Seuraa
Guangyuan Lu
Guangyuan Lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and
Vahvistettu sähköpostiosoite verkkotunnuksessa mail.sim.ac.cn
Nimike
Viittaukset
Viittaukset
Vuosi
Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys
T Wu, X Zhang, Q Yuan, J Xue, G Lu, Z Liu, H Wang, H Wang, F Ding, ...
Nature materials 15 (1), 43-47, 2016
6262016
Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy
G Lu, T Wu, Q Yuan, H Wang, H Wang, F Ding, X Xie, M Jiang
Nature communications 6 (1), 6160, 2015
4602015
Intrinsic toughening and stable crack propagation in hexagonal boron nitride
Y Yang, Z Song, G Lu, Q Zhang, B Zhang, B Ni, C Wang, X Li, L Gu, X Xie, ...
Nature 594 (7861), 57-61, 2021
1122021
Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
Z Shi, X Wang, Q Li, P Yang, G Lu, R Jiang, H Wang, C Zhang, C Cong, ...
Nature communications 11 (1), 849, 2020
932020
Synthesis of high‐quality graphene and hexagonal boron nitride monolayer In‐plane heterostructure on Cu–Ni alloy
G Lu, T Wu, P Yang, Y Yang, Z Jin, W Chen, S Jia, H Wang, G Zhang, ...
Advanced Science 4 (9), 1700076, 2017
832017
Dielectric breakdown in chemical vapor deposited hexagonal boron nitride
L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ...
ACS applied materials & interfaces 9 (45), 39758-39770, 2017
522017
Copper-Vapor-Assisted Rapid Synthesis of Large AB-Stacked Bilayer Graphene Domains on Cu-Ni Alloy.
C Yang, T Wu, H Wang, G Zhang, J Sun, G Lu, T Niu, A Li, X Xie, M Jiang
Small (Weinheim an der Bergstrasse, Germany) 12 (15), 2009-2013, 2016
472016
Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride
X Ren, J Dong, P Yang, J Li, G Lu, T Wu, H Wang, W Guo, Z Zhang, ...
Physical Review Materials 3 (1), 014004, 2019
292019
High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments
L Jiang, N Xiao, B Wang, E Grustan-Gutierrez, X Jing, P Babor, M Kolíbal, ...
Nano Research 10, 2046-2055, 2017
252017
Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe 2 B alloy
Z Shi, G Lu, P Yang, T Wu, W Yin, C Zhang, R Jiang, X Xie
RSC advances 9 (18), 10155-10158, 2019
182019
Synthesis and stacking sequence characterization of h-BN/graphene heterostructures on Cu–Ni alloy
G Lu, G Zhang, J Sun, X Wang, Z Shi, D Jiang, H Wang, A Li, T Wu, Q Yu, ...
Carbon 152, 521-526, 2019
162019
CVD growth of high-quality and large-area continuous h-BN thin films directly on stainless-steel as protective coatings
S Jia, W Chen, J Zhang, CY Lin, H Guo, G Lu, K Li, T Zhai, Q Ai, J Lou
Materials Today Nano 16, 100135, 2021
132021
Synthesis of continuous hexagonal boron nitride films on alloy substrate
G Lu, T Wu, H Wang, P Yang, Z Shi, C Yang, X Xie
Materials Letters 196, 252-255, 2017
42017
Local carbon-supply device and method for preparing wafer-level graphene single crystal by local carbon supply
WU Tianru, X Zhang, LU Guangyuan, C Yang, H Wang, X Xie, M Jiang
US Patent 10,253,428, 2019
12019
Growth method of graphene
H Wang, S Tang, LU Guangyuan, WU Tianru, D Jiang, G Ding, X Zhang, ...
US Patent 10,017,878, 2018
12018
Synthesis of multilayer hexagonal boron nitride on Cu-Ni alloy by chemical vapor deposition
Y Peng, WU TianRu, W HaoMin, LU GuangYuan, D LianWen, SX HUANG
Chinese Science Bulletin 62 (20), 2279-2286, 2017
12017
Method for preparing multi-layer hexagonal boron nitride film
SHI Zhiyuan, WU Tianru, LU Guangyuan, X Wang, C Zhang, H Wang, ...
US Patent 11,679,978, 2023
2023
12-inch 90-nm BCD Process Optimization: Reducing Wafer Edge LDMOS Leakage
H Chen, L Wang, L Xiao, Y Chen, T Chen, G Lu, J Wang, F Ji
2022 China Semiconductor Technology International Conference (CSTIC), 1-3, 2022
2022
Potential Applications of h-BN Crystals in Future ULSI
G Lu, Y Chen, H Chen
2020 China Semiconductor Technology International Conference (CSTIC), 1-3, 2020
2020
Järjestelmä ei voi suorittaa toimenpidettä nyt. Yritä myöhemmin uudelleen.
Artikkelit 1–19