| Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs H Li, S Munk-Nielsen, X Wang, R Maheshwari, S Bęczkowski, ... IEEE Transactions on Power Electronics 31 (1), 621-634, 2015 | 261 | 2015 |
| A fast-switching integrated full-bridge power module based on GaN eHEMT devices AB Jørgensen, S Bęczkowski, C Uhrenfeldt, NH Petersen, S Jørgensen, ... IEEE Transactions on Power Electronics 34 (3), 2494-2504, 2018 | 91 | 2018 |
| Impact of power module parasitic capacitances on medium-voltage SiC MOSFETs switching transients DN Dalal, N Christensen, AB Jørgensen, JK Jørgensen, S Bęczkowski, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 298-310, 2019 | 76 | 2019 |
| Short-circuit degradation of 10-kV 10-A SiC MOSFET EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu, ... IEEE Transactions on Power Electronics 32 (12), 9342-9354, 2017 | 76 | 2017 |
| Aluminum nanoparticles for plasmon-improved coupling of light into silicon TF Villesen, C Uhrenfeldt, B Johansen, JL Hansen, HU Ulriksen, ... Nanotechnology 23 (8), 085202, 2012 | 63 | 2012 |
| Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations UM Choi, F Blaabjerg, S Jørgensen, F Iannuzzo, H Wang, C Uhrenfeldt, ... Microelectronics Reliability 64, 403-408, 2016 | 55 | 2016 |
| Self-assembled Al nanoparticles on Si and fused silica, and their application for Si solar cells TF Villesen, C Uhrenfeldt, B Johansen, AN Larsen Nanotechnology 24 (27), 275606, 2013 | 50 | 2013 |
| Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter DN Dalal, N Christensen, AB Jørgensen, SD Sønderskov, S Bęczkowski, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 47 | 2017 |
| Near-infrared–ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure C Uhrenfeldt, J Chevallier, AN Larsen, BB Nielsen Journal of Applied Physics 109 (9), 2011 | 46 | 2011 |
| Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM AB Jørgensen, N Christensen, DN Dalal, SD Sønderskov, S Bęczkowski, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 45 | 2017 |
| Conduction, reverse conduction and switching characteristics of GaN E-HEMT C Sørensen, ML Fogsgaard, MN Christiansen, MK Graungaard, ... 2015 IEEE 6th International Symposium on Power Electronics for Distributed …, 2015 | 43 | 2015 |
| Physics-based modeling of parasitic capacitance in medium-voltage filter inductors H Zhao, DN Dalal, AB Jørgensen, JK Jørgensen, X Wang, S Bęczkowski, ... IEEE Transactions on Power Electronics 36 (1), 829-843, 2020 | 41 | 2020 |
| Overview of digital design and finite-element analysis in modern power electronic packaging AB Jørgensen, S Munk-Nielsen, C Uhrenfeldt IEEE Transactions on Power Electronics 35 (10), 10892-10905, 2020 | 41 | 2020 |
| Switching current imbalance mitigation in power modules with parallel connected SiC MOSFETs S Bęczkowski, AB Jørgensen, H Li, C Uhrenfeldt, X Dai, S Munk-Nielsen 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 40 | 2017 |
| Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test S Song, S Munk-Nielsen, C Uhrenfeldt, I Trintis 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 756-760, 2017 | 39 | 2017 |
| Modeling of short-circuit-related thermal stress in aged IGBT modules AS Bahman, F Iannuzzo, C Uhrenfeldt, F Blaabjerg, S Munk-Nielsen IEEE Transactions on Industry Applications 53 (5), 4788-4795, 2017 | 34 | 2017 |
| Common mode current mitigation for medium voltage half bridge SiC modules N Christensen, AB Jørgensen, D Dalal, SD Sonderskov, S Bęczkowski, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 31 | 2017 |
| Design of low impedance busbar for 10 kV, 100A 4H-SiC MOSFET short-circuit tester using axial capacitors EP Eni, T Kerekes, C Uhrenfeldt, R Teodorescu, S Munk-Nielsen 2015 IEEE 6th International Symposium on Power Electronics for Distributed …, 2015 | 24 | 2015 |
| Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology S Song, S Munk-Nielsen, C Uhrenfeldt, K Pedersen 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2540-2545, 2017 | 23 | 2017 |
| Vce as early indicator of IGBT module failure mode KB Pedersen, PK Kristensen, K Pedersen, C Uhrenfeldt, S Munk-Nielsen 2017 IEEE International Reliability Physics Symposium (IRPS), FA-1.1-FA-1.6, 2017 | 23 | 2017 |
Stig Munk-NielsenAalborg University, Energy TechnologyVerified email at et.aau.dk
