| Metabolic resource allocation in individual microbes determines ecosystem interactions and spatial dynamics WR Harcombe, WJ Riehl, I Dukovski, BR Granger, A Betts, AH Lang, ... Cell reports 7 (4), 1104-1115, 2014 | 436 | 2014 |
| Langevin dynamics simulations of early stage shish-kebab crystallization of polymers in extensional flow I Dukovski, M Muthukumar The Journal of chemical physics 118 (14), 6648-6655, 2003 | 234 | 2003 |
| Method for making semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,830,964, 2004 | 117* | 2004 |
| Method for making semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,833,294, 2004 | 83 | 2004 |
| Semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,958,486, 2005 | 79 | 2005 |
| Method for making an electronic device including a poled superlattice having a net electrical dipole moment S Halilov, X Huang, I Dukovski, JACSF Yiptong, RJ Mears, M Hytha, ... US Patent 7,517,702, 2009 | 78 | 2009 |
| Multiple-wavelength opto-electronic device including a superlattice RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ... US Patent 8,389,974, 2013 | 77 | 2013 |
| Method for making a semiconductor device comprising a superlattice dielectric interface layer RJ Mears, M Hytha, SA Kreps, RJ Stephenson, JACSF Yiptong, ... US Patent 7,446,002, 2008 | 77 | 2008 |
| Semiconductor device including MOSFET having band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,897,472, 2005 | 77 | 2005 |
| Semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,891,188, 2005 | 77 | 2005 |
| Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 7,435,988, 2008 | 74 | 2008 |
| Spintronic devices with constrained spintronic dopant X Huang, S Halilov, JA Yiptong, I Dukovski, M Hytha, R Mears US Patent App. 11/687,422, 2008 | 74 | 2008 |
| Multiple-wavelength opto-electronic device including a superlattice RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ... US Patent 7,880,161, 2011 | 73 | 2011 |
| Method for making a multiple-wavelength opto-electronic device including a superlattice RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ... US Patent 7,863,066, 2011 | 72 | 2011 |
| Semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,952,018, 2005 | 72 | 2005 |
| Methods of making spintronic devices with constrained spintronic dopant X Huang, S Halilov, JACSF Yiptong, I Dukovski, M Hytha, RJ Mears US Patent 7,625,767, 2009 | 71 | 2009 |
| Semiconductor device including MOSFET having band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 7,303,948, 2007 | 70 | 2007 |
| Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 7,265,002, 2007 | 69 | 2007 |
| Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 7,034,329, 2006 | 69 | 2006 |
| Semiconductor device comprising a lattice matching layer I Dukovski, RJ Stephenson, JACSF Yiptong, S Halilov, RJ Mears, ... US Patent 7,718,996, 2010 | 68 | 2010 |
Robert StephensonAtomera, Inc.Verified email at ieee.org
