Electrical characterization of GaN junctions with and without threading dislocations P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ... Applied physics letters 73 (7), 975-977, 1998 | 485 | 1998 |
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN G Parish, S Keller, P Kozodoy, JP Ibbetson, H Marchand, PT Fini, ... Applied Physics Letters 75 (2), 247-249, 1999 | 428 | 1999 |
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition H Marchand, XH Wu, JP Ibbetson, PT Fini, P Kozodoy, S Keller, JS Speck, ... Applied physics letters 73 (6), 747-749, 1998 | 319 | 1998 |
Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors H Marchand, L Zhao, N Zhang, B Moran, R Coffie, UK Mishra, JS Speck, ... journal of Applied Physics 89 (12), 7846-7851, 2001 | 249 | 2001 |
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth SF Chichibu, H Marchand, MS Minsky, S Keller, PT Fini, JP Ibbetson, ... Applied physics letters 74 (10), 1460-1462, 1999 | 232 | 1999 |
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition H Marchand, JP Ibbetson, PT Fini, S Keller, SP DenBaars, JS Speck, ... Journal of Crystal Growth 195 (1-4), 328-332, 1998 | 160 | 1998 |
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD H Marchand, JP Ibbetson, PT Fini, P Kozodoy, S Keller, S DenBaars, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1998 | 158* | 1998 |
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers P Fini, L Zhao, B Moran, M Hansen, H Marchand, JP Ibbetson, ... Applied Physics Letters 75 (12), 1706-1708, 1999 | 134 | 1999 |
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride SJ Rosner, G Girolami, H Marchand, PT Fini, JP Ibbetson, L Zhao, ... Applied physics letters 74 (14), 2035-2037, 1999 | 123 | 1999 |
Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP (001) H Marchand, P Desjardins, S Guillon, JE Paultre, Z Bougrioua, RYF Yip, ... Applied physics letters 71 (4), 527-529, 1997 | 116 | 1997 |
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction P Fini, H Marchand, JP Ibbetson, SP DenBaars, UK Mishra, JS Speck Journal of crystal growth 209 (4), 581-590, 2000 | 113 | 2000 |
Method of controlling stress in gallium nitride films deposited on substrates H Marchand, BJ Moran US Patent 7,687,888, 2010 | 92 | 2010 |
Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer H Marchand, N Zhang, L Zhao, Y Golan, SJ Rosner, G Girolami, PT Fini, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1999 | 85 | 1999 |
Thermal conductivity of lateral epitaxial overgrown GaN films CY Luo, H Marchand, DR Clarke, SP DenBaars Applied Physics Letters 75 (26), 4151-4153, 1999 | 74 | 1999 |
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures AR Stonas, P Kozodoy, H Marchand, P Fini, SP DenBaars, UK Mishra, ... Applied Physics Letters 77 (16), 2610-2612, 2000 | 61 | 2000 |
Method of controlling stress in group-III nitride films deposited on substrates H Marchand, BJ Moran, UK Mishra, JS Speck US Patent 9,129,977, 2015 | 34* | 2015 |
Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods A Lochtefeld, H Marchand US Patent 9,012,253, 2015 | 32 | 2015 |
Method of controlling stress in gallium nitride films deposited on substrates H Marchand, BJ Moran US Patent 7,816,764, 2010 | 30 | 2010 |
10 Gb/s Mach-Zehnder modulator integrated with widely-tunable sampled grating DBR Laser YA Akulova, GA Fish, P Koh, P Kozodoy, M Larson, C Schow, E Hall, ... Optical Fiber Communication Conference, 2004. OFC 2004 1, 395, 2004 | 29 | 2004 |
A monolithic chemical sensor using tandem heterodyned sampled grating DBR lasers DA Cohen, E Skogen, J Nolde, D Tung, LA Coldren LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society …, 2001 | 29 | 2001 |