Seuraa
Sami Suihkonen
Sami Suihkonen
Senior Scientist / VTT
Vahvistettu sähköpostiosoite verkkotunnuksessa vtt.fi
Nimike
Viittaukset
Viittaukset
Vuosi
A single-pixel wireless contact lens display
AR Lingley, M Ali, Y Liao, R Mirjalili, M Klonner, M Sopanen, S Suihkonen, ...
Journal of Micromechanics and Microengineering 21 (12), 125014, 2011
2072011
P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si
N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters 40 (7), 1036-1039, 2019
1072019
Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation
E Repo, S Rengaraj, S Pulkka, E Castangnoli, S Suihkonen, M Sopanen, ...
Separation and Purification Technology 120, 206-214, 2013
902013
Identification of the -O defect complex in AlN single crystals
JM Mäki, I Makkonen, F Tuomisto, A Karjalainen, S Suihkonen, ...
Physical Review B 84 (8), 081204, 2011
852011
Low energy electron beam induced vacancy activation in GaN
H Nykänen, S Suihkonen, L Kilanski, M Sopanen, F Tuomisto
Applied Physics Letters 100 (12), 2012
652012
Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals
S Pimputkar, S Suihkonen, M Imade, Y Mori, JS Speck, S Nakamura
Journal of crystal growth 432, 49-53, 2015
582015
Atomic layer etching of gallium nitride (0001)
C Kauppinen, SA Khan, J Sundqvist, DB Suyatin, S Suihkonen, ...
Journal of Vacuum Science & Technology A 35 (6), 2017
532017
Defects in single crystalline ammonothermal gallium nitride
S Suihkonen, S Pimputkar, S Sintonen, F Tuomisto
Advanced Electronic Materials 3 (6), 1600496, 2017
532017
AlN metal–semiconductor field-effect transistors using Si-ion implantation
H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ...
Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018
522018
Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ...
Journal of crystal growth 300 (2), 324-329, 2007
482007
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ...
Journal of Crystal Growth 310 (23), 5162-5165, 2008
452008
Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes
P Kivisaari, L Riuttanen, J Oksanen, S Suihkonen, M Ali, H Lipsanen, ...
Applied Physics Letters 101 (2), 2012
442012
Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN
S Sintonen, M Rudziński, S Suihkonen, H Jussila, M Knetzger, E Meissner, ...
Journal of Applied Physics 116 (8), 2014
432014
Growth of InN by vertical flow MOVPE
S Suihkonen, J Sormunen, VT Rangel-Kuoppa, H Koskenvaara, ...
Journal of crystal growth 291 (1), 8-11, 2006
412006
Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field
VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ...
Journal of applied physics 106 (12), 2009
392009
Infrared absorption of hydrogen-related defects in ammonothermal GaN
S Suihkonen, S Pimputkar, JS Speck, S Nakamura
Applied Physics Letters 108 (20), 2016
362016
Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation
GA Melentev, VA Shalygin, LE Vorobjev, VY Panevin, DA Firsov, ...
Journal of Applied Physics 119 (9), 2016
362016
Effect of growth conditions on electrical properties of Mg-doped p-GaN
O Svensk, S Suihkonen, T Lang, H Lipsanen, M Sopanen, ...
Journal of crystal growth 298, 811-814, 2007
362007
Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios
IEEE Electron Device Letters 40 (8), 1245-1248, 2019
352019
MOVPE growth of nitrogen-and aluminum-polar AlN on 4H-SiC
J Lemettinen, H Okumura, I Kim, M Rudzinski, J Grzonka, T Palacios, ...
Journal of Crystal Growth 487, 50-56, 2018
352018
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