Bridging TCAD and AI: its application to semiconductor design C Jeong, S Myung, I Huh, B Choi, J Kim, H Jang, H Lee, D Park, K Lee, ... IEEE Transactions on Electron Devices 68 (11), 5364-5371, 2021 | 33 | 2021 |
A novel approach for semiconductor etching process with inductive biases S Myung, H Jang, B Choi, J Ryu, H Kim, SW Park, C Jeong, DS Kim arXiv preprint arXiv:2104.02468, 2021 | 4 | 2021 |
Improvement of drain leakage current characteristics in metal-oxide-semiconductor-field-effect-transistor by asymmetric source-drain structure B Choi, H Park, D Kim, B Choi 2012 IEEE International Meeting for Future of Electron Devices, Kansai, 1-2, 2012 | 3 | 2012 |
Comprehensive studies on deep learning applicable to TCAD S Myung, B Choi, W Jang, J Kim, I Huh, JM Choe, YG Kim, DS Kim Japanese Journal of Applied Physics 62 (SC), SC0808, 2023 | 2 | 2023 |
Drain leakage and hot carrier reliability characteristics of asymmetric source-drain MOSFET K Kim, B Choi, D Baek, H Kim, B Choi Journal of the Korean Physical Society 63, 1023-1027, 2013 | 1 | 2013 |
A study on off-state leakage current characteristics of asymmetric-metal—oxide—semiconductor field-effect transistors S Kwon, B Choi, HS Kuh, H Park, B Choi 18th IEEE International Symposium on the Physical and Failure Analysis of …, 2011 | 1 | 2011 |
Deep Learning for Semiconductor Materials and Devices Design C Jeong, S Myung, B Choi, J Kim, W Jang, I Huh, JM Choe, YG Kim, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
Hybrid Modeling of TCAD and AI for Semiconductor Design C Jeong, S Myung, J Kim, H Jang, B Choi, H Moon, J Ryu, JM Choe, ... IWCN 2021, 2021 | | 2021 |
Electrical Characteristics of Asymmetric Source-Drain MOSFET Compared with Symmetric Source-Drain MOSFET B Choi | | |