Yee-Chia Yeo
Cited by
Cited by
Breaking the speed limits of phase-change memory
D Loke, TH Lee, WJ Wang, LP Shi, R Zhao, YC Yeo, TC Chong, SR Elliott
Science 336 (6088), 1566-1569, 2012
Immersion fluid for immersion lithography, and method of performing immersion lithography
Y Yeo, B Lin, C Hu
US Patent 7,700,267, 2010
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
YC Yeo, TJ King, C Hu
Journal of applied physics 92 (12), 7266-7271, 2002
Lithography apparatus for manufacture of integrated circuits
Y Yeo, C Hu
US Patent 7,579,135, 2009
Method and system for immersion lithography
CH Lin, Y Yeo
US Patent App. 10/748,076, 2005
Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
Y Yeo, H Chen, C Huang, W Lee, F Yang, C Hu
US Patent 6,867,433, 2005
5nm-gate nanowire FinFET
FL Yang, DH Lee, HY Chen, CY Chang, SD Liu, CC Huang, TX Chung, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 196-197, 2004
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
YC Yeo, TC Chong, MF Li
Journal of applied physics 83 (3), 1429-1436, 1998
25 nm CMOS omega FETs
FL Yang, HY Chen, FC Chen, CC Huang, CY Chang, HK Chiu, CC Lee, ...
Digest. International Electron Devices Meeting,, 255-258, 2002
Effects of high-/spl kappa/gate dielectric materials on metal and silicon gate workfunctions
YC Yeo, P Ranade, TJ King, C Hu
IEEE Electron Device Letters 23 (6), 342-344, 2002
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
C Ko, W Lee, Y Yeo, C Lin, C Hu
US Patent 7,112,495, 2006
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
YC Yeo, Q Lu, WC Lee, TJ King, C Hu, X Wang, X Guo, TP Ma
IEEE Electron Device Letters 21 (11), 540-542, 2000
MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations
YC Yeo, TJ King, C Hu
IEEE Transactions on Electron Devices 50 (4), 1027-1035, 2003
Semiconductor nano-rod devices
H Chen, Y Yeo, F Yang, C Hu
US Patent 6,855,606, 2005
Electronic band structure and effective mass parameters of Ge1-xSnx alloys
K Lu Low, Y Yang, G Han, W Fan, YC Yeo
Journal of Applied Physics 112 (10), 103715, 2012
Strained-channel multiple-gate transistor
Y Yeo, F Yang, C Hu
US Patent 6,855,990, 2005
Direct tunneling leakage current and scalability of alternative gate dielectrics
YC Yeo, TJ King, C Hu
Applied Physics Letters 81 (11), 2091-2093, 2002
Strained-channel transistor structure with lattice-mismatched zone
Y Yeo, C Lin, W Lee, C Hu
US Patent 6,921,913, 2005
Tunneling field-effect transistor: capacitance components and modeling
Y Yang, X Tong, LT Yang, PF Guo, L Fan, YC Yeo
IEEE Electron Device Letters 31 (7), 752-754, 2010
Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
EH Toh, GH Wang, G Samudra, YC Yeo
Journal of Applied Physics 103 (10), 104504, 2008
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