YT Kim, SO Park, YN Hwang, ...
IEEE International Electron Devices Meeting 2003, 37.3. 1-37.3. 4, 2003
2522003
Phase change memory devices including memory elements having variable cross-sectional areas
YT Kim, YN Hwang, TK Kim, WY Chung, KH Lee
US Patent 7,042,001, 2006
2252006
Full integration and cell characteristics for 64Mb nonvolatile PRAM
SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004
1442004
Phase-change memory devices
YN Hwang, YT Kim
US Patent 7,067,837, 2006
1332006
Methods for forming phase-change memory devices
YN Hwang, YT Kim
US Patent 7,351,991, 2008
1022008
Highly scalable phase change memory with CVD GeSbTe for sub 50nm generation
JI Lee, H Park, SL Cho, YL Park, BJ Bae, JH Park, JS Park, HG An, ...
2007 IEEE Symposium on VLSI Technology, 102-103, 2007
912007
Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory
F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
722005
Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors
YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, HJ Kim, ...
Non-Volatile Semiconductor Memory Workshop, Digest of Technical Papers, US …, 2003
542003
Programming characteristics of phase change random access memory using phase change simulations
YT Kim, YN Hwang, KH Lee, SH Lee, CW Jeong, SJ Ahn, F Yeung, ...
Japanese journal of applied physics 44 (4S), 2701, 2005
492005
Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology
YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, HJ Kim, ...
2003 International Symposium on VLSI Technology, Systems and Applications …, 2003
392003
In and Moon
H Horii, JH Yi, JH Park, YH Ha, IG Baek, SO Park, YN Hwang, SH Lee, ...
JT," A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM …, 2003
382003
Study on cell characteristics of PRAM using the phase-change simulation
YT Kim, KH Lee, WY Chung, TK Kim, YK Park, JT Kong
International Conference on Simulation of Semiconductor Processes and …, 2003
332003
Phase-change memory device and method of manufacturing the same
YT Kim, YN Hwang, TK Kim, WY Chung, KH Lee
US Patent 7,514,704, 2009
272009
Novel heat dissipating cell scheme for improving a reset distribution in a 512M phase-change random access memory (PRAM)
DH Kang, JS Kim, YR Kim, YT Kim, MK Lee, YJ Jun, JH Park, F Yeung, ...
2007 IEEE Symposium on VLSI Technology, 96-97, 2007
272007
Performance evaluation of InGaAs, Si, and Ge nFinFETs based on coupled 3D drift-diffusion/multisubband Boltzmann transport equations solver
S Jin, AT Pham, W Choi, Y Nishizawa, YT Kim, KH Lee, Y Park, ES Jung
2014 IEEE International Electron Devices Meeting, 7.5. 1-7.5. 4, 2014
212014
Simulation for Reset operation of Ge2Sb2Te5 phase-change random access memory
SS Kim, SM Jeong, KH Lee, YK Park, YT Kim, JT Kong, HL Lee
Japanese journal of applied physics 44 (8R), 5943, 2005
212005
PRAM process technology
GH Koh, YN Hwang, SH Lee, SY Lee, KC Ryoo, JH Park, YJ Song, ...
2004 International Conference on Integrated Circuit Design and Technology …, 2004
152004
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