Seuraa
Umesh Mishra
Umesh Mishra
Vahvistettu sähköpostiosoite verkkotunnuksessa ece.ucsb.edu
Nimike
Viittaukset
Viittaukset
Vuosi
AlGaN/GaN HEMTs-an overview of device operation and applications
UK Mishra, P Parikh, YF Wu
Proceedings of the IEEE 90 (6), 1022-1031, 2002
26792002
GaN-based RF power devices and amplifiers
UK Mishra, L Shen, TE Kazior, YF Wu
Proceedings of the IEEE 96 (2), 287-305, 2008
21242008
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
R Vetury, NQ Zhang, S Keller, UK Mishra
IEEE Transactions on electron devices 48 (3), 560-566, 2001
18222001
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
14652000
30-W/mm GaN HEMTs by field plate optimization
YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ...
IEEE Electron Device Letters 25 (3), 117-119, 2004
14322004
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
14282018
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ...
Applied physics letters 71 (18), 2572-2574, 1997
9761997
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ...
Applied Physics Letters 73 (10), 1370-1372, 1998
8881998
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
8562006
Very-high power density AlGaN/GaN HEMTs
YF Wu, D Kapolnek, JP Ibbetson, P Parikh, BP Keller, UK Mishra
IEEE Transactions on Electron Devices 48 (3), 586-590, 2001
8022001
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
6241999
AlGaN/AlN/GaN high-power microwave HEMT
L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ...
IEEE Electron Device Letters 22 (10), 457-459, 2001
6192001
High-power AlGaN/GaN HEMTs for ka-band applications
T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
6182005
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ...
Applied Physics Letters 73 (14), 2006-2008, 1998
5871998
High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates
Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra
IEEE Electron Device Letters 27 (9), 713-715, 2006
5672006
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
S Karmalkar, UK Mishra
IEEE transactions on electron devices 48 (8), 1515-1521, 2002
5612002
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 2008
5412008
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
5082013
Semiconductor device physics and design
UK Mishra, J Singh
Springer, 2008
5082008
Heavy doping effects in Mg-doped GaN
P Kozodoy, H Xing, SP DenBaars, UK Mishra, A Saxler, R Perrin, ...
Journal of Applied Physics 87 (4), 1832-1835, 2000
5012000
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Artikkelit 1–20