| Synthesis and magnetic studies of uniform iron nanorods and nanospheres SJ Park, S Kim, S Lee, ZG Khim, K Char, T Hyeon Journal of the American Chemical Society 122 (35), 8581-8582, 2000 | 780 | 2000 |
| Magnetic properties of n-GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ... Applied Physics Letters 80 (21), 3964-3966, 2002 | 451 | 2002 |
| Full integration and reliability evaluation of phase-change RAM based on 0.24/spl mu/m-CMOS technologies YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, JH Oh, HJ Kim, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 350 | 2003 |
| Highly manufacturable high density phase change memory of 64Mb and beyond SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 342 | 2004 |
| Highly reliable 50nm contact cell technology for 256Mb PRAM SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005 | 333 | 2005 |
| Novel cell structure of PRAM with thin metal layer inserted GeSbTe JH Yi, YH Ha, JH Park, BJ Kuh, H Horii, YT Kim, SO Park, YN Hwang, ... IEEE International Electron Devices Meeting 2003, 37.3. 1-37.3. 4, 2003 | 252 | 2003 |
| Switching current scaling and reliability evaluation in PRAM CW Jeong NVSMW 2004, 2004 | 221 | 2004 |
| Writing current reduction for high-density phase-change RAM YN Hwang, SH Lee, SJ Ahn, SY Lee, KC Ryoo, HS Hong, HC Koo, ... IEEE International Electron Devices Meeting 2003, 37.1. 1-37.1. 4, 2003 | 193* | 2003 |
| Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same YJ Song, YN Hwang, S Nam, SL Cho, GH Koh, CM Lee, BJ Kuh, Y Ha, ... US Patent 7,482,616, 2009 | 148 | 2009 |
| Tech. Dig.-Int. Electron Devices Meet. HY Lee, PS Chen, TY Wu, YS Chen, CC Wang, PJ Tzeng, CH Lin, F Chen, ... Tech. Dig. Int. Electron Devices Meet 31, 2000 | 147 | 2000 |
| Full integration and cell characteristics for 64Mb nonvolatile PRAM SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004 | 144 | 2004 |
| Development of a dual-luciferase reporter system for in vivo visualization of MicroRNA biogenesis and posttranscriptional regulation JY Lee, S Kim, JM Jeong, JK Chung, MC Lee, DS Lee Journal of nuclear medicine 49 (2), 285-294, 2008 | 126 | 2008 |
| Phase-change random access memory device and method of operating the same CW Jeong, SY Lee, WC Jeong, JH Park, SJ Ahn, F Yeung US Patent 7,440,308, 2008 | 109 | 2008 |
| Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline Film MS Choi, B Cheong, CH Ra, S Lee, JH Bae, S Lee, GD Lee, CW Yang, ... Advanced Materials 29 (42), 1703568, 2017 | 92 | 2017 |
| Enhanced electrocatalytic activity via phase transitions in strongly correlated SrRuO 3 thin films SA Lee, S Oh, JY Hwang, M Choi, C Youn, JW Kim, SH Chang, S Woo, ... Energy & Environmental Science 10 (4), 924-930, 2017 | 85 | 2017 |
| Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ... Japanese Journal of Applied Physics 44 (4S), 2691, 2005 | 72 | 2005 |
| Reconfigurable heterogeneous integration using stackable chips with embedded artificial intelligence C Choi, H Kim, JH Kang, MK Song, H Yeon, CS Chang, JM Suh, J Shin, ... Nature Electronics 5 (6), 386-393, 2022 | 65 | 2022 |
| Growth behavior and optical properties of metal-nanoparticle dispersed dielectric thin films formed by alternating sputtering SH Cho, S Lee, DY Ku, TS Lee, B Cheong, WM Kim, KS Lee Thin solid films 447, 68-73, 2004 | 63 | 2004 |
| Non‐volatile control of 2DEG conductivity at oxide interfaces SI Kim, DH Kim, Y Kim, SY Moon, MG Kang, JK Choi, HW Jang, SK Kim, ... Advanced materials 25 (33), 4612-4617, 2013 | 62 | 2013 |
| A study on the failure mechanism of a phase-change memory in write/erase cycling S Lee, J Jeong, TS Lee, WM Kim, B Cheong IEEE Electron Device Letters 30 (5), 448-450, 2009 | 62 | 2009 |
Kyung-Chang RyooSamsung ElectronicsVerified email at samsung.com
