High performance raised source/drain InAs/In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer S Lee, CY Huang, D Cohen-Elias, JJM Law, V Chobpattanna, S Krämer, ...
Applied Physics Letters 103 (23), 2013
58 2013 Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION= 482 μA/μm at IOFF= 100 nA/μm and VDD= 0.5 V S Lee, CY Huang, D Cohen-Elias, BJ Thibeault, W Mitchell, ...
IEEE Electron Device Lett 35 (6), 621-623, 2014
42 2014 Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed -L Valleys SR Mehrotra, M Povolotskyi, DC Elias, T Kubis, JJM Law, MJW Rodwell, ...
IEEE electron device letters 34 (9), 1196-1198, 2013
39 2013 InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection Y Uliel, D Cohen-Elias, N Sicron, I Grimberg, N Snapi, Y Paltiel, M Katz
Infrared Physics & Technology 84, 63-71, 2017
36 2017 Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector D Cohen-Elias, Y Uliel, O Klin, N Snapi, E Weiss, I Shafir, O Westreich, ...
Infrared Physics & Technology 84, 82-86, 2017
30 2017 Record extrinsic transconductance (2.45 mS/µm at VDS = 0.5 V) InAs/In0.53 Ga0.47 As channel MOSFETs using MOCVD source-drain regrowth S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ...
2013 Symposium on VLSI Technology, T246-T247, 2013
26 2013 Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode D Cohen-Elias, N Snapi, O Klin, E Weiss, S Shusterman, T Meir, M Katz
Applied Physics Letters 111 (20), 2017
23 2017 Controlling graphene work function by doping in a MOCVD reactor C Klein, D Cohen-Elias, G Sarusi
Heliyon 4 (12), 2018
17 2018 Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector D Cohen-Elias, Y Uliel, N Cohen, I Shafir, O Westreich, M Katz
Infrared Physics & Technology 85, 81-85, 2017
16 2017 An Abrupt InP-GaInAs-InP DHBT DC Elias, S Kraus, A Gavrilov, S Cohen, N Buadana, V Sidorov, D Ritter
IEEE electron device letters 26 (1), 14-16, 2004
16 2004 Improved performances InAs/AlSb Type-II superlattice photodiodes for eSWIR with Ldiff of 2.4 µm and QE of 38% at 300 K I Shafir, D Cohen-Elias, N Snapi, O Klin, E Weiss, N Sicron, M Katz
Infrared Physics & Technology 105, 103210, 2020
15 2020 Kirk effect in bipolar transistors with a nonuniform dopant profile in the collector DC Elias, D Ritter
IEEE electron device letters 27 (1), 25-27, 2005
15 2005 High responsivity InGaAsSb p–n photodetector for extended SWIR detection I Shafir, N Snapi, D Cohen-Elias, A Glozman, O Klin, E Weiss, ...
Applied Physics Letters 118 (6), 2021
13 2021 Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy V Garbe, B Abendroth, H Stöcker, A Gavrilov, D Cohen‐Elias, S Mehari, ...
Crystal Research and Technology 50 (6), 425-431, 2015
13 2015 Nanometer InP electron devices for VLSI and THz applications MJW Rodwell, S Lee, CY Huang, D Elias, V Chobpattanna, J Rode, ...
72nd Device Research Conference, 215-216, 2014
13 2014 High transconductance surface channel In0.53 Ga0.47 As MOSFETs using MBE source-drain regrowth and surface digital etching S Lee, CY Huang, AD Carter, JJM Law, DC Elias, V Chobpattana, ...
2013 International Conference on Indium Phosphide and Related Materials …, 2013
13 2013 Reduction of leakage current in In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0. 56Sb0. 44 confinement layers CY Huang, S Lee, D Cohen-Elias, JJM Law, AD Carter, V Chobpattana, ...
Applied Physics Letters 103 (20), 2013
11 2013 A fast avalanche Si diode with a 517 μm low-doped region AS Kesar, A Raizman, G Atar, S Zoran, S Gleizer, Y Krasik, D Cohen-Elias
Applied Physics Letters 117 (1), 2020
10 2020 An InP HBT-based oscillator monolithically integrated with a photodiode E Shumakher, T Magrisso, S Kraus, D Cohen-Elias, A Gavrilov, S Cohen, ...
Journal of lightwave technology 26 (15), 2679-2683, 2008
10 2008 Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy D Cohen-Elias, JJM Law, HW Chiang, A Sivananthan, C Zhang, ...
71st Device Research Conference, 1-2, 2013
8 2013