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Byungseon Choi
Byungseon Choi
Other namesByoungseon Choi
Samsung Electronics Staff Engineer
No verified email
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Cited by
Cited by
Year
Bridging TCAD and AI: its application to semiconductor design
C Jeong, S Myung, I Huh, B Choi, J Kim, H Jang, H Lee, D Park, K Lee, ...
IEEE Transactions on Electron Devices 68 (11), 5364-5371, 2021
332021
A novel approach for semiconductor etching process with inductive biases
S Myung, H Jang, B Choi, J Ryu, H Kim, SW Park, C Jeong, DS Kim
arXiv preprint arXiv:2104.02468, 2021
42021
Improvement of drain leakage current characteristics in metal-oxide-semiconductor-field-effect-transistor by asymmetric source-drain structure
B Choi, H Park, D Kim, B Choi
2012 IEEE International Meeting for Future of Electron Devices, Kansai, 1-2, 2012
32012
Comprehensive studies on deep learning applicable to TCAD
S Myung, B Choi, W Jang, J Kim, I Huh, JM Choe, YG Kim, DS Kim
Japanese Journal of Applied Physics 62 (SC), SC0808, 2023
22023
Drain leakage and hot carrier reliability characteristics of asymmetric source-drain MOSFET
K Kim, B Choi, D Baek, H Kim, B Choi
Journal of the Korean Physical Society 63, 1023-1027, 2013
12013
A study on off-state leakage current characteristics of asymmetric-metal—oxide—semiconductor field-effect transistors
S Kwon, B Choi, HS Kuh, H Park, B Choi
18th IEEE International Symposium on the Physical and Failure Analysis of …, 2011
12011
Deep Learning for Semiconductor Materials and Devices Design
C Jeong, S Myung, B Choi, J Kim, W Jang, I Huh, JM Choe, YG Kim, ...
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
2023
Hybrid Modeling of TCAD and AI for Semiconductor Design
C Jeong, S Myung, J Kim, H Jang, B Choi, H Moon, J Ryu, JM Choe, ...
IWCN 2021, 2021
2021
Electrical Characteristics of Asymmetric Source-Drain MOSFET Compared with Symmetric Source-Drain MOSFET
B Choi
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Articles 1–9