Seuraa
John T. Leonard
John T. Leonard
Apple
Vahvistettu sähköpostiosoite verkkotunnuksessa umail.ucsb.edu - Kotisivu
Nimike
Viittaukset
Viittaukset
Vuosi
Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
JT Leonard, EC Young, BP Yonkee, DA Cohen, T Margalith, ...
Applied Physics Letters 107 (9), 091105, 2015
1622015
Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture
JT Leonard, DA Cohen, BP Yonkee, RM Farrell, T Margalith, S Lee, ...
Applied Physics Letters 107, 011102, 2015
1062015
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact
BP Yonkee, EC Young, C Lee, JT Leonard, SP DenBaars, JS Speck, ...
Optics express 24 (7), 7816-7822, 2016
852016
High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm
C Shen, TK Ng, JT Leonard, A Pourhashemi, HM Oubei, MS Alias, ...
ACS Photonics 3 (2), 262-268, 2016
852016
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
CO Holder, JT Leonard, RM Farrell, DA Cohen, B Yonkee, JS Speck, ...
Applied Physics Letters 105 (3), 2014
792014
Electrochemical C (sp3)–H fluorination
Y Takahira, M Chen, Y Kawamata, P Mykhailiuk, H Nakamura, BK Peters, ...
Synlett 30 (10), 1178-1182, 2019
752019
GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition
SG Lee, CA Forman, C Lee, J Kearns, EC Young, JT Leonard, DA Cohen, ...
Applied Physics Express 11 (6), 062703, 2018
702018
High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications
C Shen, TK Ng, JT Leonard, A Pourhashemi, S Nakamura, SP DenBaars, ...
Optics Letters 41 (11), 2608-2611, 2016
672016
Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact
CA Forman, SG Lee, EC Young, JA Kearns, DA Cohen, JT Leonard, ...
Applied Physics Letters 112 (11), 2018
642018
Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture
JT Leonard, BP Yonkee, DA Cohen, L Megalini, S Lee, JS Speck, ...
Applied Physics Letters 108, 031111, 2016
542016
Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts
SG Lee, CA Forman, J Kearns, JT Leonard, DA Cohen, S Nakamura, ...
Optics Express 27 (22), 31621-31628, 2019
432019
Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts
JT Leonard, DA Cohen, BP Yonkee, RM Farrell, SP DenBaars, JS Speck, ...
Journal of Applied Physics 118 (14), 145304, 2015
432015
Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser
SG Lee, S Mishkat-Ul-Masabih, JT Leonard, DF Feezell, DA Cohen, ...
Applied Physics Express 10 (1), 011001, 2016
312016
Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs
S Mishkat‐Ul‐Masabih, J Leonard, D Cohen, S Nakamura, D Feezell
physica status solidi (a) 214 (8), 1600819, 2017
302017
Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
C Shen, TK Ng, C Lee, JT Leonard, S Nakamura, JS Speck, SP Denbaars, ...
Gallium Nitride Materials and Devices XII 10104, 198-207, 2017
232017
Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers
CA Forman, SG Lee, EC Young, JA Kearns, DA Cohen, JT Leonard, ...
Gallium Nitride Materials and Devices XIII 10532, 94-104, 2018
172018
Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts
JT Leonard, EC Young, BP Yonkee, DA Cohen, C Shen, T Margalith, ...
Gallium Nitride Materials and Devices XI 9748, 125-137, 2016
152016
Demonstration of low resistance ohmic contacts to p-type (2021) GaN
BP Yonkee, RM Farrell, JT Leonard, SP DenBaars, JS Speck, ...
Semiconductor Science and Technology 30, 075007, 2015
152015
Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells
NA Estrich, DH Hook, AN Smith, JT Leonard, B Laughlin, JP Maria
Journal of Applied Physics 113 (23), 2013
142013
GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs
C Shen, JT Leonard, EC Young, TK Ng, SP DenBaars, JS Speck, ...
2016 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2016
132016
Järjestelmä ei voi suorittaa toimenpidettä nyt. Yritä myöhemmin uudelleen.
Artikkelit 1–20