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Sung Hyun Jo
Sung Hyun Jo
Crossbar Inc.
Verified email at umich.edu
Title
Cited by
Cited by
Year
Nanoscale memristor device as synapse in neuromorphic systems
SH Jo, T Chang, I Ebong, BB Bhadviya, P Mazumder, W Lu
Nano letters 10 (4), 1297-1301, 2010
37522010
Short-term memory to long-term memory transition in a nanoscale memristor
T Chang, SH Jo, W Lu
ACS nano 5 (9), 7669-7676, 2011
7812011
High-density crossbar arrays based on a Si memristive system
SH Jo, KH Kim, W Lu
Nano letters 9 (2), 870-874, 2009
7282009
CMOS compatible nanoscale nonvolatile resistance switching memory
SH Jo, W Lu
Nano letters 8 (2), 392-397, 2008
5372008
Programmable resistance switching in nanoscale two-terminal devices
SH Jo, KH Kim, W Lu
Nano letters 9 (1), 496-500, 2009
3922009
Synaptic behaviors and modeling of a metal oxide memristive device
T Chang, SH Jo, KH Kim, P Sheridan, S Gaba, W Lu
Applied physics A 102 (4), 857-863, 2011
3882011
Nanoscale resistive memory with intrinsic diode characteristics and long endurance
KH Kim, S Hyun Jo, S Gaba, W Lu
Applied Physics Letters 96 (5), 053106, 2010
2642010
Silicon-based nanoscale resistive device with adjustable resistance
W Lu, SH Jo, KH Kim
US Patent 8,687,402, 2014
2042014
3D-stackable crossbar resistive memory based on field assisted superlinear threshold (FAST) selector
SH Jo, T Kumar, S Narayanan, WD Lu, H Nazarian
2014 IEEE international electron devices meeting, 6.7. 1-6.7. 4, 2014
1852014
Silicon based nanoscale crossbar memory
W Lu, SH Jo, KH Kim
US Patent 8,071,972, 2011
1392011
Rectification element and method for resistive switching for non volatile memory device
W Lu, SH Jo
US Patent 8,351,241, 2013
1242013
Si memristive devices applied to memory and neuromorphic circuits
SH Jo, KH Kim, T Chang, S Gaba, W Lu
Proceedings of 2010 IEEE International Symposium on Circuits and Systems, 13-16, 2010
1242010
Nanoscale memristive devices for memory and logic applications
SH Jo
University of Michigan, 2010
1082010
Cross-point resistive RAM based on field-assisted superlinear threshold selector
SH Jo, T Kumar, S Narayanan, H Nazarian
IEEE Transactions on Electron Devices 62 (11), 3477-3481, 2015
1072015
Two terminal resistive switching device structure and method of fabricating
SH Jo, SB Herner
US Patent 9,012,307, 2015
992015
Intrinsic Programming Current Control for a RRAM
SH Jo, W Lu
US Patent App. 12/834,610, 2012
982012
Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
SH Jo, KH Kim, J Bettinger
US Patent 9,570,683, 2017
932017
Device switching using layered device structure
SH Jo, W Lu
US Patent 8,884,261, 2014
922014
Interface control for improved switching in RRAM
SH Jo, H Nazarian, W Lu
US Patent 8,441,835, 2013
912013
A Silicon-Based Crossbar Ultra-High-Density Non-Volatile Memory
SH Jo, W Lu
SSEL Annual Report, 1, 2007
792007
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