| Steep-slope hysteresis-free negative capacitance MoS2 transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018 | 501 | 2018 |
| Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor M Si, C Jiang, W Chung, Y Du, MA Alam, PD Ye Nano Letters 18 (6), 3682-3687, 2018 | 119 | 2018 |
| MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit X Liu, R Liang, G Gao, C Pan, C Jiang, Q Xu, J Luo, X Zou, Z Yang, L Liao, ... Advanced Materials 30 (28), 1800932, 2018 | 103 | 2018 |
| Thin, transferred layers of silicon dioxide and silicon nitride as water and ion barriers for implantable flexible electronic systems E Song, H Fang, X Jin, J Zhao, C Jiang, KJ Yu, Y Zhong, D Xu, J Li, ... Advanced Electronic Materials 3 (8), 1700077, 2017 | 71 | 2017 |
| Atomic Threshold-Switching Enabled MoS2 Transistors towards Ultralow-Power Electronics Qilin Hua*, Guoyun Gao*, Chunsheng Jiang*(Contributed equally), Jinran Yu ... Nature Communications 11, 6207, 2020 | 64 | 2020 |
| Sub-60 mV/dec Ferroelectric HZO MoS2 Negative Capacitance Field-effect Transistor with Internal Metal Gate: the Role of Parasitic Capacitance M Si, C Jiang, CJ Su, YT Tang, L Yang, W Chung, MA Alam, PD Ye 2017 IEEE International Electron Devices Meeting (IEDM), 2017 | 62 | 2017 |
| Investigation of negative capacitance gate-all-around tunnel FETs combining numerical simulation and analytical modeling C Jiang, R Liang, J Xu IEEE Transactions on Nanotechnology 16 (1), 58-67, 2016 | 59 | 2016 |
| A two-dimensional analytical model for short channel junctionless double-gate MOSFETs C Jiang, R Liang, J Wang, J Xu AIP Advances 5 (5), 2015 | 58 | 2015 |
| A Closed Form Analytical Model of Back-Gated 2D Semiconductor Negative Capacitance Field Effect Transistors Chunsheng Jiang, Mengwei Si, Renrong Liang, Jun Xu, Peide Ye, and Muhammad ... IEEE Journal of the Electron Devices Society, 2017 | 40 | 2017 |
| Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits W. Ahn , S.H. Shin, C. Jiang, H. Jiang, M.A. Wahab, M.A. Alam Microelectronics Reliability 81, 262–273, 2018 | 38 | 2018 |
| A new framework of physics-based compact model predicts reliability of self-heated modern ICs: FinFET, NWFET, NSHFET comparison W Ahn, C Jiang, J Xu, MA Alam 2017 IEEE International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2017 | 36 | 2017 |
| Simulation-based study of negative capacitance double-gate junctionless transistors with ferroelectric gate dielectric C Jiang, R Liang, J Wang, J Xu Solid-State Electronics 126, 130-135, 2016 | 33 | 2016 |
| Proton conductor gated synaptic transistor based on transparent IGZO for realizing electrical and UV light stimulus W Cheng, R Liang, H Tian, C Sun, C Jiang, X Wang, J Wang, TL Ren, ... IEEE Journal of the Electron Devices Society 7, 38-45, 2018 | 28 | 2018 |
| Analytical drain current model for long-channel gate-all-around negative capacitance transistors with a metal–ferroelectric–insulator–semiconductor structure C Jiang, R Liang, J Wang, J Xu Japanese Journal of Applied Physics 55 (2), 024201, 2016 | 28 | 2016 |
| A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification C Jiang, R Liang, J Wang, J Xu Journal of Physics D: Applied Physics 48 (36), 365103, 2015 | 27 | 2015 |
| Negative Capacitance Oxide Thin Film Transistor with sub-60 mV/decade Subthreshold Swing Yuxing Li, Renrong Liang, Jiabin Wang, Chunsheng Jiang, Benkuan Xiong ... IEEE Electron Device Letters, 2019 | 26 | 2019 |
| Stability of MOSFET-Based Electronic Components in Wearable and Implantable Systems Xin Jin, Chunsheng Jiang , Enming Song, Hui Fang, John A. Rogers, Muhammad ... IEEE Transactions on Electron Devices, 2017 | 22* | 2017 |
| Highly sensitive graphene-based ammonia sensor enhanced by electrophoretic deposition of MXene Q Li, M Xu, C Jiang, S Song, T Li, M Sun, W Chen, H Peng Carbon 202, 561-570, 2023 | 15 | 2023 |
| Phosphorus doping of graphene for conductometric room temperature ammonia sensing Q Li, M Sun, C Jiang, S Song, T Li, M Xu, W Chen, H Peng Sensors and Actuators B: Chemical 379, 133234, 2023 | 12 | 2023 |
| A compact quasi-static terminal charge and drain current model for double-gate junctionless transistors and its circuit validation C Jiang, R Liang, J Xu, MA Alam IEEE Transactions on Electron Devices 64 (12), 4823-4830, 2017 | 12 | 2017 |
Renrong LiangTsinghua UniverisityVahvistettu sähköpostiosoite verkkotunnuksessa tsinghua.edu.cn
