Dan Beaton, Daniel Beaton, Daniel A Beaton, DA Beaton
Dan Beaton, Daniel Beaton, Daniel A Beaton, DA Beaton
University of British Columbia, National Renewable Energy Lab, St. Francis Xavier
Verified email at nrel.gov
Title
Cited by
Cited by
Year
Composition dependence of photoluminescence of alloys
X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang
Applied physics letters 95 (4), 041903, 2009
1922009
Effect of molecular beam epitaxy growth conditions on the Bi content of
X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick
Applied Physics Letters 92 (19), 192110, 2008
1772008
Clustering effects in Ga (AsBi)
S Imhof, A Thränhardt, A Chernikov, M Koch, NS Köster, K Kolata, ...
Applied Physics Letters 96 (13), 131115, 2010
1392010
Kinetically limited growth of GaAsBi by molecular-beam epitaxy
AJ Ptak, R France, DA Beaton, K Alberi, J Simon, A Mascarenhas, ...
Journal of Crystal Growth 338 (1), 107-110, 2012
1132012
GaAs1-xBix light emitting diodes
RB Lewis, DA Beaton, X Lu, T Tiedje
Journal of Crystal Growth 311 (7), 1872-1875, 2009
912009
Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes
N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ...
Applied Physics Letters 100 (5), 051105, 2012
642012
Temperature dependence of hole mobility in alloys
DA Beaton, RB Lewis, M Masnadi-Shirazi, T Tiedje
journal of applied physics 108 (8), 083708, 2010
552010
Surface reconstructions during growth of GaAs1− xBix alloys by molecular beam epitaxy
M Masnadi-Shirazi, DA Beaton, RB Lewis, X Lu, T Tiedje
Journal of crystal growth 338 (1), 80-84, 2012
542012
Deep level defects in n-type GaAsBi and GaAs grown at low temperatures
PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ...
Journal of Applied Physics 113 (13), 133708, 2013
402013
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
MK Shakfa, D Kalincev, X Lu, SR Johnson, DA Beaton, T Tiedje, ...
Journal of Applied Physics 114 (16), 164306, 2013
362013
Bismuth incorporation in GaAs1–xBix grown by molecular beam epitaxy with in‐situ light scattering
EC Young, MB Whitwick, T Tiedje, DA Beaton
physica status solidi c 4 (5), 1707-1710, 2007
362007
Luminescence dynamics in ga (asbi)
S Imhof, C Wagner, A Thränhardt, A Chernikov, M Koch, NS Köster, ...
Applied Physics Letters 98 (16), 161104, 2011
332011
Shubnikov-de Haas measurement of electron effective mass in GaAs1−xBix
B Fluegel, RN Kini, AJ Ptak, D Beaton, K Alberi, A Mascarenhas
Applied Physics Letters 99 (16), 162108, 2011
292011
Amber-green light-emitting diodes using order-disorder AlxIn1−xP heterostructures
TM Christian, DA Beaton, K Mukherjee, K Alberi, EA Fitzgerald, ...
Journal of Applied Physics 114 (7), 074505, 2013
282013
Amber-green light-emitting diodes using order-disorder AlxIn1−xP heterostructures
TM Christian, DA Beaton, K Mukherjee, K Alberi, EA Fitzgerald, ...
Journal of Applied Physics 114 (7), 074505, 2013
282013
Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates
K Mukherjee, DA Beaton, T Christian, EJ Jones, K Alberi, A Mascarenhas, ...
Journal of applied physics 113 (18), 183518, 2013
262013
Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant
AJ Ptak, DA Beaton, A Mascarenhas
Journal of crystal growth 351 (1), 122-125, 2012
262012
Insight into the epitaxial growth of high optical quality GaAs1–xBix
DA Beaton, A Mascarenhas, K Alberi
Journal of Applied Physics 118 (23), 235701, 2015
212015
Evidence of two disorder scales in Ga (AsBi)
S Imhof, C Wagner, A Chernikov, M Koch, K Kolata, NS Köster, ...
physica status solidi (b) 248 (4), 851-854, 2011
212011
Quaternary bismide alloy ByGa1− yAs1− xBix lattice matched to GaAs
DA Beaton, AJ Ptak, K Alberi, A Mascarenhas
Journal of crystal growth 351 (1), 37-40, 2012
172012
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