Seuraa
Nicholas C. Miller
Nicholas C. Miller
Michigan State University
Vahvistettu sähköpostiosoite verkkotunnuksessa ieee.org
Nimike
Viittaukset
Viittaukset
Vuosi
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
1232019
RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band
AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
512020
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band
NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
382020
Toward high voltage radio frequency devices in β-Ga2O3
N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ...
Applied Physics Letters 117 (24), 2020
302020
Self-Heating Characterization of -Ga2O3 Thin-Channel MOSFETs by Pulsed and Raman Nanothermography
NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ...
IEEE Transactions on Electron Devices 67 (1), 204-211, 2019
292019
W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz
JS Moon, B Grabar, J Wong, C Dao, E Arkun, H Tai, D Fanning, NC Miller, ...
IEEE Microwave and Wireless Technology Letters 33 (2), 161-164, 2022
212022
A discontinuous Galerkin time domain framework for periodic structures subject to oblique excitation
NC Miller, AD Baczewski, JD Albrecht, B Shanker
IEEE transactions on antennas and propagation 62 (8), 4386-4391, 2014
162014
Accurate nonlinear GaN HEMT simulations from X-to Ka-band using a single ASM-HEMT model
NC Miller, NA Moser, RC Fitch, JK Gillespie, KJ Liddy, DE Walker, ...
2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON …, 2021
142021
Deep learning-based ASM-HEMT IV parameter extraction
F Chavez, DT Davis, NC Miller, S Khandelwal
IEEE Electron Device Letters 43 (10), 1633-1636, 2022
102022
Accurate non-linear harmonic simulations at X-band using the ASM-HEMT model validated with NVNA measurements
NC Miller, DT Davis, S Khandelwal, F Sischka, R Gilbert, M Elliott, ...
2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and …, 2022
102022
Rapid analysis of scattering from periodic dielectric structures using accelerated Cartesian expansions
AD Baczewski, NC Miller, B Shanker
JOSA A 29 (4), 531-540, 2012
102012
Computational study of Fermi kinetics transport applied to large-signal RF device simulations
NC Miller, M Grupen, K Beckwith, D Smithe, JD Albrecht
Journal of Computational Electronics, 1-18, 2018
72018
Experimentally validated gate-lag simulations of AlGaN/GaN HEMTs using Fermi kinetics transport
NC Miller, M Grupen, AE Islam, JD Albrecht, D Frey, R Young, M Lindquist, ...
IEEE Transactions on Electron Devices 70 (2), 435-442, 2022
62022
Delaunay–Voronoi surface integration: a full‐wave electromagnetics discretization for electronic device simulation
NC Miller, JD Albrecht, M Grupen
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016
62016
A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs
A Tunga, K Li, E White, NC Miller, M Grupen, JD Albrecht, S Rakheja
Journal of Applied Physics 132 (22), 2022
52022
Surmounting W-band scalar load-pull limitations using the ASM-HEMT model for millimeter-wave GaN HEMT technology large-signal assessment
NC Miller, M Elliott, R Gilbert, E Arkun, DJ Denninghoff
2022 99th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2022
52022
ASM-HEMT Embedding Model for Accelerated Design of PAs
M Lindquist, P Roblin, NC Miller
2021 XXXIVth General Assembly and Scientific Symposium of the International …, 2021
52021
Large-signal RF GaN HEMT simulation using Fermi kinetics transport
NC Miller, JD Albrecht, M Grupen
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
52016
Statistical modeling of manufacturing variability in GaN HEMT IV characteristics with ASM-HEMT
F Chavez, NC Miller, DT Davis, S Khandelwal
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 375-377, 2022
42022
Large-signal RF simulation and characterization of electronic devices using Fermi kinetics transport
NC Miller
Michigan State University, 2017
42017
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Artikkelit 1–20