Xuewei Feng
Xuewei Feng
Verified email at u.nus.edu
Cited by
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Few‐layer black phosphorus carbide field‐effect transistor via carbon doping
WC Tan, Y Cai, RJ Ng, L Huang, X Feng, G Zhang, YW Zhang, CA Nijhuis, ...
Advanced Materials 29 (24), 1700503, 2017
Artificial synapses based on multiterminal memtransistors for neuromorphic application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
Impact and origin of interface states in MOS capacitor with monolayer MoS 2 and HfO 2 High-k dielectric
P Xia, X Feng, RJ Ng, S Wang, D Chi, C Li, Z He, X Liu, KW Ang
Scientific reports 7 (1), 1-9, 2017
2D photovoltaic devices: progress and prospects
L Wang, L Huang, WC Tan, X Feng, L Chen, X Huang, KW Ang
Small Methods 2 (3), 1700294, 2018
High mobility anisotropic black phosphorus nanoribbon field‐effect transistor
X Feng, X Huang, L Chen, WC Tan, L Wang, KW Ang
Advanced Functional Materials 28 (28), 1801524, 2018
A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy
X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ...
Advanced Electronic Materials 5 (12), 1900740, 2019
Black phosphorus carbide as a tunable anisotropic plasmonic metasurface
X Huang, Y Cai, X Feng, WC Tan, DMN Hasan, L Chen, N Chen, L Wang, ...
ACS photonics 5 (8), 3116-3123, 2018
Black phosphorus based field effect transistors with simultaneously achieved near ideal subthreshold swing and high hole mobility at room temperature
X Liu, KW Ang, W Yu, J He, X Feng, Q Liu, H Jiang, D Tang, J Wen, Y Lu, ...
Scientific reports 6 (1), 1-8, 2016
Anomalously enhanced thermal stability of phosphorene via metal adatom doping: an experimental and first-principles study
X Feng, VV Kulish, P Wu, X Liu, KW Ang
Nano Research 9 (9), 2687-2695, 2016
Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits
W Liao, L Wang, L Chen, W Wei, Z Zeng, X Feng, L Huang, WC Tan, ...
Nanoscale 10 (36), 17007-17014, 2018
Recent Advances in Black Phosphorus‐Based Electronic Devices
WC Tan, L Wang, X Feng, L Chen, L Huang, X Huang, KW Ang
Advanced Electronic Materials 5 (2), 1800666, 2019
Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics
L Wang, L Huang, WC Tan, X Feng, L Chen, KW Ang
Nanoscale 10 (29), 14359-14367, 2018
Gigahertz integrated circuits based on complementary black phosphorus transistors
L Chen, S Li, X Feng, L Wang, X Huang, BCK Tee, KW Ang
Advanced Electronic Materials 4 (9), 1800274, 2018
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide
L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ...
Advanced Electronic Materials 6 (6), 2000057, 2020
2D photonic memristor beyond graphene: progress and prospects
X Feng, X Liu, KW Ang
Nanophotonics 9 (7), 1579-1599, 2020
Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode
L Wang, L Huang, WC Tan, X Feng, L Chen, KW Ang
Advanced Electronic Materials 4 (1), 1700442, 2018
Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure
X Huang, X Feng, L Chen, L Wang, WC Tan, L Huang, KW Ang
Nano Energy 62, 667-673, 2019
Complementary black phosphorus nanoribbons field-effect transistors and circuits
X Feng, L Wang, X Huang, L Chen, KW Ang
IEEE Transactions on Electron Devices 65 (10), 4122-4128, 2018
A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration
L Wang, Y Li, X Feng, KW Ang, X Gong, A Thean, G Liang
2017 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2017
Aerosol Jet Printed WSe2 Crossbar Architecture Device on Kapton With Dual Functionality as Resistive Memory and Photosensor for Flexible System Integration
Y Li, X Feng, M Sivan, JF Leong, B Tang, X Wang, JN Tey, J Wei, KW Ang, ...
IEEE Sensors Journal 20 (9), 4653-4659, 2020
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