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Henri Vahlman
Henri Vahlman
Research associate, Fraunhofer ISE
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Year
Carbon‐Double‐Bond‐Free Printed Solar Cells from TiO2/CH3NH3PbI3/CuSCN/Au: Structural Control and Photoaging Effects
S Ito, S Tanaka, H Vahlman, H Nishino, K Manabe, P Lund
ChemPhysChem 15 (6), 1194-1200, 2014
1952014
In situ image processing method to investigate performance and stability of dye solar cells
MI Asghar, K Miettunen, S Mastroianni, J Halme, H Vahlman, P Lund
Solar Energy 86 (1), 331-338, 2012
562012
Recombination activity of light-activated copper defects in p-type silicon studied by injection-and temperature-dependent lifetime spectroscopy
A Inglese, J Lindroos, H Vahlman, H Savin
Journal of Applied Physics 120 (12), 2016
482016
Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experiments
H Vahlman, A Haarahiltunen, W Kwapil, J Schön, A Inglese, H Savin
Journal of Applied Physics 121 (19), 2017
272017
Low-temperature dark anneal as pre-treatment for LeTID in multicrystalline silicon
M Yli-Koski, M Serué, C Modanese, H Vahlman, H Savin
Solar Energy Materials and Solar Cells 192, 134-139, 2019
242019
Impact of copper on light-induced degradation in Czochralski silicon PERC solar cells
C Modanese, M Wagner, F Wolny, A Oehlke, HS Laine, A Inglese, ...
Solar Energy Materials and Solar Cells 186, 373-377, 2018
242018
Modeling of light-induced degradation due to Cu precipitation in p-type silicon. I. General theory of precipitation under carrier injection
H Vahlman, A Haarahiltunen, W Kwapil, J Schön, A Inglese, H Savin
Journal of Applied Physics 121 (19), 2017
202017
Light‐induced degradation in quasi‐monocrystalline silicon PERC solar cells: Indications on involvement of copper
H Vahlman, M Wagner, F Wolny, A Krause, H Laine, A Inglese, ...
physica status solidi (a) 214 (7), 1700321, 2017
152017
LeTID mitigation via an adapted firing process in p‐type PERC cells from SMART cast‐monocrystalline, Czochralski and high‐performance multicrystalline silicon
F Maischner, S Maus, J Greulich, S Lohmüller, E Lohmüller, P Saint‐Cast, ...
Progress in Photovoltaics: Research and Applications 30 (2), 123-131, 2022
142022
Comparison of plastic based counter electrodes for dye sensitized solar cells
G Hashmi, K Miettunen, J Halme, I Asghar, H Vahlman, T Saukkonen, ...
Journal of the Electrochemical Society 159 (7), H656, 2012
132012
Black silicon back‐contact module with wide light acceptance angle
P Ortega, M Garín, G von Gastrow, T Savisalo, A Tolvanen, H Vahlman, ...
Progress in Photovoltaics: Research and Applications 28 (3), 210-216, 2020
112020
Rapid thermal anneal activates light induced degradation due to copper redistribution
N Nampalli, HS Laine, J Colwell, V Vähänissi, A Inglese, C Modanese, ...
Applied Physics Letters 113 (3), 2018
112018
On the mass transport in apparently iodine-free ionic liquid polyaniline-coated carbon black composite electrolytes in dye-sensitized solar cells
H Vahlman, J Halme, J Korhonen, K Aitola, J Patakangas
The Journal of Physical Chemistry C 117 (23), 11920-11929, 2013
92013
High-intensity illumination treatments against LeTID–Intensity and temperature dependence of stability and inline feasibility
H Vahlman, S Roder, J Nekarda, S Rein
Solar Energy Materials and Solar Cells 223, 110978, 2021
52021
Capacitive Effects in High-Efficiency Solar Cells During IV-Curve Measurement: Considerations on Error of Correction and Extraction of Minority Carrier Lifetime
H Vahlman, J Lipping, J Hyvärinen, A Tolvanen, S Hyvärinen
Proceedings of the 35th EU PVSEC 2018, 254-261, 2018
52018
Industrial Applicability of Antireflection-Coating-Free Black Silicon on PERC Solar Cells and Modules
TP Pasanen, V Vähänissi, F Wolny, A Oehlke, M Wagner, MA Juntunen, ...
35th European Photovoltaic Solar Energy Conference and Exhibition, 552 - 556, 2018
42018
Characterization of light‐activated Cu defects in silicon: Comparison with the recombination activity of metallic precipitates
A Inglese, H Vahlman, W Kwapil, J Schön, H Savin
physica status solidi c 14 (7), 1700103, 2017
42017
Monitoring of Porous Silicon Layers Used for Epitaxial Wafer Production With Inline Reflectance Spectroscopy
HJ Vahlman, S Al-Hajjawi, J Haunschild, N Wöhrle, M Richter, L Jablonka, ...
IEEE Journal of Photovoltaics 12 (4), 989-998, 2022
32022
Effect of low-temperature annealing on defect causing copper-related light-induced degradation in p-type silicon
H Vahlman, A Haarahiltunen, W Kwapil, J Schön, M Yli-Koski, A Inglese, ...
Energy Procedia 124, 188-196, 2017
22017
Monitoring of porous silicon layers for epitaxial wafer production using inline reflectance spectroscopy
H Vahlman, S Al-Hajjawi, J Haunschild, N Wöhrle, M Richter, L Jablonka, ...
AIP Conference Proceedings 2826 (1), 2023
12023
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