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Dimitris Ioannou
Dimitris Ioannou
Professor of Electrical Engineering, George Mason University
Verified email at gmu.edu
Title
Cited by
Cited by
Year
A SEM-EBIC minority-carrier diffusion-length measurement technique
DE Ioannou, CA Dimitriadis
IEEE Transactions on Electron Devices 29 (3), 445-450, 1982
1371982
Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ...
ACS applied materials & interfaces 7 (2), 1180-1187, 2015
972015
Adaptation of the charge pumping technique to gated pin diodes fabricated on silicon on insulator
T Ouisse, S Cristoloveanu, T Elewa, H Haddara, G Borel, DE Ioannou
IEEE transactions on electron devices 38 (6), 1432-1444, 1991
941991
Characterization of carrier generation in enhancement-mode SOI MOSFET's
DE Ioannou, S Cristoloveanu, M Mukherjee, B Mazhari
IEEE Electron Device Letters 11 (9), 409-411, 1990
931990
Topological insulator Bi2Se3 nanowire high performance field-effect transistors
H Zhu, CA Richter, E Zhao, JE Bonevich, WA Kimes, HJ Jang, H Yuan, ...
Scientific reports 3 (1), 1-5, 2013
862013
Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET's
B Mazhari, S Cristoloveanu, DE Ioannou, AL Caviglia
IEEE transactions on electron devices 38 (6), 1289-1295, 1991
841991
Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies
AA Salman, SG Beebe, M Emam, MM Pelella, DE Ioannou
2006 International Electron Devices Meeting, 1-4, 2006
782006
Formation of buried insulating layers in silicon by the implantation of high doses of oxygen
JA P.L.F. Hemment, E. Maydell-Ondrusz, K.G. Stephens, J. Butcher, D. Ioannou
Nuclear Instruments and Methods in Physics Research 209 (Part 1), 157-164, 1983
771983
The effect of heat treatment on Au Schottky contacts on β-SiC
DE Ioannou, NA Papanicolaou, PE Nordquist
IEEE transactions on electron devices 34 (8), 1694-1699, 1987
611987
Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs
S Cristoloveanu, SM Gulwadi, DE Ioannou, GJ Campisi, HL Hughes
IEEE electron device letters 13 (12), 603-605, 1992
601992
Silicon nanowire on oxide/nitride/oxide for memory application
Q Li, X Zhu, HD Xiong, SM Koo, DE Ioannou, JJ Kopanski, JS Suehle, ...
Nanotechnology 18 (23), 235204, 2007
592007
SOI field-effect diode DRAM cell: Design and operation
AZ Badwan, Z Chbili, Y Yang, AA Salman, Q Li, DE Ioannou
IEEE electron device letters 34 (8), 1002-1004, 2013
562013
Diffusion length evaluation of boron-implanted silicon using the SEM-EBIC/Schottky diode technique
DE Ioannou, SM Davidson
Journal of Physics D: Applied Physics 12 (8), 1339-1344, 1979
551979
Modeling early breakdown failures of gate oxide in SiC power MOSFETs
Z Chbili, A Matsuda, J Chbili, JT Ryan, JP Campbell, M Lahbabi, ...
IEEE Transactions on Electron Devices 63 (9), 3605-3613, 2016
422016
Opposite-channel-based injection of hot-carriers in SOI MOSFET's: physics and applications
DE Ioannou, FL Duan, SP Sinha, A Zaleski
IEEE Transactions on Electron Devices 45 (5), 1147-1154, 1998
381998
Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells
X Zhu, Q Li, DE Ioannou, D Gu, JE Bonevich, H Baumgart, JS Suehle, ...
Nanotechnology 22 (25), 254020, 2011
362011
Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET's
SP Sinha, A Zaleski, DE Ioannou
IEEE Transactions on Electron devices 41 (12), 2413-2416, 1994
361994
Deep states in silicon‐on‐insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy
PK McLarty, DE Ioannou, HL Hughes
Applied physics letters 53 (10), 871-873, 1988
361988
Scaling of the SOI field effect diode (FED) for memory application
Y Yang, A Gangopadhyay, Q Li, DE Ioannou
2009 International Semiconductor Device Research Symposium, 1-2, 2009
352009
Surface potential at threshold in thin-film SOI MOSFET's
B Mazhari, DE Ioannou
IEEE transactions on electron devices 40 (6), 1129-1133, 1993
351993
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