A single-pixel wireless contact lens display AR Lingley, M Ali, Y Liao, R Mirjalili, M Klonner, M Sopanen, S Suihkonen, ...
Journal of Micromechanics and Microengineering 21 (12), 125014, 2011
207 2011 P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters 40 (7), 1036-1039, 2019
107 2019 Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation E Repo, S Rengaraj, S Pulkka, E Castangnoli, S Suihkonen, M Sopanen, ...
Separation and Purification Technology 120, 206-214, 2013
90 2013 Identification of the -O defect complex in AlN single crystals JM Mäki, I Makkonen, F Tuomisto, A Karjalainen, S Suihkonen, ...
Physical Review B 84 (8), 081204, 2011
85 2011 Low energy electron beam induced vacancy activation in GaN H Nykänen, S Suihkonen, L Kilanski, M Sopanen, F Tuomisto
Applied Physics Letters 100 (12), 2012
65 2012 Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals S Pimputkar, S Suihkonen, M Imade, Y Mori, JS Speck, S Nakamura
Journal of crystal growth 432, 49-53, 2015
58 2015 Atomic layer etching of gallium nitride (0001) C Kauppinen, SA Khan, J Sundqvist, DB Suyatin, S Suihkonen, ...
Journal of Vacuum Science & Technology A 35 (6), 2017
53 2017 Defects in single crystalline ammonothermal gallium nitride S Suihkonen, S Pimputkar, S Sintonen, F Tuomisto
Advanced Electronic Materials 3 (6), 1600496, 2017
53 2017 AlN metal–semiconductor field-effect transistors using Si-ion implantation H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ...
Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018
52 2018 Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ...
Journal of crystal growth 300 (2), 324-329, 2007
48 2007 Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ...
Journal of Crystal Growth 310 (23), 5162-5165, 2008
45 2008 Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes P Kivisaari, L Riuttanen, J Oksanen, S Suihkonen, M Ali, H Lipsanen, ...
Applied Physics Letters 101 (2), 2012
44 2012 Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN S Sintonen, M Rudziński, S Suihkonen, H Jussila, M Knetzger, E Meissner, ...
Journal of Applied Physics 116 (8), 2014
43 2014 Growth of InN by vertical flow MOVPE S Suihkonen, J Sormunen, VT Rangel-Kuoppa, H Koskenvaara, ...
Journal of crystal growth 291 (1), 8-11, 2006
41 2006 Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ...
Journal of applied physics 106 (12), 2009
39 2009 Infrared absorption of hydrogen-related defects in ammonothermal GaN S Suihkonen, S Pimputkar, JS Speck, S Nakamura
Applied Physics Letters 108 (20), 2016
36 2016 Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation GA Melentev, VA Shalygin, LE Vorobjev, VY Panevin, DA Firsov, ...
Journal of Applied Physics 119 (9), 2016
36 2016 Effect of growth conditions on electrical properties of Mg-doped p-GaN O Svensk, S Suihkonen, T Lang, H Lipsanen, M Sopanen, ...
Journal of crystal growth 298, 811-814, 2007
36 2007 Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8 Ga0.2 N/AlN on SiC With Drain Current Over 100 mA/mm J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios
IEEE Electron Device Letters 40 (8), 1245-1248, 2019
35 2019 MOVPE growth of nitrogen-and aluminum-polar AlN on 4H-SiC J Lemettinen, H Okumura, I Kim, M Rudzinski, J Grzonka, T Palacios, ...
Journal of Crystal Growth 487, 50-56, 2018
35 2018